TN248.4 2002020956MBE 生长 GaAlAs/GaAs 量子阱激光器材料的光谱和结构特性分析=Spectral and structure characteristicsof GaAlAs/GaAs quantum well laser materialsgrown by MBE[刊,中]/李梅,宋晓伟,王晓华,张宝顺。
TN248.4 2002053402用于全光波长转换的外腔半导体激光器的注入电流选择=Selection of injection current of the external cavitylaser diodes for all-optical wavelength conversion[刊,中]/马军山,耿健新,瞿荣辉,陈高庭,方祖捷(中...TN248.4 2002053402用于全光波长转换的外腔半导体激光器的注入电流选择=Selection of injection current of the external cavitylaser diodes for all-optical wavelength conversion[刊,中]/马军山,耿健新,瞿荣辉,陈高庭,方祖捷(中科院上海光机所.上海(201800))//光学学报.—2001,21(8).展开更多
文摘TN248.4 2002020956MBE 生长 GaAlAs/GaAs 量子阱激光器材料的光谱和结构特性分析=Spectral and structure characteristicsof GaAlAs/GaAs quantum well laser materialsgrown by MBE[刊,中]/李梅,宋晓伟,王晓华,张宝顺。
文摘TN248.4 2002053402用于全光波长转换的外腔半导体激光器的注入电流选择=Selection of injection current of the external cavitylaser diodes for all-optical wavelength conversion[刊,中]/马军山,耿健新,瞿荣辉,陈高庭,方祖捷(中科院上海光机所.上海(201800))//光学学报.—2001,21(8).
