A new type of 785 nm semiconductor laser device has been proposed.The thin cladding and mode expansion layer structure incorporated into the epitaxy on the p-side significantly impacts the regulation of grating etchin...A new type of 785 nm semiconductor laser device has been proposed.The thin cladding and mode expansion layer structure incorporated into the epitaxy on the p-side significantly impacts the regulation of grating etching depth.Thinning of the p-side waveguide layer makes the light field bias to the n-side cladding layer.By coordinating the confinement effect of the cladding layer,the light confinement factor on the p-side is regulated.On the other hand,the introduction of a mode expansion layer facilitates the expansion of the mode profile on the p side cladding layer.Both these factors contribute positively to reducing the grating etching depth.Compared to the reported epitaxial structures of symmetric waveguides,the new structure significantly reduces the etching depth of the grating while ensuring adequate reflection intensity and maintaining resonance.Moreover,to improve the output performance of the device,the new epitaxial structure has been optimized.Based on the traditional epitaxial structure,an energy release layer and an electron blocking layer are added to improve the electronic recombination efficiency.This improved structure has an output performance comparable to that of a symmetric waveguide,despite being able to have a smaller gain area.展开更多
用X射线光电子能谱(XPS)对热处理煤矸石中Si 2p,A l 2p和O 1s的结合能进行试验研究,发现煤矸石质硅铝基胶凝材料的强度和煤矸石中硅、铝的结合能具有线性关系,煤矸石的硅、铝结合能可以用来表征煤矸石的胶凝特性和活性.热活化煤矸石Si 2...用X射线光电子能谱(XPS)对热处理煤矸石中Si 2p,A l 2p和O 1s的结合能进行试验研究,发现煤矸石质硅铝基胶凝材料的强度和煤矸石中硅、铝的结合能具有线性关系,煤矸石的硅、铝结合能可以用来表征煤矸石的胶凝特性和活性.热活化煤矸石Si 2p,A l 2p和O 1s的结合能之间具有很好的相关性.基于此提出硅铝质物料活性评价的新方法———用Si,A l表面结合能评价硅铝质物料活性.展开更多
文摘A new type of 785 nm semiconductor laser device has been proposed.The thin cladding and mode expansion layer structure incorporated into the epitaxy on the p-side significantly impacts the regulation of grating etching depth.Thinning of the p-side waveguide layer makes the light field bias to the n-side cladding layer.By coordinating the confinement effect of the cladding layer,the light confinement factor on the p-side is regulated.On the other hand,the introduction of a mode expansion layer facilitates the expansion of the mode profile on the p side cladding layer.Both these factors contribute positively to reducing the grating etching depth.Compared to the reported epitaxial structures of symmetric waveguides,the new structure significantly reduces the etching depth of the grating while ensuring adequate reflection intensity and maintaining resonance.Moreover,to improve the output performance of the device,the new epitaxial structure has been optimized.Based on the traditional epitaxial structure,an energy release layer and an electron blocking layer are added to improve the electronic recombination efficiency.This improved structure has an output performance comparable to that of a symmetric waveguide,despite being able to have a smaller gain area.
文摘用X射线光电子能谱(XPS)对热处理煤矸石中Si 2p,A l 2p和O 1s的结合能进行试验研究,发现煤矸石质硅铝基胶凝材料的强度和煤矸石中硅、铝的结合能具有线性关系,煤矸石的硅、铝结合能可以用来表征煤矸石的胶凝特性和活性.热活化煤矸石Si 2p,A l 2p和O 1s的结合能之间具有很好的相关性.基于此提出硅铝质物料活性评价的新方法———用Si,A l表面结合能评价硅铝质物料活性.
