A stable red organic light-emitting device has been realized by doping a red dye tetra-methyljuloidine (DCJT)in electron transporting layer(ETL). The structure of the device was ITO/ CuPc/ NPB/ Alq: DCJT/ MgAg, where ...A stable red organic light-emitting device has been realized by doping a red dye tetra-methyljuloidine (DCJT)in electron transporting layer(ETL). The structure of the device was ITO/ CuPc/ NPB/ Alq: DCJT/ MgAg, where copper phthalocyanine(CuPc) was used as a buffer layer, N, N ’-his-(1-napthyl)-N, N’- diphenyl-1, 1’ -biphenyl-4, 4’ -diamine(NPB) as the hole transporting layer, tris(8-quinolinolato) aluminum complex(Alq) as ETL, in which DCJT was doped, indium tin oxide(ITO) and MgAg were as the anode and cathode, respectively. The red emission with peak at 620nm and CIE coordinates x = 0. 63, y = 0. 37, maximum luminance 4 687cd/m2, maximum luminous efficency 0. 83lm/W were obtained. The device showed a high stability under 12mA/cm2 current density continuous operation, the half decay time reached 2 500 hours at the initial luminance 150cd/m2 and the change of driving voltage was 0. 6mV/hour in the degradation process. If 50cd/m2 is taken as the initial luminance of red device, the half decay time is considered to be 7 500 hours. (According to European Broadcasting Union(EBU) standard, for color display the ratios for red, green, blue luminance should be 30 %, 59 % and 11 %, respectively, since 100cd/m2 is often used as initial luminance of green emission in degradation test, 50cd/m2 should be adapted as the initial luminance for red emission. )展开更多
TN383 99042120稀土元素Dy对金属/绝缘体/金属隧道结发光特性的影响=Effect of rare earth element Dy on the lightemission characteristics of MIM junction[刊,中]/王茂祥(东南大学物理系.江苏,南京(210009)),孙承林,俞建华,高中林...TN383 99042120稀土元素Dy对金属/绝缘体/金属隧道结发光特性的影响=Effect of rare earth element Dy on the lightemission characteristics of MIM junction[刊,中]/王茂祥(东南大学物理系.江苏,南京(210009)),孙承林,俞建华,高中林(东南大学电子工程系.江苏,南京(2100096))//光学学报.—1998,18(12).—1751-1755在普通金属/绝缘体/金属(MIM)隧道发光结的基础上。展开更多
TN383 98010036 工作条件对有机薄膜电致发光器件老化特性的影响=Effect of operating conditions on the degradationproperties of the OTFEL devices[刊,中]/刘星元,李文连,赵宇,于沂,孙刚,赵旭,钟国柱(中科院长春物理所.吉林,长春(1...TN383 98010036 工作条件对有机薄膜电致发光器件老化特性的影响=Effect of operating conditions on the degradationproperties of the OTFEL devices[刊,中]/刘星元,李文连,赵宇,于沂,孙刚,赵旭,钟国柱(中科院长春物理所.吉林,长春(130021)),虞家琪(中科院激发态物理开放研究实验室.吉林,长春(130021))//发光学报.-1997,18(1).-51-58对以Alq为发光层的有机薄膜电致发光器件。展开更多
TN383.1 96052831低压驱动薄膜电致发光器件及其发光特性的研究=Study of low-voltage drived thin film electroluminescentdevices and their luminescentcharacteristics[会,中]/张家雨,顾培夫,刘旭,唐晋发(浙江大学现代光学仪器国...TN383.1 96052831低压驱动薄膜电致发光器件及其发光特性的研究=Study of low-voltage drived thin film electroluminescentdevices and their luminescentcharacteristics[会,中]/张家雨,顾培夫,刘旭,唐晋发(浙江大学现代光学仪器国家重点实验室.浙江,杭州(310027))展开更多
TN383 97052837分层优化电致发光器件加速层的研究=Study of accelerationof layered optimization EL device[刊,中]/徐征（天津理工学院.天津（300191））,王向军,腾枫,陈立春（中科院激发态物理开放实验室.吉林,长春（130021））∥...TN383 97052837分层优化电致发光器件加速层的研究=Study of accelerationof layered optimization EL device[刊,中]/徐征（天津理工学院.天津（300191））,王向军,腾枫,陈立春（中科院激发态物理开放实验室.吉林,长春（130021））∥光电子.激光.—1996,7（6）.—370—372,377对于加速层分别研究了SiO<sub>2</sub>和ZnS两种材料的加速作用及采用这两种材料作为加速层的器件的传导电荷情况,实验结果表明ZnS作加速层的电荷注入能力优于SiO<sub>2</sub>作加速层,但是后者对热电子的加速作用明显优于前者,而且在同等条件下,以SiO<sub>2</sub>作加速层的器件的亮度明显高于ZnS作加速层的器件。展开更多
O482.31 99010012电场对ZnCdSe—ZnSe应变超晶格光致发光的影响= Effect of electric field on the photoluminescenceof ZnCdSe--ZnSe strained layer superlattice[刊,中]/郑著宏,关郑平,张吉英(中科院长春物理所.吉林,长春(130021))...O482.31 99010012电场对ZnCdSe—ZnSe应变超晶格光致发光的影响= Effect of electric field on the photoluminescenceof ZnCdSe--ZnSe strained layer superlattice[刊,中]/郑著宏,关郑平,张吉英(中科院长春物理所.吉林,长春(130021)),申德振,范希武(中科院激发态物理开放研究实验室.吉林,长春(130021))展开更多
TN383.1 98052821可见光LED的进展:超高亮度LED及应用(2)=Progress in visible LED:ultrahigh brightnessLED and applications (2)[刊,中]/张万生,梁春广(电子工业部第13研究所。河北,石家庄(050051))∥半导体情报。—1997,34(4)。—9...TN383.1 98052821可见光LED的进展:超高亮度LED及应用(2)=Progress in visible LED:ultrahigh brightnessLED and applications (2)[刊,中]/张万生,梁春广(电子工业部第13研究所。河北,石家庄(050051))∥半导体情报。—1997,34(4)。—9—17叙述了LED的国内外发展状况及应用。高亮度和超高亮度器件占未来LED产业和市场的主导。展开更多
TN312.8 2002010034两种不同的结构及掺杂的白色有机发光二极管=Whiteemitting organic thin film electroluminescent de-vices doped with dye[刊,中]/张步新,朱文清,蒋雪茵,张志林,许少鸿(上海大学嘉定校区材料系.
TN383 97020726超辐射发光二极管制作中刻蚀技术=Etching technologyin fabrication of super luminescencediode[会,中]/易向阳(电子部第44研究所.四川,永川(632163))//全国第七次光纤通信学术会议.—广西.桂林,95.11超辐射发光二极管...TN383 97020726超辐射发光二极管制作中刻蚀技术=Etching technologyin fabrication of super luminescencediode[会,中]/易向阳(电子部第44研究所.四川,永川(632163))//全国第七次光纤通信学术会议.—广西.桂林,95.11超辐射发光二极管是具有高功率、低相干性,稳定性好的光源。展开更多
TN312.8 2002042425阻挡层结构的蓝色有机发光二极管=Blue organiclight emitting diode with a blocking layer[刊,中]/朱文清,张步新,蒋雪茵,张志林,许少鸿(上海大学嘉定校区材料系.上海(201800))∥半导体光电.—2001,22(1).
文摘A stable red organic light-emitting device has been realized by doping a red dye tetra-methyljuloidine (DCJT)in electron transporting layer(ETL). The structure of the device was ITO/ CuPc/ NPB/ Alq: DCJT/ MgAg, where copper phthalocyanine(CuPc) was used as a buffer layer, N, N ’-his-(1-napthyl)-N, N’- diphenyl-1, 1’ -biphenyl-4, 4’ -diamine(NPB) as the hole transporting layer, tris(8-quinolinolato) aluminum complex(Alq) as ETL, in which DCJT was doped, indium tin oxide(ITO) and MgAg were as the anode and cathode, respectively. The red emission with peak at 620nm and CIE coordinates x = 0. 63, y = 0. 37, maximum luminance 4 687cd/m2, maximum luminous efficency 0. 83lm/W were obtained. The device showed a high stability under 12mA/cm2 current density continuous operation, the half decay time reached 2 500 hours at the initial luminance 150cd/m2 and the change of driving voltage was 0. 6mV/hour in the degradation process. If 50cd/m2 is taken as the initial luminance of red device, the half decay time is considered to be 7 500 hours. (According to European Broadcasting Union(EBU) standard, for color display the ratios for red, green, blue luminance should be 30 %, 59 % and 11 %, respectively, since 100cd/m2 is often used as initial luminance of green emission in degradation test, 50cd/m2 should be adapted as the initial luminance for red emission. )
文摘TN104.3 2000042279镝-镧-钛铁试剂荧光体系的协同发光效应及其分析应用=Columinescence effect of dysprosiumlanthanumtiron system and its application[刊,中]/王磊(山东医科大学药学系.山东(250012))
文摘TN383 99042120稀土元素Dy对金属/绝缘体/金属隧道结发光特性的影响=Effect of rare earth element Dy on the lightemission characteristics of MIM junction[刊,中]/王茂祥(东南大学物理系.江苏,南京(210009)),孙承林,俞建华,高中林(东南大学电子工程系.江苏,南京(2100096))//光学学报.—1998,18(12).—1751-1755在普通金属/绝缘体/金属(MIM)隧道发光结的基础上。
文摘TN383 98010036 工作条件对有机薄膜电致发光器件老化特性的影响=Effect of operating conditions on the degradationproperties of the OTFEL devices[刊,中]/刘星元,李文连,赵宇,于沂,孙刚,赵旭,钟国柱(中科院长春物理所.吉林,长春(130021)),虞家琪(中科院激发态物理开放研究实验室.吉林,长春(130021))//发光学报.-1997,18(1).-51-58对以Alq为发光层的有机薄膜电致发光器件。
文摘TN383.1 96052831低压驱动薄膜电致发光器件及其发光特性的研究=Study of low-voltage drived thin film electroluminescentdevices and their luminescentcharacteristics[会,中]/张家雨,顾培夫,刘旭,唐晋发(浙江大学现代光学仪器国家重点实验室.浙江,杭州(310027))
文摘TN383 97052837分层优化电致发光器件加速层的研究=Study of accelerationof layered optimization EL device[刊,中]/徐征（天津理工学院.天津（300191））,王向军,腾枫,陈立春（中科院激发态物理开放实验室.吉林,长春（130021））∥光电子.激光.—1996,7（6）.—370—372,377对于加速层分别研究了SiO<sub>2</sub>和ZnS两种材料的加速作用及采用这两种材料作为加速层的器件的传导电荷情况,实验结果表明ZnS作加速层的电荷注入能力优于SiO<sub>2</sub>作加速层,但是后者对热电子的加速作用明显优于前者,而且在同等条件下,以SiO<sub>2</sub>作加速层的器件的亮度明显高于ZnS作加速层的器件。
文摘O482.31 99010012电场对ZnCdSe—ZnSe应变超晶格光致发光的影响= Effect of electric field on the photoluminescenceof ZnCdSe--ZnSe strained layer superlattice[刊,中]/郑著宏,关郑平,张吉英(中科院长春物理所.吉林,长春(130021)),申德振,范希武(中科院激发态物理开放研究实验室.吉林,长春(130021))
文摘TN383.1 98052821可见光LED的进展:超高亮度LED及应用(2)=Progress in visible LED:ultrahigh brightnessLED and applications (2)[刊,中]/张万生,梁春广(电子工业部第13研究所。河北,石家庄(050051))∥半导体情报。—1997,34(4)。—9—17叙述了LED的国内外发展状况及应用。高亮度和超高亮度器件占未来LED产业和市场的主导。
文摘TN312.8 2002010034两种不同的结构及掺杂的白色有机发光二极管=Whiteemitting organic thin film electroluminescent de-vices doped with dye[刊,中]/张步新,朱文清,蒋雪茵,张志林,许少鸿(上海大学嘉定校区材料系.
文摘TN383 97020726超辐射发光二极管制作中刻蚀技术=Etching technologyin fabrication of super luminescencediode[会,中]/易向阳(电子部第44研究所.四川,永川(632163))//全国第七次光纤通信学术会议.—广西.桂林,95.11超辐射发光二极管是具有高功率、低相干性,稳定性好的光源。
文摘TN312.8 2002042425阻挡层结构的蓝色有机发光二极管=Blue organiclight emitting diode with a blocking layer[刊,中]/朱文清,张步新,蒋雪茵,张志林,许少鸿(上海大学嘉定校区材料系.上海(201800))∥半导体光电.—2001,22(1).
