BaZnP2O7∶Eu3+ phosphor was synthesized by a high temperature solid state reaction.The compound shows four major emission peaks locating at 588,613,622 and 654 nm that correspond to the 5D0-7F1,5D0-7F2 and 5D0-7F3 typ...BaZnP2O7∶Eu3+ phosphor was synthesized by a high temperature solid state reaction.The compound shows four major emission peaks locating at 588,613,622 and 654 nm that correspond to the 5D0-7F1,5D0-7F2 and 5D0-7F3 typical transition of Eu3+,respectively.The influence of the concentration of Eu3+ ions on the emission intensity was investigated and the concentration quench did not occured.The role of charge compensation of Li+,Na+ and Cl-ions to the emission intensity was also studied.It was found that Li+ ions gave the best improvement to enhance the intensity of the emissions.The results show that BaZnP2O7∶Eu3+red-emitting phosphor is very suitable for white light emitting diode(w-LED)based on UV InGaN chip.展开更多
基金Supported by the National Natural Science Foundation of China(No.51572232,No.51561135015)Key Technology Research and Development Program of Ningbo(No.2011B1001)
文摘BaZnP2O7∶Eu3+ phosphor was synthesized by a high temperature solid state reaction.The compound shows four major emission peaks locating at 588,613,622 and 654 nm that correspond to the 5D0-7F1,5D0-7F2 and 5D0-7F3 typical transition of Eu3+,respectively.The influence of the concentration of Eu3+ ions on the emission intensity was investigated and the concentration quench did not occured.The role of charge compensation of Li+,Na+ and Cl-ions to the emission intensity was also studied.It was found that Li+ ions gave the best improvement to enhance the intensity of the emissions.The results show that BaZnP2O7∶Eu3+red-emitting phosphor is very suitable for white light emitting diode(w-LED)based on UV InGaN chip.
