Microstructure and electrical properties of La2 O3-doped ZnO-Bi2 O3 thin films prepared by sol–gel process have been investigated.X-ray diffraction shows that most diffraction peaks of ZnO are equal,and the crystals ...Microstructure and electrical properties of La2 O3-doped ZnO-Bi2 O3 thin films prepared by sol–gel process have been investigated.X-ray diffraction shows that most diffraction peaks of ZnO are equal,and the crystals of ZnO grow well.Scanning electron microscopy and atomic force microscopy results indicate that the samples have a good structure and lower surface roughness.The nonlinear V–I characteristics of the films show that La2 O3 develops the electrical properties largely and the best doped content is 0.3% lanthanum ion,with the leakage current of 0.25 mA,the threshold field of 150 V/mm and the nonlinear coefficient of 4.0 in detail.展开更多
In this study,a high-purity In_(2)Ga_(2)ZnO_(7) ceramic target was used to deposit indium gallium zinc oxide(IGZO)films by RF magnetron sputtering technology.The microstructure,growth state,optical and electrical prop...In this study,a high-purity In_(2)Ga_(2)ZnO_(7) ceramic target was used to deposit indium gallium zinc oxide(IGZO)films by RF magnetron sputtering technology.The microstructure,growth state,optical and electrical properties of the IGZO films were studied.The results showed that the surface of the IGZO film was uniform and smooth at room temperature.As the substrate temperature increased,the surface roughness of the film gradually increased.From room temperature to 300℃,all the films maintained amorphous phase and good thermal stabilities.Moreover,the transmission in the visible region decreased from 91.93%to 91.08%,and the band gap slightly decreased from 3.79 to 3.76 eV.The characterization of the film via atomic force microscope(AFM)and X-ray photoelectron spectroscopy(XPS)demonstrated that the film prepared at room temperature exhibited the lowest surface roughness and the largest content of oxygen vacancies.With the rise in temperature,the non-homogeneous particle distribution,increase in the surface roughness,and reduction in the number of oxygen vacancies resulted in lower performance of theα-IGZO film.Comprehensive analysis showed that the best optical and electrical properties can be obtained by depositing IGZO films at room temperature,which indicates their potential applications in flexible substrates.展开更多
The Nd Fe B/Co multilayer films were prepared by magnetron sputtering. After that, the samples were annealed at 600 ℃ for 20 min. The surface morphology, phase structures and magnetic properties of Mo（50 nm）/[Nd F...The Nd Fe B/Co multilayer films were prepared by magnetron sputtering. After that, the samples were annealed at 600 ℃ for 20 min. The surface morphology, phase structures and magnetic properties of Mo（50 nm）/[Nd Fe B（100 nm）/Co（y）]×10/Mo（50 nm） thin films were researched by AFM, XRD and VSM, respectively. The results show that the films show stronger perpendicular magnetic anisotropy. When the thickness of Co layers is 10 nm, the coercivity Hc⊥ is the maximum, 295 k A/m. However, for y=10-20, the reduced remanence M/Ms of films has increased. When the thickness of Co layers is 20-30 nm, the Nd Fe B/Co multilayer films obtained more superior magnetic properties with M/Ms =0.95.展开更多
基金Project(20123227120021)supported by the Specialized Research Fund for the Doctoral Program of Higher Education of ChinaProject(BK2012156)supported by the Natural Science Foundation of Jiangsu Province,China+3 种基金Project(KFJJ201105)supported by the Opening Project of State Key Laboratory of Electronic Thin Films and Integrated Devices,ChinaProject(CJ20125001)supported by the Application Program for Basic Research of Changzhou,ChinaProject(13KJB430006)supported by the Universities Natural Science Research project of Jiangsu Province,ChinaProject supported by the Industrial Center of Jiangsu University Undergraduate Practice-Innovation Training Program,China
文摘Microstructure and electrical properties of La2 O3-doped ZnO-Bi2 O3 thin films prepared by sol–gel process have been investigated.X-ray diffraction shows that most diffraction peaks of ZnO are equal,and the crystals of ZnO grow well.Scanning electron microscopy and atomic force microscopy results indicate that the samples have a good structure and lower surface roughness.The nonlinear V–I characteristics of the films show that La2 O3 develops the electrical properties largely and the best doped content is 0.3% lanthanum ion,with the leakage current of 0.25 mA,the threshold field of 150 V/mm and the nonlinear coefficient of 4.0 in detail.
基金Project(2018M632797)supported by the Postdoctoral Science Foundation of ChinaProject(52004253)supported by the National Natural Science Foundation of China。
文摘In this study,a high-purity In_(2)Ga_(2)ZnO_(7) ceramic target was used to deposit indium gallium zinc oxide(IGZO)films by RF magnetron sputtering technology.The microstructure,growth state,optical and electrical properties of the IGZO films were studied.The results showed that the surface of the IGZO film was uniform and smooth at room temperature.As the substrate temperature increased,the surface roughness of the film gradually increased.From room temperature to 300℃,all the films maintained amorphous phase and good thermal stabilities.Moreover,the transmission in the visible region decreased from 91.93%to 91.08%,and the band gap slightly decreased from 3.79 to 3.76 eV.The characterization of the film via atomic force microscope(AFM)and X-ray photoelectron spectroscopy(XPS)demonstrated that the film prepared at room temperature exhibited the lowest surface roughness and the largest content of oxygen vacancies.With the rise in temperature,the non-homogeneous particle distribution,increase in the surface roughness,and reduction in the number of oxygen vacancies resulted in lower performance of theα-IGZO film.Comprehensive analysis showed that the best optical and electrical properties can be obtained by depositing IGZO films at room temperature,which indicates their potential applications in flexible substrates.
文摘The Nd Fe B/Co multilayer films were prepared by magnetron sputtering. After that, the samples were annealed at 600 ℃ for 20 min. The surface morphology, phase structures and magnetic properties of Mo（50 nm）/[Nd Fe B（100 nm）/Co（y）]×10/Mo（50 nm） thin films were researched by AFM, XRD and VSM, respectively. The results show that the films show stronger perpendicular magnetic anisotropy. When the thickness of Co layers is 10 nm, the coercivity Hc⊥ is the maximum, 295 k A/m. However, for y=10-20, the reduced remanence M/Ms of films has increased. When the thickness of Co layers is 20-30 nm, the Nd Fe B/Co multilayer films obtained more superior magnetic properties with M/Ms =0.95.
