High-quality antiferromagnetic(AFM)θ-phase manganese nitride(MnN)films were successfully grown on MgO(001)substrates by plasma-assisted molecular beam epitaxy.Structural analysis confirms the high-quality MnN film ha...High-quality antiferromagnetic(AFM)θ-phase manganese nitride(MnN)films were successfully grown on MgO(001)substrates by plasma-assisted molecular beam epitaxy.Structural analysis confirms the high-quality MnN film has a tetragonal distortion with a c/a ratio of~0.98.The film exhibits exceptional stability in both aqueous and ambient conditions,which is a crucial factor for practical applications.Electrical transport reveals its metallic behavior with an upturn at low temperatures,which could be attributed to the Kondo effect originated from nitrogen vacancy-induced magnetic impurities.Room temperature exchange bias has been demonstrated in a MnN/CoFeB heterostructure,verifying the AFM ordering of MnN.Considering its high Néel temperature~650 K,superior stability,and low-cost,this work highlights the epitaxial MnN films as a promising candidate for AFM spintronic applications.展开更多
The recovery of indium from waste indium tin oxide （ITO） target has great significance for the economy and environment.Based on our previous study on the optimization of acid leaching technique,the present study foc...The recovery of indium from waste indium tin oxide （ITO） target has great significance for the economy and environment.Based on our previous study on the optimization of acid leaching technique,the present study focuses on tin removal via zinc substitution and indium recovery from a tin-free leach solution.The results show that when the amount of added zinc powder and reaction time increase,the tin removal effect can be improved.The optimal conditions obtained are as follows：additional content of zinc powder from 20 g/L to 25 g/L,reaction temperature of 60 ℃,and reaction time from 3 h to 4 h.Under this condition,the tin removal rate exceeds 98%,and the tin content in the tin removal solution is lower than 0.05 g/L.After tin removal,the substitution time could be reduced from 3-5 d to 1-2 d by neutralizing the residual acid by using alkaline residue and maintaining the pH value less than 2.The indium recovery rate is also improved when this condition is used.The indium content in the tin residue is reduced to lower than 0.1% and the acid-insoluble β-SnO2 could be obtained via the strong nitric acid leaching of the indium-containing tin residue.Indium could be recovered from ITO with a high purity of 99.995% via electrorefining.展开更多
文摘High-quality antiferromagnetic(AFM)θ-phase manganese nitride(MnN)films were successfully grown on MgO(001)substrates by plasma-assisted molecular beam epitaxy.Structural analysis confirms the high-quality MnN film has a tetragonal distortion with a c/a ratio of~0.98.The film exhibits exceptional stability in both aqueous and ambient conditions,which is a crucial factor for practical applications.Electrical transport reveals its metallic behavior with an upturn at low temperatures,which could be attributed to the Kondo effect originated from nitrogen vacancy-induced magnetic impurities.Room temperature exchange bias has been demonstrated in a MnN/CoFeB heterostructure,verifying the AFM ordering of MnN.Considering its high Néel temperature~650 K,superior stability,and low-cost,this work highlights the epitaxial MnN films as a promising candidate for AFM spintronic applications.
基金Project(2012BAE06B01)supported by the National High Technology Research and Development Program of China
文摘The recovery of indium from waste indium tin oxide （ITO） target has great significance for the economy and environment.Based on our previous study on the optimization of acid leaching technique,the present study focuses on tin removal via zinc substitution and indium recovery from a tin-free leach solution.The results show that when the amount of added zinc powder and reaction time increase,the tin removal effect can be improved.The optimal conditions obtained are as follows：additional content of zinc powder from 20 g/L to 25 g/L,reaction temperature of 60 ℃,and reaction time from 3 h to 4 h.Under this condition,the tin removal rate exceeds 98%,and the tin content in the tin removal solution is lower than 0.05 g/L.After tin removal,the substitution time could be reduced from 3-5 d to 1-2 d by neutralizing the residual acid by using alkaline residue and maintaining the pH value less than 2.The indium recovery rate is also improved when this condition is used.The indium content in the tin residue is reduced to lower than 0.1% and the acid-insoluble β-SnO2 could be obtained via the strong nitric acid leaching of the indium-containing tin residue.Indium could be recovered from ITO with a high purity of 99.995% via electrorefining.
