目的探讨工作气压对管内等离子体放电光学现象以及Si/O-DLC(Si and O Incorporated DLC,Si/O-DLC)薄膜结构与性能的影响,为获得管内高质量、均匀的Si/O-DLC薄膜制备工艺技术提供指导。方法利用空心阴极等离子体增强化学气相沉积(Hollow ...目的探讨工作气压对管内等离子体放电光学现象以及Si/O-DLC(Si and O Incorporated DLC,Si/O-DLC)薄膜结构与性能的影响,为获得管内高质量、均匀的Si/O-DLC薄膜制备工艺技术提供指导。方法利用空心阴极等离子体增强化学气相沉积(Hollow Cathode Plasma Enhanced Chemical Vapor Deposition,HC-PECVD)技术,通过改变工作气压在管内沉积Si/O-DLC薄膜。利用高速摄像机记录并对比不同工作气压下管内等离子体放电光学现象。通过SPM、XPS和Raman光谱仪表征不同工作气压下薄膜的三维立体表面形貌和微观结构,并利用SEM、纳米压痕仪以及划痕测试系统,对比研究管内Si/O-DLC薄膜的硬度、弹性模量、膜基结合力以及沿管轴向的薄膜厚度分布。结果随着工作气压的上升,管径向中心处亮斑面积和光强先增大增强后趋于缩小暗淡。在不同工作气压下,均能够在管内获得表面光滑的Si/O-DLC薄膜,粗糙度为3~10 nm。随着工作气压的上升,管内Si/O-DLC薄膜的平均厚度从1.42μm增大到2.06μm,且沿管轴向的薄膜厚度分布均匀度从24%显著提高到65%;不同工作气压下管内Si/O-DLC薄膜沿管轴向平均硬度呈先增大后减小的趋势,总体平均硬度可达(14±1)GPa。管内Si/O-DLC薄膜在工作气压上升到25 mTorr时获得较高的平均膜基结合力。结论改变工作气压能够显著影响管内壁Si/O-DLC薄膜的结构与性能,当工作气压为25 m Torr时,在管内获得均匀性最优、结合力较高的Si/O-DLC薄膜。展开更多
O432.1 94031576用于软 X 射线光学技术中的脉冲等离子体源=Thepulsed plasma sources used in the soft X-ray optical techniques[刊,中]/郭玉彬(中科院长春光机所)∥LSI 制造与测试.—1993,14(5).—22～28对国际上广泛应用的几类软 X...O432.1 94031576用于软 X 射线光学技术中的脉冲等离子体源=Thepulsed plasma sources used in the soft X-ray optical techniques[刊,中]/郭玉彬(中科院长春光机所)∥LSI 制造与测试.—1993,14(5).—22～28对国际上广泛应用的几类软 X 线(?)的典型性能参数作了综合比较。展开更多
This work is devoted to the experimental investigation of an AC argon gliding arc discharge at atmospheric pressure.The dynamic behaviour of the argon gliding arc plasma is investigated by the oscillations of the elec...This work is devoted to the experimental investigation of an AC argon gliding arc discharge at atmospheric pressure.The dynamic behaviour of the argon gliding arc plasma is investigated by the oscillations of the electrical signals,while the time-resolved arc root motion behaviour on the electrode wall is analyzed by high-speed photography.It is found that the anode and cathode arc roots exhibit different motion behaviour on the electrode surface.In addition,emission spectroscopic technique has been employed to determine the axial distribution of the gas temperature and electron density in the argon gliding arc plasma.展开更多
O484.1 2001010471直流辉光放电等离子体增强化学气相法制备金刚石及氮化碳薄膜=Synthesis of diamond and carbonnitride by DC.glow discharge plasma enhancedchemical vapor deposition[刊,中]/于威,王淑芳, 丁学成,韩理,刘志强,张...O484.1 2001010471直流辉光放电等离子体增强化学气相法制备金刚石及氮化碳薄膜=Synthesis of diamond and carbonnitride by DC.glow discharge plasma enhancedchemical vapor deposition[刊,中]/于威,王淑芳, 丁学成,韩理,刘志强,张连水,傅广生(河北大学物理系.河北,保定(071002))∥河北大学学报.自然科学版.-2000,20(1).-78-82采用直流辉光放电等离子体增强化学气相沉积(PECVD)技术方法,在Si(100)衬底上制备了金刚石薄膜。展开更多
文摘目的探讨工作气压对管内等离子体放电光学现象以及Si/O-DLC(Si and O Incorporated DLC,Si/O-DLC)薄膜结构与性能的影响,为获得管内高质量、均匀的Si/O-DLC薄膜制备工艺技术提供指导。方法利用空心阴极等离子体增强化学气相沉积(Hollow Cathode Plasma Enhanced Chemical Vapor Deposition,HC-PECVD)技术,通过改变工作气压在管内沉积Si/O-DLC薄膜。利用高速摄像机记录并对比不同工作气压下管内等离子体放电光学现象。通过SPM、XPS和Raman光谱仪表征不同工作气压下薄膜的三维立体表面形貌和微观结构,并利用SEM、纳米压痕仪以及划痕测试系统,对比研究管内Si/O-DLC薄膜的硬度、弹性模量、膜基结合力以及沿管轴向的薄膜厚度分布。结果随着工作气压的上升,管径向中心处亮斑面积和光强先增大增强后趋于缩小暗淡。在不同工作气压下,均能够在管内获得表面光滑的Si/O-DLC薄膜,粗糙度为3~10 nm。随着工作气压的上升,管内Si/O-DLC薄膜的平均厚度从1.42μm增大到2.06μm,且沿管轴向的薄膜厚度分布均匀度从24%显著提高到65%;不同工作气压下管内Si/O-DLC薄膜沿管轴向平均硬度呈先增大后减小的趋势,总体平均硬度可达(14±1)GPa。管内Si/O-DLC薄膜在工作气压上升到25 mTorr时获得较高的平均膜基结合力。结论改变工作气压能够显著影响管内壁Si/O-DLC薄膜的结构与性能,当工作气压为25 m Torr时,在管内获得均匀性最优、结合力较高的Si/O-DLC薄膜。
文摘O432.1 94031576用于软 X 射线光学技术中的脉冲等离子体源=Thepulsed plasma sources used in the soft X-ray optical techniques[刊,中]/郭玉彬(中科院长春光机所)∥LSI 制造与测试.—1993,14(5).—22～28对国际上广泛应用的几类软 X 线(?)的典型性能参数作了综合比较。
基金Project supported by the Royal Society and the Royal Academy of Engineering
文摘This work is devoted to the experimental investigation of an AC argon gliding arc discharge at atmospheric pressure.The dynamic behaviour of the argon gliding arc plasma is investigated by the oscillations of the electrical signals,while the time-resolved arc root motion behaviour on the electrode wall is analyzed by high-speed photography.It is found that the anode and cathode arc roots exhibit different motion behaviour on the electrode surface.In addition,emission spectroscopic technique has been employed to determine the axial distribution of the gas temperature and electron density in the argon gliding arc plasma.
文摘O484.1 2001010471直流辉光放电等离子体增强化学气相法制备金刚石及氮化碳薄膜=Synthesis of diamond and carbonnitride by DC.glow discharge plasma enhancedchemical vapor deposition[刊,中]/于威,王淑芳, 丁学成,韩理,刘志强,张连水,傅广生(河北大学物理系.河北,保定(071002))∥河北大学学报.自然科学版.-2000,20(1).-78-82采用直流辉光放电等离子体增强化学气相沉积(PECVD)技术方法,在Si(100)衬底上制备了金刚石薄膜。
