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缺陷对一维尘埃等离子体晶格色散关系的影响
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作者 黄雪梅 王春华 +1 位作者 孙晓霞 胡乐佳 《合肥工业大学学报(自然科学版)》 CAS CSCD 北大核心 2015年第4期569-571,共3页
文章采用一维尘埃等离子体晶格模型,对存在单个晶格缺陷时,在其中传播的横波和纵波的色散关系进行了推导,通过计算发现当缺陷粒子的电量和质量大于原有带电粒子时会出现能隙结构。这个结果完善和验证了当原有晶格链的周期性被破坏时,会... 文章采用一维尘埃等离子体晶格模型,对存在单个晶格缺陷时,在其中传播的横波和纵波的色散关系进行了推导,通过计算发现当缺陷粒子的电量和质量大于原有带电粒子时会出现能隙结构。这个结果完善和验证了当原有晶格链的周期性被破坏时,会出现能隙结构的理论。 展开更多
关键词 尘埃 离子晶格 缺陷 色散关系 能隙
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Ion implantation process and lattice damage mechanism of boron doped crystalline germanium
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作者 HABIBA Um E CHEN Tian-Ye +8 位作者 LIU Chi-Xian DOU Wei LIU Xiao-Yan LING Jing-Wei PAN Chang-Yi WANG Peng DENG Hui-Yong SHEN Hong DAI Ning 《红外与毫米波学报》 CSCD 北大核心 2024年第6期749-754,共6页
The response wavelength of the blocked-impurity-band(BIB)structured infrared detector can reach 200µm,which is the most important very long wavelength infrared astronomical detector.The ion implantation method gr... The response wavelength of the blocked-impurity-band(BIB)structured infrared detector can reach 200µm,which is the most important very long wavelength infrared astronomical detector.The ion implantation method greatly simplifies the fabrication process of the device,but it is easy to cause lattice damage,introduce crystalline defects,and lead to the increase of the dark current of detectors.Herein,the boron-doped germanium ion implantation process was studied,and the involved lattice damage mechanism was discussed.Experimental conditions involved using 80 keV energy for boron ion implantation,with doses ranging from 1×10^(13)cm^(-2)to 3×10^(15)cm^(-2).After implantation,thermal annealing at 450℃was implemented to optimize dopant activation and mitigate the effects of ion implantation.Various sophisticated characterization techniques,including X-ray dif⁃fraction(XRD),Raman spectroscopy,X-ray photoelectron spectroscopy(XPS),and secondary ion mass spec⁃trometry(SIMS)were used to clarify lattice damage.At lower doses,no notable structural alterations were ob⁃served.However,as the dosage increased,specific micro distortions became apparent,which could be attributed to point defects and residual strain.The created lattice damage was recovered by thermal treatment,however,an irreversible strain induced by implantation still existed at heavily dosed samples. 展开更多
关键词 boron doped germanium ion implantation lattice damage
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光学晶体、液晶
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《中国光学》 EI CAS 2000年第2期96-97,共2页
O731 2000021386非简谐性离子晶格在光场中的能谱:动态斯塔克效应=Energy spectrum of anharmonic ionic-crystallattice in lightfield a dynamical Stark effect[刊,中]/欧发(华南理工大学应用物理系.广东,广州(510641)),何明高,吴福... O731 2000021386非简谐性离子晶格在光场中的能谱:动态斯塔克效应=Energy spectrum of anharmonic ionic-crystallattice in lightfield a dynamical Stark effect[刊,中]/欧发(华南理工大学应用物理系.广东,广州(510641)),何明高,吴福根(广东工业大学数理系.广东,广州(510090))//光学学报.-1999,19(7).-889-895以在偶极近似与旋转波近似下导出的哈密顿算符为基础,并以单模光频支声子与单模光场构成的共振耦合系统为简化模型,取得该耦合系统相互作用能谱的比较严格的解析解,同时还发现一种起源于声子-声子耦合的真空平移效应。图2参9(严寒) 展开更多
关键词 卤代液晶 动态斯塔克效应 国家重点实验室 相互作用能 单轴晶体 旋转波近似 哈密顿算符 非简谐性 离子晶格 简化模型
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