The response wavelength of the blocked-impurity-band(BIB)structured infrared detector can reach 200µm,which is the most important very long wavelength infrared astronomical detector.The ion implantation method gr...The response wavelength of the blocked-impurity-band(BIB)structured infrared detector can reach 200µm,which is the most important very long wavelength infrared astronomical detector.The ion implantation method greatly simplifies the fabrication process of the device,but it is easy to cause lattice damage,introduce crystalline defects,and lead to the increase of the dark current of detectors.Herein,the boron-doped germanium ion implantation process was studied,and the involved lattice damage mechanism was discussed.Experimental conditions involved using 80 keV energy for boron ion implantation,with doses ranging from 1×10^(13)cm^(-2)to 3×10^(15)cm^(-2).After implantation,thermal annealing at 450℃was implemented to optimize dopant activation and mitigate the effects of ion implantation.Various sophisticated characterization techniques,including X-ray dif⁃fraction(XRD),Raman spectroscopy,X-ray photoelectron spectroscopy(XPS),and secondary ion mass spec⁃trometry(SIMS)were used to clarify lattice damage.At lower doses,no notable structural alterations were ob⁃served.However,as the dosage increased,specific micro distortions became apparent,which could be attributed to point defects and residual strain.The created lattice damage was recovered by thermal treatment,however,an irreversible strain induced by implantation still existed at heavily dosed samples.展开更多
基金Supported by National Key R&D Program of China(2023YFA1608701)National Natural Science Foundation of China(62274168,11933006,U2141240)Hangzhou Leading Innovation and Entrepreneurship Team(TD2020002)。
文摘The response wavelength of the blocked-impurity-band(BIB)structured infrared detector can reach 200µm,which is the most important very long wavelength infrared astronomical detector.The ion implantation method greatly simplifies the fabrication process of the device,but it is easy to cause lattice damage,introduce crystalline defects,and lead to the increase of the dark current of detectors.Herein,the boron-doped germanium ion implantation process was studied,and the involved lattice damage mechanism was discussed.Experimental conditions involved using 80 keV energy for boron ion implantation,with doses ranging from 1×10^(13)cm^(-2)to 3×10^(15)cm^(-2).After implantation,thermal annealing at 450℃was implemented to optimize dopant activation and mitigate the effects of ion implantation.Various sophisticated characterization techniques,including X-ray dif⁃fraction(XRD),Raman spectroscopy,X-ray photoelectron spectroscopy(XPS),and secondary ion mass spec⁃trometry(SIMS)were used to clarify lattice damage.At lower doses,no notable structural alterations were ob⁃served.However,as the dosage increased,specific micro distortions became apparent,which could be attributed to point defects and residual strain.The created lattice damage was recovered by thermal treatment,however,an irreversible strain induced by implantation still existed at heavily dosed samples.
