Nanostructured BN and BN-Co films with Cu,Co,Au as the top electrodes,and Pt as the bottom electrodes were grown by magnetron sputtering.Both BN samples and BN-Co ones show bipolar resistive switching behaviors.For th...Nanostructured BN and BN-Co films with Cu,Co,Au as the top electrodes,and Pt as the bottom electrodes were grown by magnetron sputtering.Both BN samples and BN-Co ones show bipolar resistive switching behaviors.For the sample with active Cu as the top electrode,the formation and rupture of metallic Cu conductive filaments can explain the resistive switching behavior;for the other samples,the generation and annihilation of nitrogen vacancies under the electric stimuli may contribute to the occurrence of resistive switching.Taking advantage of the formed and broken Co-N bonds during resistive switching,the saturation magnetization of the BN-Co films can be modulated.Thus,it investigated the resistive switching behavior of BN and BN-Co materials in this work.Similar to that of oxide materials,the resistive switching behaviors of the nitrides may be attributed to the movement of cations or anions within the dielectric or electrodes during the application of voltage.Additionally,ion migration may lead to the formation or breaking of Co-N bonds,which can effectively regulate the magnetism of BN-Co materials.This study extends resistive switching materials to nitrides,enabling the regulation of magnetism along with resistance changes,thus providing insights for the design of novel voltage-controlled magnetic devices and achieving multi-functionality.展开更多
Developing lightweight and flexible thin films for electromagnetic interference(EMI)shielding is of great importance.Porous thin films of reduced graphene oxide containing SiC whiskers(SiC@RGO)for EMI shielding were p...Developing lightweight and flexible thin films for electromagnetic interference(EMI)shielding is of great importance.Porous thin films of reduced graphene oxide containing SiC whiskers(SiC@RGO)for EMI shielding were prepared by a two-step reduction of graphene oxide(GO),in which the two steps were chemical reduction by HI and the solid phase microwave irradiation.A significant increase of the film thickness from around 20 to 200μm was achieved due to the formation of a porous structure by gases released during the 3 s of solid phase microwave irradiation.The total shielding effectiveness(SET)and the reflective SE(SE_(R))of the SiC@RGO porous thin films depended on the GO/SiC mass ratio.The highest SET achieved was 35.6 dB while the SE_(R) was only 2.8 dB,when the GO/SiC mass ratio was 4∶1.The addition of SiC whiskers was critical for the multi-reflection,interfacial po-larization and dielectric attenuation of EM waves.A multilayer film with a gradient change of SE values was constructed using SiC@RGO porous films and multi-walled carbon nanotubes buckypapers.The highest SET of the multilayer films reached 75.1 dB with a SE_(R) of 2.7 dB for a film thickness of about 1.5 mm.These porous SiC@RGO thin films should find use in multilayer or sand-wich structures for EMI absorption in packaging or lining.展开更多
Local segregation in Cu-In precursors and its effects on the element distribution and microstructures of selenized CuInSe2 thin films were investigated. Cu-In precursors with an ideal total mole ratio of Cu to In of 0...Local segregation in Cu-In precursors and its effects on the element distribution and microstructures of selenized CuInSe2 thin films were investigated. Cu-In precursors with an ideal total mole ratio of Cu to In of 0.92 were prepared by middle frequency alternating current magnetron sputtering with Cu-In alloy target, then CuInSe2 absorbers for solar cells were formed by selenization process in selenium atmosphere. Scanning electron microscope and energy dispersive X-ray spectroscope were used respectively to observe the surface morphologies and determine the compositions of both Cu-In precursors and CuInSe2 thin films. Their microstructures were characterized by X-ray diffractometry and Raman spectroscope. The results show that Cu-In precursors are mainly composed of (Cu11In9) phase with In-rich solid solution. Stoichiometric CuInSe2 thin films with a homogeneous element distribution and single chalcopyrite phase can be synthesized from a segregated Cu-In precursor film with an ideal total mole ratio of Cu to In of 0.92. CuInSe2 thin film shows P-type conductivity and its resistivity reaches 1.2×103Ω·cm.展开更多
文摘Nanostructured BN and BN-Co films with Cu,Co,Au as the top electrodes,and Pt as the bottom electrodes were grown by magnetron sputtering.Both BN samples and BN-Co ones show bipolar resistive switching behaviors.For the sample with active Cu as the top electrode,the formation and rupture of metallic Cu conductive filaments can explain the resistive switching behavior;for the other samples,the generation and annihilation of nitrogen vacancies under the electric stimuli may contribute to the occurrence of resistive switching.Taking advantage of the formed and broken Co-N bonds during resistive switching,the saturation magnetization of the BN-Co films can be modulated.Thus,it investigated the resistive switching behavior of BN and BN-Co materials in this work.Similar to that of oxide materials,the resistive switching behaviors of the nitrides may be attributed to the movement of cations or anions within the dielectric or electrodes during the application of voltage.Additionally,ion migration may lead to the formation or breaking of Co-N bonds,which can effectively regulate the magnetism of BN-Co materials.This study extends resistive switching materials to nitrides,enabling the regulation of magnetism along with resistance changes,thus providing insights for the design of novel voltage-controlled magnetic devices and achieving multi-functionality.
文摘Developing lightweight and flexible thin films for electromagnetic interference(EMI)shielding is of great importance.Porous thin films of reduced graphene oxide containing SiC whiskers(SiC@RGO)for EMI shielding were prepared by a two-step reduction of graphene oxide(GO),in which the two steps were chemical reduction by HI and the solid phase microwave irradiation.A significant increase of the film thickness from around 20 to 200μm was achieved due to the formation of a porous structure by gases released during the 3 s of solid phase microwave irradiation.The total shielding effectiveness(SET)and the reflective SE(SE_(R))of the SiC@RGO porous thin films depended on the GO/SiC mass ratio.The highest SET achieved was 35.6 dB while the SE_(R) was only 2.8 dB,when the GO/SiC mass ratio was 4∶1.The addition of SiC whiskers was critical for the multi-reflection,interfacial po-larization and dielectric attenuation of EM waves.A multilayer film with a gradient change of SE values was constructed using SiC@RGO porous films and multi-walled carbon nanotubes buckypapers.The highest SET of the multilayer films reached 75.1 dB with a SE_(R) of 2.7 dB for a film thickness of about 1.5 mm.These porous SiC@RGO thin films should find use in multilayer or sand-wich structures for EMI absorption in packaging or lining.
基金Project(2004AA513023) supported by the National High Technology Research and Development Program of China
文摘Local segregation in Cu-In precursors and its effects on the element distribution and microstructures of selenized CuInSe2 thin films were investigated. Cu-In precursors with an ideal total mole ratio of Cu to In of 0.92 were prepared by middle frequency alternating current magnetron sputtering with Cu-In alloy target, then CuInSe2 absorbers for solar cells were formed by selenization process in selenium atmosphere. Scanning electron microscope and energy dispersive X-ray spectroscope were used respectively to observe the surface morphologies and determine the compositions of both Cu-In precursors and CuInSe2 thin films. Their microstructures were characterized by X-ray diffractometry and Raman spectroscope. The results show that Cu-In precursors are mainly composed of (Cu11In9) phase with In-rich solid solution. Stoichiometric CuInSe2 thin films with a homogeneous element distribution and single chalcopyrite phase can be synthesized from a segregated Cu-In precursor film with an ideal total mole ratio of Cu to In of 0.92. CuInSe2 thin film shows P-type conductivity and its resistivity reaches 1.2×103Ω·cm.
