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MgB2超导薄膜
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《现代化工》 CAS CSCD 北大核心 2002年第12期61-61,共1页
关键词 二硼化镁 硼系超导电路 美国威斯康星大学 射频磁控管溅射法 MGB2 超导薄膜
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超导永久磁石在高真空下的等离子体成膜技术
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《现代化工》 CAS CSCD 北大核心 2004年第9期71-71,共1页
关键词 超导永久磁石 等离子体成膜 磁控管溅射法 太阳能电池 日本名古屋大学
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Electrochemical Behaviour of Sputtering Deposited DLC Films 被引量:1
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作者 LIU Erjia,ZENG A,LIU L X( School of Mechanical and Production Engineering, Nanyang Technological University ,50 Nanyang Avenue, Singapore 639798) 《中山大学学报(自然科学版)》 CAS CSCD 北大核心 2003年第A19期11-14,共4页
Diamondlike carbon (DLC) films were deposited via magnetron sputtering process. The energetic ion hombardment on the surface of growing film is one of the major parameters that control the atom mobility on the flirt... Diamondlike carbon (DLC) films were deposited via magnetron sputtering process. The energetic ion hombardment on the surface of growing film is one of the major parameters that control the atom mobility on the flirt1 surface and further the physical and chemical characteristics of the films. In this study, the energy of carbon ions was monitored by changing sputtering powerdensity, and its effect on the electrochemical performance of the films was investigated. For the deposition at a higher sputtering power density, a higher sp^3 content in the DLC films was achieved with denser structure and increased film-substrate adhesion. The impedance at the interface of Si substrate/sulfufic acid solution was significantly enhanced, and at the same time higher film resistance, lower capacitance, higher breakdown potential and longer breakdown time were observed, which were related to the significant sp^3 content of the DLC films. 展开更多
关键词 DLC薄膜 钻石形碳膜 磁控管溅射沉积 电化学特性 薄膜生长
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