采用常规射频等离子体增强化学气相沉积方法,以高氢稀释的Si H4为源气体和以PH3为掺杂剂,制备了磷掺杂的氢化纳米晶硅薄膜。结果表明,薄膜的生长速率随PH3/Si H4流量比（Cp）增加而显著减小。Raman谱的研究证实,随Cp增加,薄膜的晶化率...采用常规射频等离子体增强化学气相沉积方法,以高氢稀释的Si H4为源气体和以PH3为掺杂剂,制备了磷掺杂的氢化纳米晶硅薄膜。结果表明,薄膜的生长速率随PH3/Si H4流量比（Cp）增加而显著减小。Raman谱的研究证实,随Cp增加,薄膜的晶化率经历了先增大后减小的过程,当Cp=1.0%,晶化率达到最大值45.9%。傅里叶变换红外吸收谱测量结果显示,薄膜中的H含量在Cp=2.0%时达到最低值9.5%。光学测量结果表明,本征和掺P的氢化纳米晶硅薄膜在可见光谱范围呈现出良好的光吸收特性,在0.8~3.0 e V范围内,nc-Si（P）∶H薄膜的吸收系数显著大于c-Si。和α-Si∶H薄膜相比,虽然短波范围的吸收系数较低,但是在hν〈1.7 e V区域,nc-Si（P）∶H薄膜的吸收系数要高两到三个量级,显示出优良的红光响应。电学测量表明,适当掺P会显著提高氢化纳米晶硅薄膜的暗电导率,当Cp=0.5%时,薄膜的暗电导率可达5.4 S·cm-1。展开更多
Hydrogenated microcrystalline silicon(μc-Si:H)films were prepared on glass and silicon substrates by radio frequency magnetron sputtering at 100°C using a mixture of argon(Ar)and hydrogen(H2)gasses as precursor ...Hydrogenated microcrystalline silicon(μc-Si:H)films were prepared on glass and silicon substrates by radio frequency magnetron sputtering at 100°C using a mixture of argon(Ar)and hydrogen(H2)gasses as precursor gas.The effects of the ratio of hydrogen flow(H2/(Ar+H2)%)on the microstructure were evaluated.Results show that the microstructure,bonding structure,and surface morphology of theμc-Si:H films can be tailored based on the ratio of hydrogen flow.An amorphous to crystalline phase transition occurred when the ratio of hydrogen flow increased up to 50%.The crystallinity increased and tended to stabilize with the increase in ratio of hydrogen flow from 40%to 70%.The surface roughness of thin films increased,and total hydrogen content decreased as the ratio of hydrogen flow increased.Allμc-Si:H films have a preferred(111)orientation,independent of the ratio of hydrogen flow.And theμc-Si:H films had a dense structure,which shows their excellent resistance to post-oxidation.展开更多
文摘采用常规射频等离子体增强化学气相沉积方法,以高氢稀释的Si H4为源气体和以PH3为掺杂剂,制备了磷掺杂的氢化纳米晶硅薄膜。结果表明,薄膜的生长速率随PH3/Si H4流量比（Cp）增加而显著减小。Raman谱的研究证实,随Cp增加,薄膜的晶化率经历了先增大后减小的过程,当Cp=1.0%,晶化率达到最大值45.9%。傅里叶变换红外吸收谱测量结果显示,薄膜中的H含量在Cp=2.0%时达到最低值9.5%。光学测量结果表明,本征和掺P的氢化纳米晶硅薄膜在可见光谱范围呈现出良好的光吸收特性,在0.8~3.0 e V范围内,nc-Si（P）∶H薄膜的吸收系数显著大于c-Si。和α-Si∶H薄膜相比,虽然短波范围的吸收系数较低,但是在hν〈1.7 e V区域,nc-Si（P）∶H薄膜的吸收系数要高两到三个量级,显示出优良的红光响应。电学测量表明,适当掺P会显著提高氢化纳米晶硅薄膜的暗电导率,当Cp=0.5%时,薄膜的暗电导率可达5.4 S·cm-1。
基金Projects(51505050,51805063) supported by the National Natural Science Foundation of China for Young ScholarsProjects(KJ1500942,KJQN201801134) supported by the Scientific and Technological Research Program of Chongqing Education Commission of ChinaProjects(cstc2017jcyjAX0075,cstc2015jcyj A50033) supported by the Chongqing Research Program of Basic Research and Frontier Technology,China
文摘Hydrogenated microcrystalline silicon(μc-Si:H)films were prepared on glass and silicon substrates by radio frequency magnetron sputtering at 100°C using a mixture of argon(Ar)and hydrogen(H2)gasses as precursor gas.The effects of the ratio of hydrogen flow(H2/(Ar+H2)%)on the microstructure were evaluated.Results show that the microstructure,bonding structure,and surface morphology of theμc-Si:H films can be tailored based on the ratio of hydrogen flow.An amorphous to crystalline phase transition occurred when the ratio of hydrogen flow increased up to 50%.The crystallinity increased and tended to stabilize with the increase in ratio of hydrogen flow from 40%to 70%.The surface roughness of thin films increased,and total hydrogen content decreased as the ratio of hydrogen flow increased.Allμc-Si:H films have a preferred(111)orientation,independent of the ratio of hydrogen flow.And theμc-Si:H films had a dense structure,which shows their excellent resistance to post-oxidation.
