High-voltage sodium-ion batteries(SIBs)are emerging as promising candidates for large-scale energy storage systems due to their abundant sodium source and high energy density.However,the instability of the electrode e...High-voltage sodium-ion batteries(SIBs)are emerging as promising candidates for large-scale energy storage systems due to their abundant sodium source and high energy density.However,the instability of the electrode electrolyte interphase remains a critical barrier to the potential use of high-voltage SIBs.Herein,sodium difluorophosphate(NaDFP)and fluoroethylene carbonate(FEC)serve as functional electrolyte additives to stabilize the interface of the high-voltage cathode.The oxidative competition between FEC and NaDFP facilitates the robust formation of the cathode-electrolyte interface(CEI)layer,enriched with inorganic components such as NaF/NaPO_(x)F_(y).The highly conductive NaF/NaPO_(x)F_(y)and inorganics provide fast ion transport pathways and mechanical strength,thereby mitigating the decomposition of carbonates and NaPF_(6).The half-cell equipped with BE 2 F+0.5 DFP demonstrates 93.9%capacity retention at 4.3 V across 600 cycles,showcasing excellent cycling capability.Full HC||NVOPF cells exhibit sustained performance with 91.69%capacity retention and a capacity of 91.57 mA·h/g over 1000 cycles at a 5 C rate.This study is poised to garner increased scholarly interest in the domain of rational electrolyte formulation for practical applications.展开更多
With the high-quality development of urban buildings,higher requirements are come up with for lateral bearing capacity of laterally loaded piles.Consequently,a more accurate analysis to predict the lateral response of...With the high-quality development of urban buildings,higher requirements are come up with for lateral bearing capacity of laterally loaded piles.Consequently,a more accurate analysis to predict the lateral response of the pile within an allowable displacement is an important issue.However,the current p-y curve methods cannot fully take into account the pile-soil interaction,which will lead to a large calculation difference.In this paper,a new analytical p-y curve is established and a finite difference method for determining the lateral response of pile is proposed,which can consider the separation effect of pile-soil interface and the coefficient of circumferential friction resistance.In particular,an analytical expression is developed to determine the compressive soil pressure by dividing the compressive soil pressure into two parts:initial compressive soil pressure and increment of compressive soil pressure.In addition,the relationship between compressive soil pressure and horizontal displacement of the pile is established based on the reasonable assumption.The correctness of the proposed method is verified through four examples.Based on the verified method,a parametric analysis is also conducted to investigate the influences of factors on lateral response of the pile,including internal friction angle,pile length and elastic modulus of pile.展开更多
The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logar...The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logarithm of illumination intensity under usual illumination. There are two critical values of the interface state density(D_(it)) for the open-circuit voltage(V_(OC)), D_(it)^(crit,1) and D_(it)crit,2(a few 1010 cm^(-2)·e V^(-1)). V_(OC) decreases remarkably when D_(it) is higher than D_(it)^(crit,1). To achieve high V_(OC), the interface states should reduce down to a few 1010 cm^(-2)·e V^(-1). Due to the difference between the effective density of states in the conduction and valence band edges of c-Si, the open-circuit voltage of a-Si:H/c-Si heterojunction cells fabricated on n-type c-Si wafers is about 22 mV higher than that fabricated on p-type c-Si wafers at the same case. V_(OC) decreases with decreasing the a-Si:H doping concentration at low doping level since the electric field over the c-Si depletion region is reduced at low doping level. Therefore, the a-Si:H layer should be doped higher than a critical value of 5×10^(18) cm^(-3) to achieve high V_(OC).展开更多
基金Project(2023QNRC001)supported by the Young Elite Scientists Sponsorship Program by CAST,ChinaProject(51932011)supported by the National Natural Science Foundation of China+1 种基金Project(2023JJ10060)supported by the Natural Science Foundation of Hunan Province,ChinaProject(23A0003)supported by the Scientific Research Fund of Hunan Provincial Education Department,China。
文摘High-voltage sodium-ion batteries(SIBs)are emerging as promising candidates for large-scale energy storage systems due to their abundant sodium source and high energy density.However,the instability of the electrode electrolyte interphase remains a critical barrier to the potential use of high-voltage SIBs.Herein,sodium difluorophosphate(NaDFP)and fluoroethylene carbonate(FEC)serve as functional electrolyte additives to stabilize the interface of the high-voltage cathode.The oxidative competition between FEC and NaDFP facilitates the robust formation of the cathode-electrolyte interface(CEI)layer,enriched with inorganic components such as NaF/NaPO_(x)F_(y).The highly conductive NaF/NaPO_(x)F_(y)and inorganics provide fast ion transport pathways and mechanical strength,thereby mitigating the decomposition of carbonates and NaPF_(6).The half-cell equipped with BE 2 F+0.5 DFP demonstrates 93.9%capacity retention at 4.3 V across 600 cycles,showcasing excellent cycling capability.Full HC||NVOPF cells exhibit sustained performance with 91.69%capacity retention and a capacity of 91.57 mA·h/g over 1000 cycles at a 5 C rate.This study is poised to garner increased scholarly interest in the domain of rational electrolyte formulation for practical applications.
基金Project(52068004)supported by the National Natural Science Foundation of ChinaProject(2018JJA160134)supported by the Natural Science Foundation of Guangxi Province,ChinaProject(AB19245018)supported by Key Research Projects of Guangxi Province,China。
文摘With the high-quality development of urban buildings,higher requirements are come up with for lateral bearing capacity of laterally loaded piles.Consequently,a more accurate analysis to predict the lateral response of the pile within an allowable displacement is an important issue.However,the current p-y curve methods cannot fully take into account the pile-soil interaction,which will lead to a large calculation difference.In this paper,a new analytical p-y curve is established and a finite difference method for determining the lateral response of pile is proposed,which can consider the separation effect of pile-soil interface and the coefficient of circumferential friction resistance.In particular,an analytical expression is developed to determine the compressive soil pressure by dividing the compressive soil pressure into two parts:initial compressive soil pressure and increment of compressive soil pressure.In addition,the relationship between compressive soil pressure and horizontal displacement of the pile is established based on the reasonable assumption.The correctness of the proposed method is verified through four examples.Based on the verified method,a parametric analysis is also conducted to investigate the influences of factors on lateral response of the pile,including internal friction angle,pile length and elastic modulus of pile.
基金Project(11374094)supported by the National Natural Science Foundation of ChinaProject(2013HZX23)supported by Natural Science Foundation of Hunan University of Technology,ChinaProject(2015JJ3060)supported by Natural Science Foundation of Hunan Province of China
文摘The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logarithm of illumination intensity under usual illumination. There are two critical values of the interface state density(D_(it)) for the open-circuit voltage(V_(OC)), D_(it)^(crit,1) and D_(it)crit,2(a few 1010 cm^(-2)·e V^(-1)). V_(OC) decreases remarkably when D_(it) is higher than D_(it)^(crit,1). To achieve high V_(OC), the interface states should reduce down to a few 1010 cm^(-2)·e V^(-1). Due to the difference between the effective density of states in the conduction and valence band edges of c-Si, the open-circuit voltage of a-Si:H/c-Si heterojunction cells fabricated on n-type c-Si wafers is about 22 mV higher than that fabricated on p-type c-Si wafers at the same case. V_(OC) decreases with decreasing the a-Si:H doping concentration at low doping level since the electric field over the c-Si depletion region is reduced at low doping level. Therefore, the a-Si:H layer should be doped higher than a critical value of 5×10^(18) cm^(-3) to achieve high V_(OC).
