对P型基底均匀掺杂的情况下电子轰击有源像素传感器(EBAPS)的电荷收集效率进行了理论模拟研究,依据低能电子与固体的相互作用模型结合Monte-Carlo计算方法模拟了光电子入射到死层和倍增层中的运动轨迹,并分析了经过死层后的能量损失率...对P型基底均匀掺杂的情况下电子轰击有源像素传感器(EBAPS)的电荷收集效率进行了理论模拟研究,依据低能电子与固体的相互作用模型结合Monte-Carlo计算方法模拟了光电子入射到死层和倍增层中的运动轨迹,并分析了经过死层后的能量损失率所受影响因素;依据半导体理论研究了P型基底掺杂浓度、膜厚、入射电子能量对电荷收集效率的影响因素。最终获得的电荷收集效率理论模拟结果与已报道的(4 ke V,均匀掺杂的EPAPS)实测的结果较为相符,表明此文的模拟结果可以为高增益的EBAPS的制作提供理论指导。展开更多
The time and efficiency of charge collection are the key factors of monolithic active pixel sensor devices for minimum ionizing particles tracking detection.In this paper,3D models of pixels with different resistivity...The time and efficiency of charge collection are the key factors of monolithic active pixel sensor devices for minimum ionizing particles tracking detection.In this paper,3D models of pixels with different resistivity epitaxial layers(epi-layers) are built and simulated using Synopsys-Sentaurus.The basic characteristics of detectors are evaluated,including electric potential,electric field,and depleted region.Results indicate that the high resistivity (HR) epi-layer is a better choice.Further,simulation results show that the key collection performance is significantly improved owing to a wider and stronger electric field in the N type HR epi-layer.展开更多
文摘对P型基底均匀掺杂的情况下电子轰击有源像素传感器(EBAPS)的电荷收集效率进行了理论模拟研究,依据低能电子与固体的相互作用模型结合Monte-Carlo计算方法模拟了光电子入射到死层和倍增层中的运动轨迹,并分析了经过死层后的能量损失率所受影响因素;依据半导体理论研究了P型基底掺杂浓度、膜厚、入射电子能量对电荷收集效率的影响因素。最终获得的电荷收集效率理论模拟结果与已报道的(4 ke V,均匀掺杂的EPAPS)实测的结果较为相符,表明此文的模拟结果可以为高增益的EBAPS的制作提供理论指导。
基金supported by the France-China Particle Physics Laboratory(FCPPL)the China Scholarship Council(CSC)grant.
文摘The time and efficiency of charge collection are the key factors of monolithic active pixel sensor devices for minimum ionizing particles tracking detection.In this paper,3D models of pixels with different resistivity epitaxial layers(epi-layers) are built and simulated using Synopsys-Sentaurus.The basic characteristics of detectors are evaluated,including electric potential,electric field,and depleted region.Results indicate that the high resistivity (HR) epi-layer is a better choice.Further,simulation results show that the key collection performance is significantly improved owing to a wider and stronger electric field in the N type HR epi-layer.
