针对采用Hammerstein模型描述电磁脉冲效应时模型参数确定困难的问题,提出一种基于优化Hammerstein模型的非线性电磁脉冲效应建模仿真方法。该方法利用高阶累积量求解模型线性延迟阶数,采用赤池信息准则(Akaike Information Criterion,A...针对采用Hammerstein模型描述电磁脉冲效应时模型参数确定困难的问题,提出一种基于优化Hammerstein模型的非线性电磁脉冲效应建模仿真方法。该方法利用高阶累积量求解模型线性延迟阶数,采用赤池信息准则(Akaike Information Criterion,AIC)优化模型非线性阶次,两者共同确定出一个参数最少、精度较高的最优模型,并以瞬态抑制器的电磁脉冲效应建模为例验证了该方法。展开更多
The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with ...The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection circuit.This paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP signals.Based on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the device.At the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse width.The results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the circuit.In addition,pulse signals with different attributes will change the damage threshold of the circuit.These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.展开更多
经典随机耦合模型在对电子设备的电磁脉冲效应进行预测时,边界条件设置在无穷远处,存在短迹线效应问题.采用设置辐射阻抗短迹线调制系数的方法,建立了二端口波混沌腔体短迹线随机耦合模型(Short-Orbit Random Coupling Model,SORCM),统...经典随机耦合模型在对电子设备的电磁脉冲效应进行预测时,边界条件设置在无穷远处,存在短迹线效应问题.采用设置辐射阻抗短迹线调制系数的方法,建立了二端口波混沌腔体短迹线随机耦合模型(Short-Orbit Random Coupling Model,SORCM),统计分析了目标点处感应电压的均方根误差随短迹线最大长度的变化关系.在不同的频段范围内,将SORCM计算结果的统计特性和实验结果进行了对比分析,验证了所建立模型的正确性.和经典随机耦合模型相比,SORCM的计算结果更加接近实测结果,可用于复杂电子设备电磁脉冲效应的预测和分析.展开更多
文摘针对采用Hammerstein模型描述电磁脉冲效应时模型参数确定困难的问题,提出一种基于优化Hammerstein模型的非线性电磁脉冲效应建模仿真方法。该方法利用高阶累积量求解模型线性延迟阶数,采用赤池信息准则(Akaike Information Criterion,AIC)优化模型非线性阶次,两者共同确定出一个参数最少、精度较高的最优模型,并以瞬态抑制器的电磁脉冲效应建模为例验证了该方法。
基金National Natural Science Foundation of China(61974116)。
文摘The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection circuit.This paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP signals.Based on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the device.At the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse width.The results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the circuit.In addition,pulse signals with different attributes will change the damage threshold of the circuit.These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.
文摘经典随机耦合模型在对电子设备的电磁脉冲效应进行预测时,边界条件设置在无穷远处,存在短迹线效应问题.采用设置辐射阻抗短迹线调制系数的方法,建立了二端口波混沌腔体短迹线随机耦合模型(Short-Orbit Random Coupling Model,SORCM),统计分析了目标点处感应电压的均方根误差随短迹线最大长度的变化关系.在不同的频段范围内,将SORCM计算结果的统计特性和实验结果进行了对比分析,验证了所建立模型的正确性.和经典随机耦合模型相比,SORCM的计算结果更加接近实测结果,可用于复杂电子设备电磁脉冲效应的预测和分析.
