GaN高电子迁移率晶体管(HEMT)器件受制于陷阱效应,建立准确的非线性模型非常困难。介绍了表面势物理基高电子迁移率高级电路模型(ASM-HEMT),分析了标准ASM-HEMT模型在表征陷阱效应方面的不足,进而建立了新的陷阱模型电路拓扑及模型方程...GaN高电子迁移率晶体管(HEMT)器件受制于陷阱效应,建立准确的非线性模型非常困难。介绍了表面势物理基高电子迁移率高级电路模型(ASM-HEMT),分析了标准ASM-HEMT模型在表征陷阱效应方面的不足,进而建立了新的陷阱模型电路拓扑及模型方程,新陷阱模型可以更好地表征器件陷阱俘获和释放电子的不对称性。基于0.25μm GaN HEMT器件,进行了脉冲I-V、多偏置S参数、负载牵引仿真及测试,并对新模型进行参数提取和建模。经过对比仿真和测试结果发现,新模型的仿真结果与实测结果比标准ASM-HEMT模型更加吻合,说明新模型表征陷阱效应更加准确,提升了模型的准确性,进而提高GaN HEMT功率放大器设计仿真的准确性。展开更多
With the analysis of experiment and theory on GaN HEMT devices under DC sweep,an improved model for kink effect based on advanced SPICE model for high electron mobility transistors(ASM-HEMT)is pro⁃posed,considering th...With the analysis of experiment and theory on GaN HEMT devices under DC sweep,an improved model for kink effect based on advanced SPICE model for high electron mobility transistors(ASM-HEMT)is pro⁃posed,considering the relationship between the drain/gate-source voltage and kink effect.The improved model can not only accurately describe the trend of the drain-source current with the current collapse and kink effect,but also precisely fit different values of drain-source voltages at which the kink effect occurs under different gatesource voltages.Furthermore,it well characterizes the DC characteristics of GaN devices in the full operating range,with the fitting error less than 3%.To further verify the accuracy and convergence of the improved model,a load-pull system is built in ADS.The simulated result shows that although both the original ASM-HEMT and the improved model predict the output power for the maximum power matching of GaN devices well,the im⁃proved model predicts the power-added efficiency for the maximum efficiency matching more accurately,with 4%improved.展开更多
文摘GaN高电子迁移率晶体管(HEMT)器件受制于陷阱效应,建立准确的非线性模型非常困难。介绍了表面势物理基高电子迁移率高级电路模型(ASM-HEMT),分析了标准ASM-HEMT模型在表征陷阱效应方面的不足,进而建立了新的陷阱模型电路拓扑及模型方程,新陷阱模型可以更好地表征器件陷阱俘获和释放电子的不对称性。基于0.25μm GaN HEMT器件,进行了脉冲I-V、多偏置S参数、负载牵引仿真及测试,并对新模型进行参数提取和建模。经过对比仿真和测试结果发现,新模型的仿真结果与实测结果比标准ASM-HEMT模型更加吻合,说明新模型表征陷阱效应更加准确,提升了模型的准确性,进而提高GaN HEMT功率放大器设计仿真的准确性。
基金Supported by the National Key R&D Program of China(2022YFF0707800,2022YFF0707801)Primary Research&Development Plan of Jiangsu Province(BE2022070,BE2022070-2)。
文摘With the analysis of experiment and theory on GaN HEMT devices under DC sweep,an improved model for kink effect based on advanced SPICE model for high electron mobility transistors(ASM-HEMT)is pro⁃posed,considering the relationship between the drain/gate-source voltage and kink effect.The improved model can not only accurately describe the trend of the drain-source current with the current collapse and kink effect,but also precisely fit different values of drain-source voltages at which the kink effect occurs under different gatesource voltages.Furthermore,it well characterizes the DC characteristics of GaN devices in the full operating range,with the fitting error less than 3%.To further verify the accuracy and convergence of the improved model,a load-pull system is built in ADS.The simulated result shows that although both the original ASM-HEMT and the improved model predict the output power for the maximum power matching of GaN devices well,the im⁃proved model predicts the power-added efficiency for the maximum efficiency matching more accurately,with 4%improved.
