Using the negative eigenvalue theory and the infinite order perturbation theory, a new method was developed to solve the eigenvectors of disordered systems. The result shows that eigenvectors change from the extended ...Using the negative eigenvalue theory and the infinite order perturbation theory, a new method was developed to solve the eigenvectors of disordered systems. The result shows that eigenvectors change from the extended state to the localized state with the increase of the site points and the disordered degree of the system. When electric field is exerted, the electrons transfer from one localized state to another one. The conductivity is induced by the electron transfer. The authors derive the formula of electron conductivity and find the electron hops between localized states whose energies are close to each other, whereas localized positions differ from each other greatly. At low temperature the disordered system has the character of the negative differential dependence of resistivity and temperature.展开更多
Indium doped cadmium sulfide thin films （CdS：In） were produced by the spray pyrolysis technique on glass substrates. AC measurements were used to investigate the electrical properties of the films depending on Bric...Indium doped cadmium sulfide thin films （CdS：In） were produced by the spray pyrolysis technique on glass substrates. AC measurements were used to investigate the electrical properties of the films depending on Brick-layer model for polycrystalline materials. The measurements were performed at room temperature in the dark and room light in the frequency range from 20 Hz to 1 MHz using coplanar indium electrodes. The data were analyzed by using Bode plots for the impedance Z and dielectric loss tang with frequencyf It is found that the impedance has no dependence on frequency in the low frequency region but has 1/f dependence in the high frequency region. One dielectric loss peak is obtained, which means the presence of a single relaxation time, and hence the films are modeled by just one RC circuit which represents the grains. This means that there is just one conduction mechanism that is responsible for the conduction in the bulk, due to electronic transport through the grains. Real values of the impedance in the low frequency region and relaxation times for treated and as-deposited fihns were estimated.展开更多
基金National Natural Science Foundation of China(51762024,51562014,51862016 and 51602135)Natural Science Foundation of Jiangxi province(20171BAB216012)Science Foundation of Jiangxi Provincial Education Department of China(GJJ170789,GJJ170804,GJJ180718 and GJJ170794).
基金National Natural Science Foundation of China(52062018,51762024,51862016)Natural Science Foundation of Jiangxi Province(20192BAB20600,20192BAB212002)Foundation of Jiangxi Provincial Education Department(GJJ190712,GJJ201331,GJJ190699)。
文摘Using the negative eigenvalue theory and the infinite order perturbation theory, a new method was developed to solve the eigenvectors of disordered systems. The result shows that eigenvectors change from the extended state to the localized state with the increase of the site points and the disordered degree of the system. When electric field is exerted, the electrons transfer from one localized state to another one. The conductivity is induced by the electron transfer. The authors derive the formula of electron conductivity and find the electron hops between localized states whose energies are close to each other, whereas localized positions differ from each other greatly. At low temperature the disordered system has the character of the negative differential dependence of resistivity and temperature.
文摘Indium doped cadmium sulfide thin films （CdS：In） were produced by the spray pyrolysis technique on glass substrates. AC measurements were used to investigate the electrical properties of the films depending on Brick-layer model for polycrystalline materials. The measurements were performed at room temperature in the dark and room light in the frequency range from 20 Hz to 1 MHz using coplanar indium electrodes. The data were analyzed by using Bode plots for the impedance Z and dielectric loss tang with frequencyf It is found that the impedance has no dependence on frequency in the low frequency region but has 1/f dependence in the high frequency region. One dielectric loss peak is obtained, which means the presence of a single relaxation time, and hence the films are modeled by just one RC circuit which represents the grains. This means that there is just one conduction mechanism that is responsible for the conduction in the bulk, due to electronic transport through the grains. Real values of the impedance in the low frequency region and relaxation times for treated and as-deposited fihns were estimated.
