为了准确求解交替方向隐式时域有限差分(Alternating Direction Implicit Finite-Difference Time-Domain,ADI-FDTD)方法实现理想电导体边界和理想磁导体边界的待求场分量系数,通过在获得该系数前应用理想导体边界条件,推导出了相应的...为了准确求解交替方向隐式时域有限差分(Alternating Direction Implicit Finite-Difference Time-Domain,ADI-FDTD)方法实现理想电导体边界和理想磁导体边界的待求场分量系数,通过在获得该系数前应用理想导体边界条件,推导出了相应的修正系数.计算了单个金属立方体和对称的两个金属立方体的双站雷达散射截面.结果表明:理想导体边界作为理想导体表面,采用修正系数的计算结果与时域有限差分(Finite-Difference Time-Domain,FDTD)方法计算结果更为吻合;理想导体边界作为截断计算空间对称面,采用修正系数的计算结果与ADI-FDTD方法计算结果相同,与理论推导结论一致.展开更多
In this paper a fully parametrized finite element simulation model of the stator bar end is created using the COMSOL Multiphysics.The model allows conducting the comparison of different corona protection structures’d...In this paper a fully parametrized finite element simulation model of the stator bar end is created using the COMSOL Multiphysics.The model allows conducting the comparison of different corona protection structures’design,various materials properties,and finally optimizing the corona protection system.Several samples of SiC based nonlinear conductivity materials for corona protection were fabricated in laboratory and then investigated.The conductivity dependencies on electric field(0.05 to 1 kV/mm)and temperature(20 to 155℃)were measured.By comparing the heat-resistant grades of the corona protection material and the insulating material,the maximum working temperature of the corona protection material corresponds to the heat-resistant grade F of the insulating material.As the temperature increases,the nonlinear characteristics of the corona protection material in the experiment decrease dramatically,reducing the heat-resistant grade of the corona protection material.The decrease in the nonlinear characteristics of the corona protection material at the maximum operating temperature causes the maximum electric field strength at the end of the HV rotating machines end corona protection(ECP)exceeding the corona discharge electric field strength,resulting in corona phenomenon.展开更多
This paper delves into the theoretical mechanisms of the electronic structure and optical properties of aluminum-based semiconductors(AlX,X=N,P,As,Sb)and indium-based semiconductors(InX,X=N,P,As,Sb)as potential materi...This paper delves into the theoretical mechanisms of the electronic structure and optical properties of aluminum-based semiconductors(AlX,X=N,P,As,Sb)and indium-based semiconductors(InX,X=N,P,As,Sb)as potential materials for optical devices.Band structure calculations reveal that,except for InSb,all other compounds are direct bandgap semiconductors,with AlN exhibiting a bandgap of 3.245 eV.The valence band maximum of these eight compounds primarily stems from the p-orbitals of Al/In and X.In contrast,the conduction band minimum is influenced by all orbitals,with a predominant contribution from the p-orbitals.The static dielectric constant increased with the expansion of the unit cell volume.Compared to AlX and InX with larger X atoms,AlN and InN showed broader absorption spectra in the near-ultraviolet region and higher photoelectric conductance.Regarding mechanical properties,AlN and InN displayed greater shear and bulk modulus than the other compounds.Moreover,among these eight crystal types,a higher modulus was associated with a lower light loss function value,indicating that AlN and InN have superior transmission efficiency and a wider spectral range in optoelectronic material applications.展开更多
Based on Peltier effect,Bi_(2)Te_(3)-based alloy is widely used in commercial solid-state refrigeration at room temperature.The mainstream strategies for enhancing room-temperature thermoelectric performance in Bi_(2)...Based on Peltier effect,Bi_(2)Te_(3)-based alloy is widely used in commercial solid-state refrigeration at room temperature.The mainstream strategies for enhancing room-temperature thermoelectric performance in Bi_(2)Te_(3)focus on band and microstructure engineering.However,a clear understanding of the modulation of band structure and scattering through such engineering remains still challenging,because the minority carriers compensate partially the overall transport properties for the narrow-gap Bi_(2)Te_(3)at room temperature(known as the bipolar effect).The purpose of this work is to model the transport properties near and far away from the bipolar effect region for Bi_(2)Te_(3)-based thermoelectric material by a two-band model taking contributions of both majority and minority carriers into account.This is endowed by shifting the Fermi level from the conduction band to the valence band during the modeling.A large amount of data of Bi_(2)Te_(3)-based materials is collected from various studies for the comparison between experimental and predicted properties.The fundamental parameters,such as the density of states effective masses and deformation potential coefficients,of Bi_(2)Te_(3)-based materials are quantified.The analysis can help find out the impact factors(e.g.the mobility ratio between conduction and valence bands)for the improvement of thermoelectric properties for Bi_(2)Te_(3)-based alloys.This work provides a convenient tool for analyzing and predicting the transport performance even in the presence of bipolar effect,which can facilitate the development of the narrow-gap thermoelectric semiconductors.展开更多
All-solid-state lithium-ion batteries(LIBs)using ceramic electrolytes are considered the ideal form of rechargeable batteries due to their high energy density and safety.However,in the pursuit of all-solid-state LIBs,...All-solid-state lithium-ion batteries(LIBs)using ceramic electrolytes are considered the ideal form of rechargeable batteries due to their high energy density and safety.However,in the pursuit of all-solid-state LIBs,the issue of lithium resource availability is selectively overlooked.Considering that the amount of lithium required for all-solidstate LIBs is not sustainable with current lithium resources,another system that also offers the dual advantages of high energy density and safetydall-solid-state sodium-ion batteries(SIBs)dholds significant sustainable advantages and is likely to be the strong contender in the competition for developing next-generation high-energy-density batteries.This article briefly introduces the research status of all-solid-state SIBs,explains the sources of their advantages,and discusses potential approaches to the development of solid sodium-ion conductors,aiming to spark the interest of researchers and attract more attention to the field of all-solid-state SIBs.展开更多
With increasing demand on energy density of lithium-ion battery,wide electrochemical window and safety performance are the crucial request for next generation electrolyte.Gel-electrolyte as a pioneer for electrolyte s...With increasing demand on energy density of lithium-ion battery,wide electrochemical window and safety performance are the crucial request for next generation electrolyte.Gel-electrolyte as a pioneer for electrolyte solidization development aims to solve the safety and electrochemical window problems.However,low ionic conductivity and poor physical performance prohibit its further application.Herein,a fast-ionic conductor(Li_(2.64)(Sc_(0.9)Ti_(0.1))_(2)(PO_(4))_(3))(LSTP)was added into poly(vinylidene fluoride-co-hexafluoropropylene)(PVDF-HFP)base gel-electrolyte to enhance mechanical properties and ionic conductivity.Evidences reveal that LSTP was able to weaken interforce between polymer chains,which increased the ionic conductibility and decreased interface resistance during the cycling significantly.The obtained LiFePO_(4)/hybrid gel-electrolyte/Li-metal coin cell exhibited excellent rate capacity(145 mA·h/g at 1C,95 mA·h/g at 3C,28℃)which presented a potential that can be comparable with commercialized liquid electrolyte system.展开更多
With the continuous development of electronic industry, people’s demand for semiconductor materials is also increasing. How to prepare semiconductor materials with low cost, low energy consumption and high yield has ...With the continuous development of electronic industry, people’s demand for semiconductor materials is also increasing. How to prepare semiconductor materials with low cost, low energy consumption and high yield has become one of the hot spots of research. ZnTe is commonly used in the semiconductor industry due to its superior optoelectronic properties. Electrochemical deposition is one of the most frequently used methods to prepare ZnTe thin films. However,the traditional electrochemical deposition technology has many shortcomings, such as slow deposition rate and poor film quality. These hinder the large-scale promotion of zinc telluride electrochemical deposition technology. To solve the problems encountered in the preparation of semiconductor thin films by conventional electrochemical deposition, and based on the photoconductive properties of semiconductor materials themselves, the basic principles of photoelectrochemistry of semiconductor electrodes, and some characteristics of the electrochemical deposition process of semiconductor materials, the use of photoelectrochemical deposition method for the preparation of semiconductor materials was proposed. Firstly, the electrochemical behaviors(electrode reactions, nucleation growth and charge transport process) of the ZnTe electrodeposition under illumination and dark state conditions were studied. Then, the potentiostatic deposition of ZnTe was carried out under light and dark conditions. The phase structure, morphology and composition of the sediments were studied using X-ray diffractometer, scanning electron microscope and other testing methods. Finally, the photoelectrochemical deposition mechanisms were analyzed. Compared with conventional electrochemical deposition, photoelectrochemical deposition increases the current density during deposition and reduces the charge transfer impedance during ZnTe deposition process. In addition, since light illumination promotes the deposition of the difficult-to-deposit element Zn, the component ratio of ZnTe thin films prepared by photoelectrochemical deposition is closer to 1:1, making it a viable and reliable approach for ZnTe production.展开更多
In this study,magneto-hydrodynamics (MHD) mixed convection effects of Al2O3-water nanofluid flow over a backward-facing step were investigated numerically for various electrical conductivity models of nanofluids.A uni...In this study,magneto-hydrodynamics (MHD) mixed convection effects of Al2O3-water nanofluid flow over a backward-facing step were investigated numerically for various electrical conductivity models of nanofluids.A uniform external magnetic field was applied to the flow and strength of magnetic field was varied with different values of dimensionless parameter Hartmann number (Ha=0,10,20,30,40).Three different electrical conductivity models were used to see the effects of MHD nanofluid flow.Besides,five different inclination angles between 0°-90° is used for the external magnetic field.The problem geometry is a backward-facing step which is used in many engineering applications where flow separation and reattachment phenomenon occurs.Mixed type convective heat transfer of backward-facing step was examined with various values of Richardson number (Ri=0.01,0.1,1,10) and four different nanoparticle volume fractions (Ф=0.01,0.015,0.020,0.025) considering different electrical conductivity models.Finite element method via commercial code COMSOL was used for computations.Results indicate that the addition of nanoparticles enhanced heat transfer significantly.Also increasing magnetic field strength and inclination angle increased heat transfer rate.Effects of different electrical conductivity models were also investigated and it was observed that they have significant effects on the fluid flow and heat transfer characteristics in the presence of magnetic field.展开更多
A 2.7-4.0 GHz dual-mode auto frequency calibration(AFC) fast locking PLL was designed for navigation system on chip(SoC). The SoC was composed of one radio frequency(RF) receiver, one baseband and several system contr...A 2.7-4.0 GHz dual-mode auto frequency calibration(AFC) fast locking PLL was designed for navigation system on chip(SoC). The SoC was composed of one radio frequency(RF) receiver, one baseband and several system control parts. In the proposed AFC block, both analog and digital modes were designed to complete the AFC process. In analog mode, the analog part sampled and detected the charge pump output tuning voltage, which would give the indicator to digital part to adjust the voltage control oscillator(VCO) capacitor bank. In digital mode, the digital part counted the phase lock loop(PLL) divided clock to judge whether VCO frequency was fast or slow. The analog and digital modes completed the auto frequency calibration function independently by internal switch. By designing a special switching algorithm, the switch of the digital and analog mode could be realized anytime during the lock and unlock detecting process for faster and more stable locking. This chip is fabricated in 0.13 μm RF complementary metal oxide semiconductor(CMOS) process, and the VCO supports the frequency range from 2.7 to 4.0 GHz. Tested 3.96 GHz frequency phase noise is -90 d Bc/Hz@100 k Hz frequency offset and -120 d Bc/Hz@1 MHz frequency offset. By using the analog mode in lock detection and digital mode in unlock detection, tested AFC time is less than 9 μs and the total PLL lock time is less than 19 μs. The SoC acquisition and tracking sensitivity are about-142 d Bm and-155 d Bm, respectively. The area of the proposed PLL is 0.35 mm^2 and the total SoC area is about 9.6 mm^2.展开更多
A new dimmer using a mental-oxide-semiconductor field-effect transistor (MOSFET) for alternating-current (AC) directly driven light-emitting-diode (LED) lamp was presented. The control method of proposed dimmer is pul...A new dimmer using a mental-oxide-semiconductor field-effect transistor (MOSFET) for alternating-current (AC) directly driven light-emitting-diode (LED) lamp was presented. The control method of proposed dimmer is pulse width control (PWM) method. Compared with the conventional phase-controlled dimmer, the proposed PWM dimmer can produce sine wave and did not cause harmonics problem. Furthermore, the proposed control method did not amplify the light flicker due to the independence of input voltage. Therefore, the PWM dimmer can be used as the dimmer of the AC LED lamp instead of the conventional phase-controlled dimmer. The experimental result shows that the proposed PWM dimmer has good performances.展开更多
Abstract： PAN （Polyacrylonitrile）-based carbonaceous fibers were prepared at the heat treatment temperature （HTT） range of 650 to 900 ℃. The relationships among HTT, carbon content and volume resistivity of the ...Abstract： PAN （Polyacrylonitrile）-based carbonaceous fibers were prepared at the heat treatment temperature （HTT） range of 650 to 900 ℃. The relationships among HTT, carbon content and volume resistivity of the carbonaceous fibers were investigated. The carbonaceous fibers/PTFE （Polytetrafluoroethylene） antistatic coatings were prepared by the spraying technology and the effects of carbonaceous fibers and pigments on surface resistivity of the coatings were systematically discussed. Micrographs provide insight into the antistatic mechanism of the coating. The results show that carbon content of the carbonaceous fibers increases from 68.8% to 74.8% （mass fraction） and the volume resistivity decreases drastically from 1.94× 10^-3 to 8.27× 10 ^-2.cm. The surface resistivity of the antistatic coating is adjustable between 10^5 and 10^8Ω2 to fit the different antistatic materials. Static is dissipated by a conductive network of short fibers and the tunneling effect between the neighboring fibers and conductive pigments. Conductive pigments make the conductive network more perfect and improve the antistatic ability, but insulating pigments acting as barriers for the formation of conductive channel increases the surface resistivity of the coatings. The influence of pigments on the surface resistivity drops gradually with the decrease of the carbonaceous fibers volume resistivity.展开更多
Metal organic chemical vapor deposition(MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heati...Metal organic chemical vapor deposition(MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heating device and thermal control technology are needed for each new reactor design. By using resistance-wire heating MOCVD reaction chamber model, thermal analysis and structure optimization of the reactor were developed from the vertical position and the distance between coils of the resistance-wire heater. It is indicated that, within a certain range, the average temperature of the graphite susceptor varies linearly with the vertical distance of heater to susceptor, and with the changed distances between the coils; furthermore, single resistance-wire heater should be placed loosely in the internal and tightly in the external. The modulate accuracy of the temperature field approximately equals the change of the average temperature corresponding to the change of the coil position.展开更多
As dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased,the gate leakage becomes more and more prominent and has been one of the mo...As dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased,the gate leakage becomes more and more prominent and has been one of the most important limiting factors to MOSFET and circuits lifetime.Based on reliability theory and experiments,the direct tunneling current in lightly-doped drain (LDD) NMOSFET with 1.4 nm gate oxide fabricated by 90 nm complementary metal oxide semiconductor (CMOS) process was studied in depth.High-precision semiconductor parameter analyzer was used to conduct the tests.Law of variation of the direct tunneling (DT) current with channel length,channel width,measuring voltage,drain bias and reverse substrate bias was revealed.The results show that the change of the DT current obeys index law;there is a linear relationship between gate current and channel dimension;drain bias and substrate bias can reduce the gate current.展开更多
Many kinds of high temperature superconductor （HTS） power machines such as HTS cable, HTS fault current limitcr and HTS magnet are cooled by liquid nitrogen. The level of liquid nitrogen should be monitored and cont...Many kinds of high temperature superconductor （HTS） power machines such as HTS cable, HTS fault current limitcr and HTS magnet are cooled by liquid nitrogen. The level of liquid nitrogen should be monitored and controlled to ensure the thermal stability and the dielectric strength as well. To measure the level, capacitance method and differential pressure method are usually used. However, each method has installation difficulties and measurement errors for unsteady state operation with varying system pressure. A new liquid level meter using a 2G HTS conductor is described, which has similar structure with the liquid helium level meter with NbTi filament. The level meter is fabricated with a parallel connected heater, which helps the separation of the superconducting region and normal region, considering the critical temperature, large heat capacity of conductor and cooling characteristics. The level of liquid nitrogen can be obtained from the measured voltage signal along the 2G HTS conductor. Design, fabrication and test results of the new liquid nitrogen level meter are presented.展开更多
Interferograms of laser-induced epoxy fiber reinforced polymer plasmas are obtained through aMach-Zehnder interferometry system.An improved digital double-exposure Fourier method is applied to extractinitial wrapped p...Interferograms of laser-induced epoxy fiber reinforced polymer plasmas are obtained through aMach-Zehnder interferometry system.An improved digital double-exposure Fourier method is applied to extractinitial wrapped phases from interferograms,and then an improved phase unwrapping algorithm based on a maskand a branch-cut method is proposed to solve the problem of phase unwrapping.After the inverse Abel transfor-mation of the unwrapped phase,spatial distributions of the electron density of laser-induced epoxy fiber rein-forced polymer plasma at various delays are acquired.Results show that the measured electron density of theplasma is mainly distributed on the order of 10^18 cm^3.The experiment also indicates that the total amount oflaser plasma electrons changes slightly within the recorded time and the change of the electron density is approx-imately inversely proportional to the change of the plasma volume.展开更多
文摘In this paper a fully parametrized finite element simulation model of the stator bar end is created using the COMSOL Multiphysics.The model allows conducting the comparison of different corona protection structures’design,various materials properties,and finally optimizing the corona protection system.Several samples of SiC based nonlinear conductivity materials for corona protection were fabricated in laboratory and then investigated.The conductivity dependencies on electric field(0.05 to 1 kV/mm)and temperature(20 to 155℃)were measured.By comparing the heat-resistant grades of the corona protection material and the insulating material,the maximum working temperature of the corona protection material corresponds to the heat-resistant grade F of the insulating material.As the temperature increases,the nonlinear characteristics of the corona protection material in the experiment decrease dramatically,reducing the heat-resistant grade of the corona protection material.The decrease in the nonlinear characteristics of the corona protection material at the maximum operating temperature causes the maximum electric field strength at the end of the HV rotating machines end corona protection(ECP)exceeding the corona discharge electric field strength,resulting in corona phenomenon.
文摘This paper delves into the theoretical mechanisms of the electronic structure and optical properties of aluminum-based semiconductors(AlX,X=N,P,As,Sb)and indium-based semiconductors(InX,X=N,P,As,Sb)as potential materials for optical devices.Band structure calculations reveal that,except for InSb,all other compounds are direct bandgap semiconductors,with AlN exhibiting a bandgap of 3.245 eV.The valence band maximum of these eight compounds primarily stems from the p-orbitals of Al/In and X.In contrast,the conduction band minimum is influenced by all orbitals,with a predominant contribution from the p-orbitals.The static dielectric constant increased with the expansion of the unit cell volume.Compared to AlX and InX with larger X atoms,AlN and InN showed broader absorption spectra in the near-ultraviolet region and higher photoelectric conductance.Regarding mechanical properties,AlN and InN displayed greater shear and bulk modulus than the other compounds.Moreover,among these eight crystal types,a higher modulus was associated with a lower light loss function value,indicating that AlN and InN have superior transmission efficiency and a wider spectral range in optoelectronic material applications.
基金National Natural Science Foundation of China(T2125008,92263108,92163203,52102292,52003198)Shanghai Rising-Star Program(23QA1409300)Innovation Program of Shanghai Municipal Education Commission(2021-01-07-00-07-E00096)。
文摘Based on Peltier effect,Bi_(2)Te_(3)-based alloy is widely used in commercial solid-state refrigeration at room temperature.The mainstream strategies for enhancing room-temperature thermoelectric performance in Bi_(2)Te_(3)focus on band and microstructure engineering.However,a clear understanding of the modulation of band structure and scattering through such engineering remains still challenging,because the minority carriers compensate partially the overall transport properties for the narrow-gap Bi_(2)Te_(3)at room temperature(known as the bipolar effect).The purpose of this work is to model the transport properties near and far away from the bipolar effect region for Bi_(2)Te_(3)-based thermoelectric material by a two-band model taking contributions of both majority and minority carriers into account.This is endowed by shifting the Fermi level from the conduction band to the valence band during the modeling.A large amount of data of Bi_(2)Te_(3)-based materials is collected from various studies for the comparison between experimental and predicted properties.The fundamental parameters,such as the density of states effective masses and deformation potential coefficients,of Bi_(2)Te_(3)-based materials are quantified.The analysis can help find out the impact factors(e.g.the mobility ratio between conduction and valence bands)for the improvement of thermoelectric properties for Bi_(2)Te_(3)-based alloys.This work provides a convenient tool for analyzing and predicting the transport performance even in the presence of bipolar effect,which can facilitate the development of the narrow-gap thermoelectric semiconductors.
基金the support of the Grant-in-Aid for JSPS Research Fellow.
文摘All-solid-state lithium-ion batteries(LIBs)using ceramic electrolytes are considered the ideal form of rechargeable batteries due to their high energy density and safety.However,in the pursuit of all-solid-state LIBs,the issue of lithium resource availability is selectively overlooked.Considering that the amount of lithium required for all-solidstate LIBs is not sustainable with current lithium resources,another system that also offers the dual advantages of high energy density and safetydall-solid-state sodium-ion batteries(SIBs)dholds significant sustainable advantages and is likely to be the strong contender in the competition for developing next-generation high-energy-density batteries.This article briefly introduces the research status of all-solid-state SIBs,explains the sources of their advantages,and discusses potential approaches to the development of solid sodium-ion conductors,aiming to spark the interest of researchers and attract more attention to the field of all-solid-state SIBs.
基金Projects(51974368,51774333) supported by the National Natural Science Foundation of ChinaProject(2020JJ2048) supported by the Hunan Provincial Natural Science Foundation of China。
文摘With increasing demand on energy density of lithium-ion battery,wide electrochemical window and safety performance are the crucial request for next generation electrolyte.Gel-electrolyte as a pioneer for electrolyte solidization development aims to solve the safety and electrochemical window problems.However,low ionic conductivity and poor physical performance prohibit its further application.Herein,a fast-ionic conductor(Li_(2.64)(Sc_(0.9)Ti_(0.1))_(2)(PO_(4))_(3))(LSTP)was added into poly(vinylidene fluoride-co-hexafluoropropylene)(PVDF-HFP)base gel-electrolyte to enhance mechanical properties and ionic conductivity.Evidences reveal that LSTP was able to weaken interforce between polymer chains,which increased the ionic conductibility and decreased interface resistance during the cycling significantly.The obtained LiFePO_(4)/hybrid gel-electrolyte/Li-metal coin cell exhibited excellent rate capacity(145 mA·h/g at 1C,95 mA·h/g at 3C,28℃)which presented a potential that can be comparable with commercialized liquid electrolyte system.
基金Project(51774341) supported by the National Natural Science Foundation of ChinaProject(2018GK4001) supported by the Science and Technology Tackling and Transformation of Major Scientific and Technological Achievements Project of Hunan Province,China。
文摘With the continuous development of electronic industry, people’s demand for semiconductor materials is also increasing. How to prepare semiconductor materials with low cost, low energy consumption and high yield has become one of the hot spots of research. ZnTe is commonly used in the semiconductor industry due to its superior optoelectronic properties. Electrochemical deposition is one of the most frequently used methods to prepare ZnTe thin films. However,the traditional electrochemical deposition technology has many shortcomings, such as slow deposition rate and poor film quality. These hinder the large-scale promotion of zinc telluride electrochemical deposition technology. To solve the problems encountered in the preparation of semiconductor thin films by conventional electrochemical deposition, and based on the photoconductive properties of semiconductor materials themselves, the basic principles of photoelectrochemistry of semiconductor electrodes, and some characteristics of the electrochemical deposition process of semiconductor materials, the use of photoelectrochemical deposition method for the preparation of semiconductor materials was proposed. Firstly, the electrochemical behaviors(electrode reactions, nucleation growth and charge transport process) of the ZnTe electrodeposition under illumination and dark state conditions were studied. Then, the potentiostatic deposition of ZnTe was carried out under light and dark conditions. The phase structure, morphology and composition of the sediments were studied using X-ray diffractometer, scanning electron microscope and other testing methods. Finally, the photoelectrochemical deposition mechanisms were analyzed. Compared with conventional electrochemical deposition, photoelectrochemical deposition increases the current density during deposition and reduces the charge transfer impedance during ZnTe deposition process. In addition, since light illumination promotes the deposition of the difficult-to-deposit element Zn, the component ratio of ZnTe thin films prepared by photoelectrochemical deposition is closer to 1:1, making it a viable and reliable approach for ZnTe production.
文摘In this study,magneto-hydrodynamics (MHD) mixed convection effects of Al2O3-water nanofluid flow over a backward-facing step were investigated numerically for various electrical conductivity models of nanofluids.A uniform external magnetic field was applied to the flow and strength of magnetic field was varied with different values of dimensionless parameter Hartmann number (Ha=0,10,20,30,40).Three different electrical conductivity models were used to see the effects of MHD nanofluid flow.Besides,five different inclination angles between 0°-90° is used for the external magnetic field.The problem geometry is a backward-facing step which is used in many engineering applications where flow separation and reattachment phenomenon occurs.Mixed type convective heat transfer of backward-facing step was examined with various values of Richardson number (Ri=0.01,0.1,1,10) and four different nanoparticle volume fractions (Ф=0.01,0.015,0.020,0.025) considering different electrical conductivity models.Finite element method via commercial code COMSOL was used for computations.Results indicate that the addition of nanoparticles enhanced heat transfer significantly.Also increasing magnetic field strength and inclination angle increased heat transfer rate.Effects of different electrical conductivity models were also investigated and it was observed that they have significant effects on the fluid flow and heat transfer characteristics in the presence of magnetic field.
基金Project(2011912004)supported by the Major Program of the Economic & Information Commission Program of Guangdong Province,ChinaProjects(2011B010700065,2011A090200106)supported by the Major Program of the Department of Science and Technology of Guangdong Province,China
文摘A 2.7-4.0 GHz dual-mode auto frequency calibration(AFC) fast locking PLL was designed for navigation system on chip(SoC). The SoC was composed of one radio frequency(RF) receiver, one baseband and several system control parts. In the proposed AFC block, both analog and digital modes were designed to complete the AFC process. In analog mode, the analog part sampled and detected the charge pump output tuning voltage, which would give the indicator to digital part to adjust the voltage control oscillator(VCO) capacitor bank. In digital mode, the digital part counted the phase lock loop(PLL) divided clock to judge whether VCO frequency was fast or slow. The analog and digital modes completed the auto frequency calibration function independently by internal switch. By designing a special switching algorithm, the switch of the digital and analog mode could be realized anytime during the lock and unlock detecting process for faster and more stable locking. This chip is fabricated in 0.13 μm RF complementary metal oxide semiconductor(CMOS) process, and the VCO supports the frequency range from 2.7 to 4.0 GHz. Tested 3.96 GHz frequency phase noise is -90 d Bc/Hz@100 k Hz frequency offset and -120 d Bc/Hz@1 MHz frequency offset. By using the analog mode in lock detection and digital mode in unlock detection, tested AFC time is less than 9 μs and the total PLL lock time is less than 19 μs. The SoC acquisition and tracking sensitivity are about-142 d Bm and-155 d Bm, respectively. The area of the proposed PLL is 0.35 mm^2 and the total SoC area is about 9.6 mm^2.
文摘A new dimmer using a mental-oxide-semiconductor field-effect transistor (MOSFET) for alternating-current (AC) directly driven light-emitting-diode (LED) lamp was presented. The control method of proposed dimmer is pulse width control (PWM) method. Compared with the conventional phase-controlled dimmer, the proposed PWM dimmer can produce sine wave and did not cause harmonics problem. Furthermore, the proposed control method did not amplify the light flicker due to the independence of input voltage. Therefore, the PWM dimmer can be used as the dimmer of the AC LED lamp instead of the conventional phase-controlled dimmer. The experimental result shows that the proposed PWM dimmer has good performances.
基金Project(2011CB605601)supported by the National Basic Research Program(973 Program)of ChinaProject(50902088)supported by the National Natural Science Foundation of China+1 种基金Project(ZR2011EMM002)supported by the Natural Science Foundation in Shandong Province,ChinaProject(2009AA035301)supported by the National High Technology Research and Development Program(863 Program)of China
文摘Abstract： PAN （Polyacrylonitrile）-based carbonaceous fibers were prepared at the heat treatment temperature （HTT） range of 650 to 900 ℃. The relationships among HTT, carbon content and volume resistivity of the carbonaceous fibers were investigated. The carbonaceous fibers/PTFE （Polytetrafluoroethylene） antistatic coatings were prepared by the spraying technology and the effects of carbonaceous fibers and pigments on surface resistivity of the coatings were systematically discussed. Micrographs provide insight into the antistatic mechanism of the coating. The results show that carbon content of the carbonaceous fibers increases from 68.8% to 74.8% （mass fraction） and the volume resistivity decreases drastically from 1.94× 10^-3 to 8.27× 10 ^-2.cm. The surface resistivity of the antistatic coating is adjustable between 10^5 and 10^8Ω2 to fit the different antistatic materials. Static is dissipated by a conductive network of short fibers and the tunneling effect between the neighboring fibers and conductive pigments. Conductive pigments make the conductive network more perfect and improve the antistatic ability, but insulating pigments acting as barriers for the formation of conductive channel increases the surface resistivity of the coatings. The influence of pigments on the surface resistivity drops gradually with the decrease of the carbonaceous fibers volume resistivity.
基金Projects(61376076,61274026,61377024)supported by the National Natural Science Foundation of ChinaProjects(12C0108,13C321)supported by the Scientific Research Fund of Hunan Provincial Education Department,ChinaProjects(2013FJ2011,2013FJ4232)supported by the Science and Technology Plan of Hunan Province,China
文摘Metal organic chemical vapor deposition(MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heating device and thermal control technology are needed for each new reactor design. By using resistance-wire heating MOCVD reaction chamber model, thermal analysis and structure optimization of the reactor were developed from the vertical position and the distance between coils of the resistance-wire heater. It is indicated that, within a certain range, the average temperature of the graphite susceptor varies linearly with the vertical distance of heater to susceptor, and with the changed distances between the coils; furthermore, single resistance-wire heater should be placed loosely in the internal and tightly in the external. The modulate accuracy of the temperature field approximately equals the change of the average temperature corresponding to the change of the coil position.
基金Project(61074051)supported by the National Natural Science Foundation of ChinaProject(10C0709)supported by the Scientific Research Fund of Education Department of Hunan Province,ChinaProject(2011GK3058)supported by the Science and Technology Plan of Hunan Province,China
文摘As dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased,the gate leakage becomes more and more prominent and has been one of the most important limiting factors to MOSFET and circuits lifetime.Based on reliability theory and experiments,the direct tunneling current in lightly-doped drain (LDD) NMOSFET with 1.4 nm gate oxide fabricated by 90 nm complementary metal oxide semiconductor (CMOS) process was studied in depth.High-precision semiconductor parameter analyzer was used to conduct the tests.Law of variation of the direct tunneling (DT) current with channel length,channel width,measuring voltage,drain bias and reverse substrate bias was revealed.The results show that the change of the DT current obeys index law;there is a linear relationship between gate current and channel dimension;drain bias and substrate bias can reduce the gate current.
基金Project supported by the Second Stage of Brain Korea 21 Projects
文摘Many kinds of high temperature superconductor （HTS） power machines such as HTS cable, HTS fault current limitcr and HTS magnet are cooled by liquid nitrogen. The level of liquid nitrogen should be monitored and controlled to ensure the thermal stability and the dielectric strength as well. To measure the level, capacitance method and differential pressure method are usually used. However, each method has installation difficulties and measurement errors for unsteady state operation with varying system pressure. A new liquid level meter using a 2G HTS conductor is described, which has similar structure with the liquid helium level meter with NbTi filament. The level meter is fabricated with a parallel connected heater, which helps the separation of the superconducting region and normal region, considering the critical temperature, large heat capacity of conductor and cooling characteristics. The level of liquid nitrogen can be obtained from the measured voltage signal along the 2G HTS conductor. Design, fabrication and test results of the new liquid nitrogen level meter are presented.
文摘Interferograms of laser-induced epoxy fiber reinforced polymer plasmas are obtained through aMach-Zehnder interferometry system.An improved digital double-exposure Fourier method is applied to extractinitial wrapped phases from interferograms,and then an improved phase unwrapping algorithm based on a maskand a branch-cut method is proposed to solve the problem of phase unwrapping.After the inverse Abel transfor-mation of the unwrapped phase,spatial distributions of the electron density of laser-induced epoxy fiber rein-forced polymer plasma at various delays are acquired.Results show that the measured electron density of theplasma is mainly distributed on the order of 10^18 cm^3.The experiment also indicates that the total amount oflaser plasma electrons changes slightly within the recorded time and the change of the electron density is approx-imately inversely proportional to the change of the plasma volume.
