研制了一种适用于高能物理GEM探测器读出系统的数字芯片。芯片采用PAD读出方式,对GEM探测器的输出直接采样,对采样到的信号放大并成形,判断该输入是否超过由外部DAC设定的阈值,给出判断结果,并按照一个串行协议读出。芯片采用0.35μm/3....研制了一种适用于高能物理GEM探测器读出系统的数字芯片。芯片采用PAD读出方式,对GEM探测器的输出直接采样,对采样到的信号放大并成形,判断该输入是否超过由外部DAC设定的阈值,给出判断结果,并按照一个串行协议读出。芯片采用0.35μm/3.3 V CMOS工艺设计,后仿真结果显示芯片达到预期研制目标。展开更多
Colloidal quantum dots(CQDs)are affected by the quantum confinement effect,which makes their bandgap tunable.This characteristic allows these materials to cover a broader infrared spectrum,providing a costeffective al...Colloidal quantum dots(CQDs)are affected by the quantum confinement effect,which makes their bandgap tunable.This characteristic allows these materials to cover a broader infrared spectrum,providing a costeffective alternative to traditional infrared detector technology.Recently,thanks to the solution processing properties of quantum dots and their ability to integrate with silicon-based readout circuits on a single chip,infrared detectors based on HgTe CQDs have shown great application prospects.However,facing the challenges of vertically stacked photovoltaic devices,such as barrier layer matching and film non-uniformity,most devices integrated with readout circuits still use a planar structure,which limits the efficiency of light absorption and the effective separation and collection of photo-generated carriers.Here,by synthesizing high-quality HgTe CQDs and precisely controlling the interface quality,we have successfully fabricated a photovoltaic detector based on HgTe and ZnO QDs.At a working temperature of 80 K,this detector achieved a low dark current of 5.23×10^(-9)A cm^(-2),a high rectification ratio,and satisfactory detection sensitivity.This work paves a new way for the vertical integration of HgTe CQDs on silicon-based readout circuits,demonstrating their great potential in the field of high-performance infrared detection.展开更多
近年来应用于中高能核物理实验的先进前端读出专用集成电路(application specific integrated circuit,ASIC)芯片呈现出越来越强的数字化趋势,可提高系统的集成度并降低功耗。论文研制了一种高计数率多通道时间测量与串行读出电路(high-...近年来应用于中高能核物理实验的先进前端读出专用集成电路(application specific integrated circuit,ASIC)芯片呈现出越来越强的数字化趋势,可提高系统的集成度并降低功耗。论文研制了一种高计数率多通道时间测量与串行读出电路(high-count rate multi-channel time measurement and serial readout circuit,HMTRC),可实现核事件去稀疏化、去随机化的读出。该电路主要包括了基于时钟分相技术的时间数字转化器、控制器、先进先出存储器和基于令牌环逻辑的轮询读出模块。HMTRC已被集成到一款自研的16通道前端读出ASIC芯片中,可测量和储存时间信息,并利用数字驱动的前端读出架构实现时间与能量信息同步读出。测试表明,时间分辨率好于2 ns,功能符合预期。展开更多
The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum ...The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum dot(QDs)materials in a simple and convenient way to form a heterogeneous structure.Various performance enhancements have been realized through the formation of typeⅡenergy bands in heterostructures,opening up new research directions for the future development of photodetector devices.This work successfully fabricated a high-sensitivity photodetector based on WS_(2)QDs/GaAs NWs heterostructure.Under 660 nm laser excitation,the photodetector exhibits a responsivity of 368.07 A/W,a detectivity of 2.7×10^(12)Jones,an external quantum efficiency of 6.47×10^(2)%,a low-noise equivalent power of 2.27×10^(-17)W·Hz^(-1/2),a response time of 0.3 s,and a recovery time of 2.12 s.This study provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs NWs.展开更多
文摘研制了一种适用于高能物理GEM探测器读出系统的数字芯片。芯片采用PAD读出方式,对GEM探测器的输出直接采样,对采样到的信号放大并成形,判断该输入是否超过由外部DAC设定的阈值,给出判断结果,并按照一个串行协议读出。芯片采用0.35μm/3.3 V CMOS工艺设计,后仿真结果显示芯片达到预期研制目标。
基金Supported by National Key Research and Development Program in the 14th five year plan(2021YFA1200700)Strategic Priority Re⁃search Program of the Chinese Academy of Sciences(XDB0580000)Natural Science Foundation of China(62025405,62104235,62105348).
文摘Colloidal quantum dots(CQDs)are affected by the quantum confinement effect,which makes their bandgap tunable.This characteristic allows these materials to cover a broader infrared spectrum,providing a costeffective alternative to traditional infrared detector technology.Recently,thanks to the solution processing properties of quantum dots and their ability to integrate with silicon-based readout circuits on a single chip,infrared detectors based on HgTe CQDs have shown great application prospects.However,facing the challenges of vertically stacked photovoltaic devices,such as barrier layer matching and film non-uniformity,most devices integrated with readout circuits still use a planar structure,which limits the efficiency of light absorption and the effective separation and collection of photo-generated carriers.Here,by synthesizing high-quality HgTe CQDs and precisely controlling the interface quality,we have successfully fabricated a photovoltaic detector based on HgTe and ZnO QDs.At a working temperature of 80 K,this detector achieved a low dark current of 5.23×10^(-9)A cm^(-2),a high rectification ratio,and satisfactory detection sensitivity.This work paves a new way for the vertical integration of HgTe CQDs on silicon-based readout circuits,demonstrating their great potential in the field of high-performance infrared detection.
文摘近年来应用于中高能核物理实验的先进前端读出专用集成电路(application specific integrated circuit,ASIC)芯片呈现出越来越强的数字化趋势,可提高系统的集成度并降低功耗。论文研制了一种高计数率多通道时间测量与串行读出电路(high-count rate multi-channel time measurement and serial readout circuit,HMTRC),可实现核事件去稀疏化、去随机化的读出。该电路主要包括了基于时钟分相技术的时间数字转化器、控制器、先进先出存储器和基于令牌环逻辑的轮询读出模块。HMTRC已被集成到一款自研的16通道前端读出ASIC芯片中,可测量和储存时间信息,并利用数字驱动的前端读出架构实现时间与能量信息同步读出。测试表明,时间分辨率好于2 ns,功能符合预期。
文摘The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum dot(QDs)materials in a simple and convenient way to form a heterogeneous structure.Various performance enhancements have been realized through the formation of typeⅡenergy bands in heterostructures,opening up new research directions for the future development of photodetector devices.This work successfully fabricated a high-sensitivity photodetector based on WS_(2)QDs/GaAs NWs heterostructure.Under 660 nm laser excitation,the photodetector exhibits a responsivity of 368.07 A/W,a detectivity of 2.7×10^(12)Jones,an external quantum efficiency of 6.47×10^(2)%,a low-noise equivalent power of 2.27×10^(-17)W·Hz^(-1/2),a response time of 0.3 s,and a recovery time of 2.12 s.This study provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs NWs.
