TN321.5 2002021442源漏轻掺杂结构多晶硅薄膜晶体管模拟研究=Simu-lation of static - characteristics of lightly - dopeddrain polysilicon thin film transistors[刊,中]/纪世阳,李牧菊,杨柏梁(中科院长春光机所.吉林,长春(130021)...TN321.5 2002021442源漏轻掺杂结构多晶硅薄膜晶体管模拟研究=Simu-lation of static - characteristics of lightly - dopeddrain polysilicon thin film transistors[刊,中]/纪世阳,李牧菊,杨柏梁(中科院长春光机所.吉林,长春(130021))∥液晶与显示.—2001,16(2).展开更多
As dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased,the gate leakage becomes more and more prominent and has been one of the mo...As dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased,the gate leakage becomes more and more prominent and has been one of the most important limiting factors to MOSFET and circuits lifetime.Based on reliability theory and experiments,the direct tunneling current in lightly-doped drain (LDD) NMOSFET with 1.4 nm gate oxide fabricated by 90 nm complementary metal oxide semiconductor (CMOS) process was studied in depth.High-precision semiconductor parameter analyzer was used to conduct the tests.Law of variation of the direct tunneling (DT) current with channel length,channel width,measuring voltage,drain bias and reverse substrate bias was revealed.The results show that the change of the DT current obeys index law;there is a linear relationship between gate current and channel dimension;drain bias and substrate bias can reduce the gate current.展开更多
文摘TN321.5 2002021442源漏轻掺杂结构多晶硅薄膜晶体管模拟研究=Simu-lation of static - characteristics of lightly - dopeddrain polysilicon thin film transistors[刊,中]/纪世阳,李牧菊,杨柏梁(中科院长春光机所.吉林,长春(130021))∥液晶与显示.—2001,16(2).
基金Project(61074051)supported by the National Natural Science Foundation of ChinaProject(10C0709)supported by the Scientific Research Fund of Education Department of Hunan Province,ChinaProject(2011GK3058)supported by the Science and Technology Plan of Hunan Province,China
文摘As dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased,the gate leakage becomes more and more prominent and has been one of the most important limiting factors to MOSFET and circuits lifetime.Based on reliability theory and experiments,the direct tunneling current in lightly-doped drain (LDD) NMOSFET with 1.4 nm gate oxide fabricated by 90 nm complementary metal oxide semiconductor (CMOS) process was studied in depth.High-precision semiconductor parameter analyzer was used to conduct the tests.Law of variation of the direct tunneling (DT) current with channel length,channel width,measuring voltage,drain bias and reverse substrate bias was revealed.The results show that the change of the DT current obeys index law;there is a linear relationship between gate current and channel dimension;drain bias and substrate bias can reduce the gate current.
