采用固相法制备BiFeO_3-x[BSN-G](x=0~5.0wt%)陶瓷样品,研究添加不同量的BSN-G对Bi FeO_3陶瓷微观形貌,电性能及磁性能的影响。研究结果表明:BSN-G的加入使得陶瓷样品气孔率降低,致密度提高。随着x的增加,陶瓷的介电常数和介电损耗呈逐...采用固相法制备BiFeO_3-x[BSN-G](x=0~5.0wt%)陶瓷样品,研究添加不同量的BSN-G对Bi FeO_3陶瓷微观形貌,电性能及磁性能的影响。研究结果表明:BSN-G的加入使得陶瓷样品气孔率降低,致密度提高。随着x的增加,陶瓷的介电常数和介电损耗呈逐渐降低趋势,当x=5%时,样品在1 k Hz频率下的介电损耗为0.003。此外,添加BSN-G使得BiFeO_3陶瓷的漏导电流降低,x=5%的样品具有饱和的电滞回线,其饱和极化强度PS为1.5μC/cm^2,漏导电流密度J为0.39×10-6A/cm^2。交流阻抗图谱分析表明随着x的增加,样品的电阻呈增大趋势。活化能Ea随x增加而依次降低,进一步说明其损耗呈逐渐降低趋势。随着x的增加,样品的磁性能得到一定改善。展开更多
As dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased,the gate leakage becomes more and more prominent and has been one of the mo...As dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased,the gate leakage becomes more and more prominent and has been one of the most important limiting factors to MOSFET and circuits lifetime.Based on reliability theory and experiments,the direct tunneling current in lightly-doped drain (LDD) NMOSFET with 1.4 nm gate oxide fabricated by 90 nm complementary metal oxide semiconductor (CMOS) process was studied in depth.High-precision semiconductor parameter analyzer was used to conduct the tests.Law of variation of the direct tunneling (DT) current with channel length,channel width,measuring voltage,drain bias and reverse substrate bias was revealed.The results show that the change of the DT current obeys index law;there is a linear relationship between gate current and channel dimension;drain bias and substrate bias can reduce the gate current.展开更多
文摘采用固相法制备BiFeO_3-x[BSN-G](x=0~5.0wt%)陶瓷样品,研究添加不同量的BSN-G对Bi FeO_3陶瓷微观形貌,电性能及磁性能的影响。研究结果表明:BSN-G的加入使得陶瓷样品气孔率降低,致密度提高。随着x的增加,陶瓷的介电常数和介电损耗呈逐渐降低趋势,当x=5%时,样品在1 k Hz频率下的介电损耗为0.003。此外,添加BSN-G使得BiFeO_3陶瓷的漏导电流降低,x=5%的样品具有饱和的电滞回线,其饱和极化强度PS为1.5μC/cm^2,漏导电流密度J为0.39×10-6A/cm^2。交流阻抗图谱分析表明随着x的增加,样品的电阻呈增大趋势。活化能Ea随x增加而依次降低,进一步说明其损耗呈逐渐降低趋势。随着x的增加,样品的磁性能得到一定改善。
基金Project(61074051)supported by the National Natural Science Foundation of ChinaProject(10C0709)supported by the Scientific Research Fund of Education Department of Hunan Province,ChinaProject(2011GK3058)supported by the Science and Technology Plan of Hunan Province,China
文摘As dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased,the gate leakage becomes more and more prominent and has been one of the most important limiting factors to MOSFET and circuits lifetime.Based on reliability theory and experiments,the direct tunneling current in lightly-doped drain (LDD) NMOSFET with 1.4 nm gate oxide fabricated by 90 nm complementary metal oxide semiconductor (CMOS) process was studied in depth.High-precision semiconductor parameter analyzer was used to conduct the tests.Law of variation of the direct tunneling (DT) current with channel length,channel width,measuring voltage,drain bias and reverse substrate bias was revealed.The results show that the change of the DT current obeys index law;there is a linear relationship between gate current and channel dimension;drain bias and substrate bias can reduce the gate current.
