In this paper,we investigate the strong Feller property of stochastic differential equations(SDEs)with super-linear drift and Hölder diffusion coefficients.By utilizing the Girsanov theorem,coupling method,trunca...In this paper,we investigate the strong Feller property of stochastic differential equations(SDEs)with super-linear drift and Hölder diffusion coefficients.By utilizing the Girsanov theorem,coupling method,truncation method and the Yamada-Watanabe approximation technique,we derived the strong Feller property of the solution.展开更多
对一种采用新结构的LDMOS(lateral double diffused metal oxide semiconductor)器件建立了模型.该器件在LDMOS中采用异质双栅(dual material gate,DMG)结构,这样使得该器件(DMG-LDMOS)同时具有LDMOS和DMG MOSFET的特性和优点.给出了DMG...对一种采用新结构的LDMOS(lateral double diffused metal oxide semiconductor)器件建立了模型.该器件在LDMOS中采用异质双栅(dual material gate,DMG)结构,这样使得该器件(DMG-LDMOS)同时具有LDMOS和DMG MOSFET的特性和优点.给出了DMG-LDMOS中沟道区表面电势和电场的一维表达式,并在此基础上考虑了大驱动电压下引入的沟道载流子速度过冲效应的影响,建立了基于物理的沟道电流模型.最后比较了Medici器件仿真结果和所建立的沟道电流模型,验证了该模型的可用性.展开更多
基金Supported by the National Natural Science Foundation of China(11926322)the Fundamental Research Funds for the Central Universities of South-Central MinZu University(CZY22013,3212023sycxjj001)。
文摘In this paper,we investigate the strong Feller property of stochastic differential equations(SDEs)with super-linear drift and Hölder diffusion coefficients.By utilizing the Girsanov theorem,coupling method,truncation method and the Yamada-Watanabe approximation technique,we derived the strong Feller property of the solution.
文摘对一种采用新结构的LDMOS(lateral double diffused metal oxide semiconductor)器件建立了模型.该器件在LDMOS中采用异质双栅(dual material gate,DMG)结构,这样使得该器件(DMG-LDMOS)同时具有LDMOS和DMG MOSFET的特性和优点.给出了DMG-LDMOS中沟道区表面电势和电场的一维表达式,并在此基础上考虑了大驱动电压下引入的沟道载流子速度过冲效应的影响,建立了基于物理的沟道电流模型.最后比较了Medici器件仿真结果和所建立的沟道电流模型,验证了该模型的可用性.
