To investigate airflow pattern and its impact on particle deposition, finite-volume based computational fluid dynamics （CFD） simulations were conducted in the diseased triple-bifitrcation airways. Computations were ...To investigate airflow pattern and its impact on particle deposition, finite-volume based computational fluid dynamics （CFD） simulations were conducted in the diseased triple-bifitrcation airways. Computations were carried out for twenty Reynolds numbers ranging from 100 to 2 000 in the step of 100. Particles in the size range of 1-10 μm were conducted. Two particle deposition mechanisms （gravitational sedimentation and inertial impaction） were considered. The results indicate that there are strong relationship between airflow structures and particle deposition patterns. Deposition efficiency is different for different particles in the whole range of the respiratory rates. Particles in different sizes can deposit at different sites. Smaller particles can be uniformly deposited at the inside wall of the considered model. Larger particles can be mainly deposited in the proximal bifurcations. Deposition fraction varies a lot for different inlet Reynolds numbers. For lower Reynolds numbers, deposition fraction is relatively small and varies a little with varying the diameters. For Reynolds number to target the aerosols at the specific site. higher Reynolds numbers, there is a most efficient diameter for each展开更多
Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established by considering mass, momentum and energy transfer simultaneously. Then, CFD software was used to simulate ...Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established by considering mass, momentum and energy transfer simultaneously. Then, CFD software was used to simulate the flow, heat transfer and chemical reaction process in reduction furnace and to analyze the change law of deposition characteristic along with the H_2 mole fraction, silicon rod height and silicon rod diameter. The results show that with the increase of H_2 mole fraction, silicon growth rate increases firstly and then decreases. On the contrary, SiHCl_3 conversion rate and unit energy consumption decrease firstly and then increase. Silicon production rate increases constantly. The optimal H_2 mole fraction is 0.8-0.85. With the growth of silicon rod height, Si HCl3 conversion rate, silicon production rate and silicon growth rate increase, while unit energy consumption decreases. In terms of chemical reaction, the higher the silicon rod is, the better the performance is. In the view of the top-heavy situation, the actual silicon rod height is limited to be below 3 m. With the increase of silicon rod diameter, silicon growth rate decreases firstly and then increases. Besides, SiHCl_3 conversion rate and silicon production rate increase, while unit energy consumption first decreases sharply, then becomes steady. In practice, the bigger silicon rod diameter is more suitable. The optimal silicon rod diameter must be over 120 mm.展开更多
基金Project(51178466) supported by the National Natural Science Foundation of ChinaProject(200545) supported by the Foundation for the Author of National Excellent Doctoral Dissertation of ChinaProject(2011JQ006) supported by the Fundamental Research Funds of the Central Universities of China
文摘To investigate airflow pattern and its impact on particle deposition, finite-volume based computational fluid dynamics （CFD） simulations were conducted in the diseased triple-bifitrcation airways. Computations were carried out for twenty Reynolds numbers ranging from 100 to 2 000 in the step of 100. Particles in the size range of 1-10 μm were conducted. Two particle deposition mechanisms （gravitational sedimentation and inertial impaction） were considered. The results indicate that there are strong relationship between airflow structures and particle deposition patterns. Deposition efficiency is different for different particles in the whole range of the respiratory rates. Particles in different sizes can deposit at different sites. Smaller particles can be uniformly deposited at the inside wall of the considered model. Larger particles can be mainly deposited in the proximal bifurcations. Deposition fraction varies a lot for different inlet Reynolds numbers. For lower Reynolds numbers, deposition fraction is relatively small and varies a little with varying the diameters. For Reynolds number to target the aerosols at the specific site. higher Reynolds numbers, there is a most efficient diameter for each
基金Project(12C0379) supported by Scientific Research Fund of Hunan Province,China
文摘Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established by considering mass, momentum and energy transfer simultaneously. Then, CFD software was used to simulate the flow, heat transfer and chemical reaction process in reduction furnace and to analyze the change law of deposition characteristic along with the H_2 mole fraction, silicon rod height and silicon rod diameter. The results show that with the increase of H_2 mole fraction, silicon growth rate increases firstly and then decreases. On the contrary, SiHCl_3 conversion rate and unit energy consumption decrease firstly and then increase. Silicon production rate increases constantly. The optimal H_2 mole fraction is 0.8-0.85. With the growth of silicon rod height, Si HCl3 conversion rate, silicon production rate and silicon growth rate increase, while unit energy consumption decreases. In terms of chemical reaction, the higher the silicon rod is, the better the performance is. In the view of the top-heavy situation, the actual silicon rod height is limited to be below 3 m. With the increase of silicon rod diameter, silicon growth rate decreases firstly and then increases. Besides, SiHCl_3 conversion rate and silicon production rate increase, while unit energy consumption first decreases sharply, then becomes steady. In practice, the bigger silicon rod diameter is more suitable. The optimal silicon rod diameter must be over 120 mm.
