Ti O2 films and N- doped Ti O2 films were prepared by magnetron sputtering methodology.The films were illuminated at365 nm for5— 2 0 min followed by the measurementof contactangles and surface photovoltage spectrosco...Ti O2 films and N- doped Ti O2 films were prepared by magnetron sputtering methodology.The films were illuminated at365 nm for5— 2 0 min followed by the measurementof contactangles and surface photovoltage spectroscopy.The results show thatfor n- type Ti O2 film,UV illumination treatment can in- crease the photovoltage,while for p- type Ti O2 film,such treatment can decreases the photovoltage.The photovoltaic changing was explained by Ti— OH group increasing due to photo- induced hydrophility.For n- type Ti O2 film,Ti— OH groups can increase the photo- induced charge separation and thus iucrease the photovoltage;for p- type Ti O2 film,Ti—OH groups decrease the photo- induced charge separation and thus decrease the photovoltage.展开更多
文摘Ti O2 films and N- doped Ti O2 films were prepared by magnetron sputtering methodology.The films were illuminated at365 nm for5— 2 0 min followed by the measurementof contactangles and surface photovoltage spectroscopy.The results show thatfor n- type Ti O2 film,UV illumination treatment can in- crease the photovoltage,while for p- type Ti O2 film,such treatment can decreases the photovoltage.The photovoltaic changing was explained by Ti— OH group increasing due to photo- induced hydrophility.For n- type Ti O2 film,Ti— OH groups can increase the photo- induced charge separation and thus iucrease the photovoltage;for p- type Ti O2 film,Ti—OH groups decrease the photo- induced charge separation and thus decrease the photovoltage.
