Aluminium nitride AlN(100) thin films have been successfully deposited on Si(111) substrates by reactive magnetron sputtering technique. The films have been characterized by XRD to determine their crystalline preferen...Aluminium nitride AlN(100) thin films have been successfully deposited on Si(111) substrates by reactive magnetron sputtering technique. The films have been characterized by XRD to determine their crystalline preferential orientation. The results show that the experimental parameters including total pressure of working gas(N 2+Ar), N 2 partial pressure, target power and the distance from target to substrate affected crystal orientation, deposition rate, and grain size of AlN thin film. The effects of sputtering time and the substrate temperature on AlN film structure have also been investigated. The optimum experimental parameters for AlN(100) thin film deposition are given.展开更多
The component of the surface and profile of AlN films have been investigated using X ray photoelectron spectrometry(XPS). The results show that the surface of the films was composed by Al, N, O and C elements. C and O...The component of the surface and profile of AlN films have been investigated using X ray photoelectron spectrometry(XPS). The results show that the surface of the films was composed by Al, N, O and C elements. C and O contaminations are attributed both to the sputtering chamber venting and to exposure of the films to air. According XPS depth profile analysis, it is found that the composition of the film along the growth axis is nearly uniform, and Al/N ratio is close to that in the AlN stoichiometry. Beneath the surface, the amount of O in the film is found below 5%.展开更多
文摘Aluminium nitride AlN(100) thin films have been successfully deposited on Si(111) substrates by reactive magnetron sputtering technique. The films have been characterized by XRD to determine their crystalline preferential orientation. The results show that the experimental parameters including total pressure of working gas(N 2+Ar), N 2 partial pressure, target power and the distance from target to substrate affected crystal orientation, deposition rate, and grain size of AlN thin film. The effects of sputtering time and the substrate temperature on AlN film structure have also been investigated. The optimum experimental parameters for AlN(100) thin film deposition are given.
文摘The component of the surface and profile of AlN films have been investigated using X ray photoelectron spectrometry(XPS). The results show that the surface of the films was composed by Al, N, O and C elements. C and O contaminations are attributed both to the sputtering chamber venting and to exposure of the films to air. According XPS depth profile analysis, it is found that the composition of the film along the growth axis is nearly uniform, and Al/N ratio is close to that in the AlN stoichiometry. Beneath the surface, the amount of O in the film is found below 5%.
