U644.18 98032094连续与脉冲激光诱导气相反应制备超细粉=Synthe-sis of ultrafine powders via vapor—reactioninduced by CW and pulsed laser beams[刊,中]/金桂林,张兆奎.金晓英,石庆红,陈鹏彬（华东理工大学物理系.上海（200237...U644.18 98032094连续与脉冲激光诱导气相反应制备超细粉=Synthe-sis of ultrafine powders via vapor—reactioninduced by CW and pulsed laser beams[刊,中]/金桂林,张兆奎.金晓英,石庆红,陈鹏彬（华东理工大学物理系.上海（200237））∥应用激光.—1997,17（1）.—11—13用连续以及脉冲的CO<sub>2</sub>激光诱导三甲基氯硅烷的气相化学反应,制备SiC超细粉。展开更多
To protect carbon/carbon (C/C) composites from oxidation, a SiC coating modified with SiO2 was prepared by a complex technology. The inner SiC coating with thickness varying from 150 to 300 μm was initially coated by...To protect carbon/carbon (C/C) composites from oxidation, a SiC coating modified with SiO2 was prepared by a complex technology. The inner SiC coating with thickness varying from 150 to 300 μm was initially coated by chemical vapor reaction (CVR): a simple and cheap technique to prepare the SiC coating via siliconizing the substrate that was exposed to the mixed vapor (Si and SiO2) at high temperatures (1 923?2 273 K). Then the as-prepared coating was processed by a dipping and drying procedure with tetraethoxysilane as source materials to form SiO2 to fill the cracks and holes. Oxidation tests show that, after oxidation in air at 1 623 K for 10 h and thermal cycling between 1 623 K and room temperature 5 times, the mass loss of the CVR coated sample is up to 18.21%, while the sample coated with modified coating is only 5.96%, exhibiting an obvious improvement of oxidation and thermal shock resistance of the coating. The mass loss of the modified sample is mainly contributed to the reaction of C/C substrate with oxygen diffusing through the penetrating cracks formed in thermal shock tests.展开更多
Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established by considering mass, momentum and energy transfer simultaneously. Then, CFD software was used to simulate ...Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established by considering mass, momentum and energy transfer simultaneously. Then, CFD software was used to simulate the flow, heat transfer and chemical reaction process in reduction furnace and to analyze the change law of deposition characteristic along with the H_2 mole fraction, silicon rod height and silicon rod diameter. The results show that with the increase of H_2 mole fraction, silicon growth rate increases firstly and then decreases. On the contrary, SiHCl_3 conversion rate and unit energy consumption decrease firstly and then increase. Silicon production rate increases constantly. The optimal H_2 mole fraction is 0.8-0.85. With the growth of silicon rod height, Si HCl3 conversion rate, silicon production rate and silicon growth rate increase, while unit energy consumption decreases. In terms of chemical reaction, the higher the silicon rod is, the better the performance is. In the view of the top-heavy situation, the actual silicon rod height is limited to be below 3 m. With the increase of silicon rod diameter, silicon growth rate decreases firstly and then increases. Besides, SiHCl_3 conversion rate and silicon production rate increase, while unit energy consumption first decreases sharply, then becomes steady. In practice, the bigger silicon rod diameter is more suitable. The optimal silicon rod diameter must be over 120 mm.展开更多
文摘U644.18 98032094连续与脉冲激光诱导气相反应制备超细粉=Synthe-sis of ultrafine powders via vapor—reactioninduced by CW and pulsed laser beams[刊,中]/金桂林,张兆奎.金晓英,石庆红,陈鹏彬（华东理工大学物理系.上海（200237））∥应用激光.—1997,17（1）.—11—13用连续以及脉冲的CO<sub>2</sub>激光诱导三甲基氯硅烷的气相化学反应,制备SiC超细粉。
基金Project(2006CB600901) supported by the National Basic Research Program of ChinaProject(50802115) supported by the National Natural Science Foundation of China
文摘To protect carbon/carbon (C/C) composites from oxidation, a SiC coating modified with SiO2 was prepared by a complex technology. The inner SiC coating with thickness varying from 150 to 300 μm was initially coated by chemical vapor reaction (CVR): a simple and cheap technique to prepare the SiC coating via siliconizing the substrate that was exposed to the mixed vapor (Si and SiO2) at high temperatures (1 923?2 273 K). Then the as-prepared coating was processed by a dipping and drying procedure with tetraethoxysilane as source materials to form SiO2 to fill the cracks and holes. Oxidation tests show that, after oxidation in air at 1 623 K for 10 h and thermal cycling between 1 623 K and room temperature 5 times, the mass loss of the CVR coated sample is up to 18.21%, while the sample coated with modified coating is only 5.96%, exhibiting an obvious improvement of oxidation and thermal shock resistance of the coating. The mass loss of the modified sample is mainly contributed to the reaction of C/C substrate with oxygen diffusing through the penetrating cracks formed in thermal shock tests.
基金Project(12C0379) supported by Scientific Research Fund of Hunan Province,China
文摘Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established by considering mass, momentum and energy transfer simultaneously. Then, CFD software was used to simulate the flow, heat transfer and chemical reaction process in reduction furnace and to analyze the change law of deposition characteristic along with the H_2 mole fraction, silicon rod height and silicon rod diameter. The results show that with the increase of H_2 mole fraction, silicon growth rate increases firstly and then decreases. On the contrary, SiHCl_3 conversion rate and unit energy consumption decrease firstly and then increase. Silicon production rate increases constantly. The optimal H_2 mole fraction is 0.8-0.85. With the growth of silicon rod height, Si HCl3 conversion rate, silicon production rate and silicon growth rate increase, while unit energy consumption decreases. In terms of chemical reaction, the higher the silicon rod is, the better the performance is. In the view of the top-heavy situation, the actual silicon rod height is limited to be below 3 m. With the increase of silicon rod diameter, silicon growth rate decreases firstly and then increases. Besides, SiHCl_3 conversion rate and silicon production rate increase, while unit energy consumption first decreases sharply, then becomes steady. In practice, the bigger silicon rod diameter is more suitable. The optimal silicon rod diameter must be over 120 mm.
