The optimization of electrolytes and the material removal mechanisms for Cu electrochemical mechanical planarization(ECMP)at different pH values including 5-methyl-1H-benzotriazole(TTA),hydroxyethylidenediphosphoric a...The optimization of electrolytes and the material removal mechanisms for Cu electrochemical mechanical planarization(ECMP)at different pH values including 5-methyl-1H-benzotriazole(TTA),hydroxyethylidenediphosphoric acid(HEDP),and tribasic ammonium citrate(TAC)were investigated by electrochemical techniques,X-ray photoelectron spectrometer(XPS)analysis,nano-scratch tests,AFM measurements,and polishing of Cu-coated blanket wafers.The experimental results show that the planarization efficiency and the surface quality after ECMP obtained in alkali-based solutions are superior to that in acidic-based solutions,especially at pH=8.The optimal electrolyte compositions(mass fraction)are 6% HEDP,0.3% TTA and 3% TAC at pH=8.The main factor affecting the thickness of the oxide layer formed during ECMP process is the applied potential.The soft layer formation is a major mechanism for electrochemical enhanced mechanical abrasion.The surface topography evolution before and after electrochemical polishing(ECP)illustrates the mechanism of mechanical abrasion accelerating electrochemical dissolution,that is,the residual stress caused by the mechanical wear enhances the electrochemical dissolution rate.This understanding is beneficial for optimization of ECMP processes.展开更多
Low dielectric constant materials/Cu interconnects integration technology provides the direction as well as the challenges in the fabrication of integrated circuits(IC) wafers during copper electrochemical-mechanical ...Low dielectric constant materials/Cu interconnects integration technology provides the direction as well as the challenges in the fabrication of integrated circuits(IC) wafers during copper electrochemical-mechanical polishing(ECMP). These challenges arise primarily from the mechanical fragility of such dielectrics, in which the undesirable scratches are prone to produce. To mitigate this problem, a new model is proposed to predict the initiation of scratching based on the mechanical properties of passive layer and copper substrate. In order to deduce the ratio of the passive layer yield strength to the substrate yield strength and the layer thickness, the limit analysis solution of surface scratch under Berkovich indenter is used to analyze the nano-scratch experimental measurements. The modulus of the passive layer can be calculated by the nano-indentation test combined with the FEM simulation. It is found that the film modulus is about 30% of the substrate modulus. Various regimes of scratching are delineated by FEM modeling and the results are verified by experimental data.展开更多
基金Project(50975058)supported by the National Science Foundation of China
文摘The optimization of electrolytes and the material removal mechanisms for Cu electrochemical mechanical planarization(ECMP)at different pH values including 5-methyl-1H-benzotriazole(TTA),hydroxyethylidenediphosphoric acid(HEDP),and tribasic ammonium citrate(TAC)were investigated by electrochemical techniques,X-ray photoelectron spectrometer(XPS)analysis,nano-scratch tests,AFM measurements,and polishing of Cu-coated blanket wafers.The experimental results show that the planarization efficiency and the surface quality after ECMP obtained in alkali-based solutions are superior to that in acidic-based solutions,especially at pH=8.The optimal electrolyte compositions(mass fraction)are 6% HEDP,0.3% TTA and 3% TAC at pH=8.The main factor affecting the thickness of the oxide layer formed during ECMP process is the applied potential.The soft layer formation is a major mechanism for electrochemical enhanced mechanical abrasion.The surface topography evolution before and after electrochemical polishing(ECP)illustrates the mechanism of mechanical abrasion accelerating electrochemical dissolution,that is,the residual stress caused by the mechanical wear enhances the electrochemical dissolution rate.This understanding is beneficial for optimization of ECMP processes.
基金Project(50975058) supported by the National Natural Science Foundation of China
文摘Low dielectric constant materials/Cu interconnects integration technology provides the direction as well as the challenges in the fabrication of integrated circuits(IC) wafers during copper electrochemical-mechanical polishing(ECMP). These challenges arise primarily from the mechanical fragility of such dielectrics, in which the undesirable scratches are prone to produce. To mitigate this problem, a new model is proposed to predict the initiation of scratching based on the mechanical properties of passive layer and copper substrate. In order to deduce the ratio of the passive layer yield strength to the substrate yield strength and the layer thickness, the limit analysis solution of surface scratch under Berkovich indenter is used to analyze the nano-scratch experimental measurements. The modulus of the passive layer can be calculated by the nano-indentation test combined with the FEM simulation. It is found that the film modulus is about 30% of the substrate modulus. Various regimes of scratching are delineated by FEM modeling and the results are verified by experimental data.
