The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribu...The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribution of its electric field.Regarding the issue of accurately predicting the depth of diffusion in InGaAs/InP SPAD,simulation analysis and device development were carried out,focusing on the dual diffusion behavior of zinc atoms.A formula of X_(j)=k√t-t_(0)+c to quantitatively predict the diffusion depth is obtained by fitting the simulated twice-diffusion depths based on a two-dimensional(2D)model.The 2D impurity morphologies and the one-dimensional impurity profiles for the dual-diffused region are characterized by using scanning electron micros-copy and secondary ion mass spectrometry as a function of the diffusion depth,respectively.InGaAs/InP SPAD devices with different dual-diffusion conditions are also fabricated,which show breakdown behaviors well consis-tent with the simulated results under the same junction geometries.The dark count rate(DCR)of the device de-creased as the multiplication width increased,as indicated by the results.DCRs of 2×10^(6),1×10^(5),4×10^(4),and 2×10^(4) were achieved at temperatures of 300 K,273 K,263 K,and 253 K,respectively,with a bias voltage of 3 V,when the multiplication width was 1.5µm.These results demonstrate an effective prediction route for accu-rately controlling the dual-diffused zinc junction geometry in InP-based planar device processing.展开更多
通过实验比较研究了基于SNSPD与SPAD探测器的激光测距系统.实验中,当接收回波端衰减120 d B时,天空光背景可忽略,基于SPAD的激光测距系统探测概率低于0.2%,而基于SNSPD的激光测距系统探测概率达35%;当激光发射频率低于1 k Hz,基于SNSPD...通过实验比较研究了基于SNSPD与SPAD探测器的激光测距系统.实验中,当接收回波端衰减120 d B时,天空光背景可忽略,基于SPAD的激光测距系统探测概率低于0.2%,而基于SNSPD的激光测距系统探测概率达35%;当激光发射频率低于1 k Hz,基于SNSPD的激光测距系统探测概率比SPAD高60%以上.研究表明:在探测弱信号回波光子时,SNSPD的探测性能远远优于SPAD,其原因是SNSPD具有较低的暗计数和高探测概率.与此同时,在接收端无衰减情况下,天空光背景会带来暗计数,影响测距系统信噪比.通过仿真分析表明,当背景亮度L0高于30 W/(m^2·sr)时,该基于SNSPD的激光测距系统的信噪比低于6,可能影响测距系统稳定探测.展开更多
针对现有单光子探测器模块价格昂贵和体积大的不足,设计了基于In Ga As/In P雪崩光电二极管(APD)的便携式单光子探测器,给出了探测器温控模块和偏置电压源的设计电路,门控信号的产生和雪崩信号的提取由FPGA完成。实验结果表明:在200 MH...针对现有单光子探测器模块价格昂贵和体积大的不足,设计了基于In Ga As/In P雪崩光电二极管(APD)的便携式单光子探测器,给出了探测器温控模块和偏置电压源的设计电路,门控信号的产生和雪崩信号的提取由FPGA完成。实验结果表明:在200 MHz门控条件且制冷温度为-55℃时,探测器的最大光子探测效率(PDE)约为16%,当探测效率为12%时,暗计数率(DCR)约为8.2×10-6/ns。展开更多
基金Supported by National Natural Science Foundation of China(61774129,61704145,61525305,61827812)Hunan Provincial Natural Science Fund for Distinguished Young Scholars(2015JJ1014)
基金Supported by the National Natural Science Foundation of China(NSFC)(62174166,11991063,U2241219)Shanghai Municipal Science and Technology Major Project(2019SHZDZX01,22JC1402902)the Strategic Priority Research Program of Chinese Academy of Sciences(XDB43010200)。
基金Supported by Shanghai Natural Science Foundation(22ZR1472600).
文摘The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribution of its electric field.Regarding the issue of accurately predicting the depth of diffusion in InGaAs/InP SPAD,simulation analysis and device development were carried out,focusing on the dual diffusion behavior of zinc atoms.A formula of X_(j)=k√t-t_(0)+c to quantitatively predict the diffusion depth is obtained by fitting the simulated twice-diffusion depths based on a two-dimensional(2D)model.The 2D impurity morphologies and the one-dimensional impurity profiles for the dual-diffused region are characterized by using scanning electron micros-copy and secondary ion mass spectrometry as a function of the diffusion depth,respectively.InGaAs/InP SPAD devices with different dual-diffusion conditions are also fabricated,which show breakdown behaviors well consis-tent with the simulated results under the same junction geometries.The dark count rate(DCR)of the device de-creased as the multiplication width increased,as indicated by the results.DCRs of 2×10^(6),1×10^(5),4×10^(4),and 2×10^(4) were achieved at temperatures of 300 K,273 K,263 K,and 253 K,respectively,with a bias voltage of 3 V,when the multiplication width was 1.5µm.These results demonstrate an effective prediction route for accu-rately controlling the dual-diffused zinc junction geometry in InP-based planar device processing.
文摘通过实验比较研究了基于SNSPD与SPAD探测器的激光测距系统.实验中,当接收回波端衰减120 d B时,天空光背景可忽略,基于SPAD的激光测距系统探测概率低于0.2%,而基于SNSPD的激光测距系统探测概率达35%;当激光发射频率低于1 k Hz,基于SNSPD的激光测距系统探测概率比SPAD高60%以上.研究表明:在探测弱信号回波光子时,SNSPD的探测性能远远优于SPAD,其原因是SNSPD具有较低的暗计数和高探测概率.与此同时,在接收端无衰减情况下,天空光背景会带来暗计数,影响测距系统信噪比.通过仿真分析表明,当背景亮度L0高于30 W/(m^2·sr)时,该基于SNSPD的激光测距系统的信噪比低于6,可能影响测距系统稳定探测.
文摘针对现有单光子探测器模块价格昂贵和体积大的不足,设计了基于In Ga As/In P雪崩光电二极管(APD)的便携式单光子探测器,给出了探测器温控模块和偏置电压源的设计电路,门控信号的产生和雪崩信号的提取由FPGA完成。实验结果表明:在200 MHz门控条件且制冷温度为-55℃时,探测器的最大光子探测效率(PDE)约为16%,当探测效率为12%时,暗计数率(DCR)约为8.2×10-6/ns。
