针对智能家居终端设备的极大差异带来的网络接口不统一问题,设计了四线控制家电的RF通信模块,其接口简单,具有高兼容性。首先介绍了基于射频无线通信技术的智能家居系统,设计并实现了一款采用STM8S103F3单片机和CC1101无线收发器的通信...针对智能家居终端设备的极大差异带来的网络接口不统一问题,设计了四线控制家电的RF通信模块,其接口简单,具有高兼容性。首先介绍了基于射频无线通信技术的智能家居系统,设计并实现了一款采用STM8S103F3单片机和CC1101无线收发器的通信模块,重点论述了通信模块的硬件及软件设计。用软件模拟FIFO(first input first output,先入先出队列)缓冲区确保不丢失数据,且发送数据前检查同频电磁波实现防冲突功能。测试表明,该无线通信模块能够满足低成本、低功耗和远距离无线传输的要求。展开更多
This paper lenges in the design of discusses some chal- millimeter-wave （mln- wave） circuits and systems for 5th generation （5G） wireless systems in CMOS process. The properties of some passive and active devices ...This paper lenges in the design of discusses some chal- millimeter-wave （mln- wave） circuits and systems for 5th generation （5G） wireless systems in CMOS process. The properties of some passive and active devices such as inductors, capacitors, transmission lines, translbrmers and transistors in mm-wave frequency band are discussed. Self-healing technique dealing with PVT variation, res- onant mode switching technique to enhance frequency tuning range of voltage controlled oscillator （VCO） and dual mode technique for power amplifier （PA） efficiency enhancement are introduced. At last, A fully-integrated 60 GHz 5 Gb/s QPSK transceiver with the transmit/receive （T/R） switch in 65nm CMOS process is introduced. The measured error vector magnitude （EVM） of the TX is -21.9 dB while the bit error rate （BER） of the RX with a -52 dBm sine-wave input is below 8e-7 when transmitting/receiving 5 Gb/s data. The transceiver is powered by 1.0 V and 1.2 V supply （except the phase-frequency detector and charge-pump in the frequency synthesizer which are powered by 2.5 V supply） and con- sumes 135 mW in TX mode and 176 mW in RX mode.展开更多
文摘针对智能家居终端设备的极大差异带来的网络接口不统一问题,设计了四线控制家电的RF通信模块,其接口简单,具有高兼容性。首先介绍了基于射频无线通信技术的智能家居系统,设计并实现了一款采用STM8S103F3单片机和CC1101无线收发器的通信模块,重点论述了通信模块的硬件及软件设计。用软件模拟FIFO(first input first output,先入先出队列)缓冲区确保不丢失数据,且发送数据前检查同频电磁波实现防冲突功能。测试表明,该无线通信模块能够满足低成本、低功耗和远距离无线传输的要求。
基金supported in part by the National Natural Science Foundation of China under Grant 61331003 and Grant 61222405
文摘This paper lenges in the design of discusses some chal- millimeter-wave （mln- wave） circuits and systems for 5th generation （5G） wireless systems in CMOS process. The properties of some passive and active devices such as inductors, capacitors, transmission lines, translbrmers and transistors in mm-wave frequency band are discussed. Self-healing technique dealing with PVT variation, res- onant mode switching technique to enhance frequency tuning range of voltage controlled oscillator （VCO） and dual mode technique for power amplifier （PA） efficiency enhancement are introduced. At last, A fully-integrated 60 GHz 5 Gb/s QPSK transceiver with the transmit/receive （T/R） switch in 65nm CMOS process is introduced. The measured error vector magnitude （EVM） of the TX is -21.9 dB while the bit error rate （BER） of the RX with a -52 dBm sine-wave input is below 8e-7 when transmitting/receiving 5 Gb/s data. The transceiver is powered by 1.0 V and 1.2 V supply （except the phase-frequency detector and charge-pump in the frequency synthesizer which are powered by 2.5 V supply） and con- sumes 135 mW in TX mode and 176 mW in RX mode.
