This paper proposes a novel modified uni-traveling-carrier photodiode(MUTC-PD)featuring an electric field regulation layer:a p-type doped thin layer inserted behind the PD’s n-doped cliff layer.This electric field re...This paper proposes a novel modified uni-traveling-carrier photodiode(MUTC-PD)featuring an electric field regulation layer:a p-type doped thin layer inserted behind the PD’s n-doped cliff layer.This electric field regulation layer enhances the PD’s performance by not only reducing and smoothing the electric field intensity in the collector layer,allowing photo-generated electrons to transit at peak drift velocity,but also improving the electric field intensity in the depleted absorber layer and optimizing the photo-generated carriers’saturated transit performance.Additionally,the transport characteristics of the peak drift velocity of photogenerated electrons in the device’s collection layer can be used to optimize its parasitic characteristics.The electron’s peak drift velocity compensates for the lost transit time.Thus improving the 3 dB bandwidth of the PD’s photo response.Finally obtains a MUTC-PD with a 3 dB bandwidth of 68 GHz at a responsivity of 0.502 A/W,making it suitable for 100 Gbit/s optical receivers.展开更多
基金The Joint Laboratory of Quantum Optoelectronics and the Theory of Bivergentum and Beijing International Scientific and Technological Cooperation Base of Information Optoelectronics and Nanoheterogeneous Structure,the National Natural and Science Foundation of China(Nos.61574019,61674018,61674020)the Fund of the State Key Laboratory of Information Photonics and Optical Communications,the Specialized Research Fund for the Doctoral Program of Higher Education of China(No.20130005130001)
文摘This paper proposes a novel modified uni-traveling-carrier photodiode(MUTC-PD)featuring an electric field regulation layer:a p-type doped thin layer inserted behind the PD’s n-doped cliff layer.This electric field regulation layer enhances the PD’s performance by not only reducing and smoothing the electric field intensity in the collector layer,allowing photo-generated electrons to transit at peak drift velocity,but also improving the electric field intensity in the depleted absorber layer and optimizing the photo-generated carriers’saturated transit performance.Additionally,the transport characteristics of the peak drift velocity of photogenerated electrons in the device’s collection layer can be used to optimize its parasitic characteristics.The electron’s peak drift velocity compensates for the lost transit time.Thus improving the 3 dB bandwidth of the PD’s photo response.Finally obtains a MUTC-PD with a 3 dB bandwidth of 68 GHz at a responsivity of 0.502 A/W,making it suitable for 100 Gbit/s optical receivers.
