Thin film light-emitting diodes with organic/inorganic heterostructure in which ZnO:Zn layer was used as electron transporting and hole blocking layer, PDDOPV, Poly(2,5- Didodecyloxy-1,4 Phenylenevinylene ) was used a...Thin film light-emitting diodes with organic/inorganic heterostructure in which ZnO:Zn layer was used as electron transporting and hole blocking layer, PDDOPV, Poly(2,5- Didodecyloxy-1,4 Phenylenevinylene ) was used as hole transport and emission layer have been successfully prepared. Comparing to single layer device, the luminescent efficiency of bilayer device is improved about twenty-six times, the emission spectrum’s peak wavelength shifts to short wavelength, the half width at full maximum (HWFM) widens. The improvement of luminescent efficiency is due to the insertion of ZnO:Zn layer.展开更多
利用 X 射线衍射(XRD),X 射线摇摆曲线(XRC)和 X 射线光电子能谱(XPS)分析方法对氧离子束辅助激光淀积生长的 ZnO/Si 异质结薄膜进行了分析。结果表明:用该法可生长出高度 c 轴单一取向 ZnO 薄膜,XRC 的半高宽度(FWHM)仅为2.918°...利用 X 射线衍射(XRD),X 射线摇摆曲线(XRC)和 X 射线光电子能谱(XPS)分析方法对氧离子束辅助激光淀积生长的 ZnO/Si 异质结薄膜进行了分析。结果表明:用该法可生长出高度 c 轴单一取向 ZnO 薄膜,XRC 的半高宽度(FWHM)仅为2.918°。表明此生长方法经优化,可生长出单晶质量很好的 ZnO/Si 薄膜。展开更多
文摘Thin film light-emitting diodes with organic/inorganic heterostructure in which ZnO:Zn layer was used as electron transporting and hole blocking layer, PDDOPV, Poly(2,5- Didodecyloxy-1,4 Phenylenevinylene ) was used as hole transport and emission layer have been successfully prepared. Comparing to single layer device, the luminescent efficiency of bilayer device is improved about twenty-six times, the emission spectrum’s peak wavelength shifts to short wavelength, the half width at full maximum (HWFM) widens. The improvement of luminescent efficiency is due to the insertion of ZnO:Zn layer.
文摘利用 X 射线衍射(XRD),X 射线摇摆曲线(XRC)和 X 射线光电子能谱(XPS)分析方法对氧离子束辅助激光淀积生长的 ZnO/Si 异质结薄膜进行了分析。结果表明:用该法可生长出高度 c 轴单一取向 ZnO 薄膜,XRC 的半高宽度(FWHM)仅为2.918°。表明此生长方法经优化,可生长出单晶质量很好的 ZnO/Si 薄膜。
