Nanostructured BN and BN-Co films with Cu,Co,Au as the top electrodes,and Pt as the bottom electrodes were grown by magnetron sputtering.Both BN samples and BN-Co ones show bipolar resistive switching behaviors.For th...Nanostructured BN and BN-Co films with Cu,Co,Au as the top electrodes,and Pt as the bottom electrodes were grown by magnetron sputtering.Both BN samples and BN-Co ones show bipolar resistive switching behaviors.For the sample with active Cu as the top electrode,the formation and rupture of metallic Cu conductive filaments can explain the resistive switching behavior;for the other samples,the generation and annihilation of nitrogen vacancies under the electric stimuli may contribute to the occurrence of resistive switching.Taking advantage of the formed and broken Co-N bonds during resistive switching,the saturation magnetization of the BN-Co films can be modulated.Thus,it investigated the resistive switching behavior of BN and BN-Co materials in this work.Similar to that of oxide materials,the resistive switching behaviors of the nitrides may be attributed to the movement of cations or anions within the dielectric or electrodes during the application of voltage.Additionally,ion migration may lead to the formation or breaking of Co-N bonds,which can effectively regulate the magnetism of BN-Co materials.This study extends resistive switching materials to nitrides,enabling the regulation of magnetism along with resistance changes,thus providing insights for the design of novel voltage-controlled magnetic devices and achieving multi-functionality.展开更多
Significant changes in spontaneous potential and exciting currents are observed during water and grout injection in a simulated porous media. Obvious correlations between the seepage flow field and the electric field ...Significant changes in spontaneous potential and exciting currents are observed during water and grout injection in a simulated porous media. Obvious correlations between the seepage flow field and the electric field in the porous media are identified.In this work, a detailed experimental study of geoelectric field variation occurring in water migration was reported by analyzing water and grout injection processes in a simulated porous media. The spontaneous potential varies linearly with the thickness of unsaturated porous media. Very interestingly, the spontaneous potential generated in the second grout injection exhibits some"memory" of previous grouting paths. The decreases in spontaneous potential observed during grout injection is very probably due to that the spontaneous potential variations are primarily caused by electro-filtration potential, as indicated by the far larger viscosity of grout compared to that of water. The geoelectric response can be utilized to effectively identify the grouting paths in water-bearing rocks.展开更多
文摘Nanostructured BN and BN-Co films with Cu,Co,Au as the top electrodes,and Pt as the bottom electrodes were grown by magnetron sputtering.Both BN samples and BN-Co ones show bipolar resistive switching behaviors.For the sample with active Cu as the top electrode,the formation and rupture of metallic Cu conductive filaments can explain the resistive switching behavior;for the other samples,the generation and annihilation of nitrogen vacancies under the electric stimuli may contribute to the occurrence of resistive switching.Taking advantage of the formed and broken Co-N bonds during resistive switching,the saturation magnetization of the BN-Co films can be modulated.Thus,it investigated the resistive switching behavior of BN and BN-Co materials in this work.Similar to that of oxide materials,the resistive switching behaviors of the nitrides may be attributed to the movement of cations or anions within the dielectric or electrodes during the application of voltage.Additionally,ion migration may lead to the formation or breaking of Co-N bonds,which can effectively regulate the magnetism of BN-Co materials.This study extends resistive switching materials to nitrides,enabling the regulation of magnetism along with resistance changes,thus providing insights for the design of novel voltage-controlled magnetic devices and achieving multi-functionality.
基金Project(2013CB036003)supported by the National Basic Research,Program of ChinaProject(2010QNA54)Fundamental Research Funds for the Central Universities,ChinaProject supported by the Priority Academic Program Development of Jiangsu Higher Education Institutions,China
文摘Significant changes in spontaneous potential and exciting currents are observed during water and grout injection in a simulated porous media. Obvious correlations between the seepage flow field and the electric field in the porous media are identified.In this work, a detailed experimental study of geoelectric field variation occurring in water migration was reported by analyzing water and grout injection processes in a simulated porous media. The spontaneous potential varies linearly with the thickness of unsaturated porous media. Very interestingly, the spontaneous potential generated in the second grout injection exhibits some"memory" of previous grouting paths. The decreases in spontaneous potential observed during grout injection is very probably due to that the spontaneous potential variations are primarily caused by electro-filtration potential, as indicated by the far larger viscosity of grout compared to that of water. The geoelectric response can be utilized to effectively identify the grouting paths in water-bearing rocks.
