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AlGaN/GaN HEMT材料外延技术研究
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作者 杨红伟 刘英斌 《微纳电子技术》 CAS 2007年第4期186-189,共4页
采用低压MOCVD技术在蓝宝石和SiC衬底上生长了本征GaN和AlGaN/GaN HEMT结构材料。生长过程中采用了EpiTUNEⅡ在位监测技术,对材料生长工艺进行了模型分析以及优化控制。在获得具有良好表面形貌、晶体质量以及光荧光谱的GaN本征材料基础... 采用低压MOCVD技术在蓝宝石和SiC衬底上生长了本征GaN和AlGaN/GaN HEMT结构材料。生长过程中采用了EpiTUNEⅡ在位监测技术,对材料生长工艺进行了模型分析以及优化控制。在获得具有良好表面形貌、晶体质量以及光荧光谱的GaN本征材料基础上,生长了AlGaN/GaN HEMT结构材料,获得了良好的2DEG性能。 展开更多
关键词 金属有机物化学气相淀积 蓝宝石 碳化硅 高电子迁移率晶体管 在位监测
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Stress verification of a TLP under extreme wave environment
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作者 闫发锁 张大刚 +1 位作者 孙丽萍 戴仰山 《Journal of Marine Science and Application》 2009年第2期132-136,共5页
Stress response of a tension leg platform (TLP) in extreme environments was investigated in this paper. A location on one of the gussets was selected as the object point, where directional stresses were numerically ... Stress response of a tension leg platform (TLP) in extreme environments was investigated in this paper. A location on one of the gussets was selected as the object point, where directional stresses were numerically simulated and also experimentally verified by a strain gage. Environmental loading and the platform's structural strength were analyzed in accordance with industrial standards, utilizing linear wave theory and the finite element method (FEM). The fast Fourier transform technique was used to calculate the stress response amplitude operators (RAO) from the records of measurements. A comparison was performed between the stress RAO of the numerical simulation and that of the actual measurements. The results indicated that the stress RAO of the numerical simulation fitted well with measured data at specified wave headings with different periods. 展开更多
关键词 TLP stress RAO extreme environment numerical simulation monitoring measurement
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