CaO-loaded solid base used in transesterification of rape oil was prepared by loading CaO on MgO. The base strength and content of the solid base at different preparation conditions were analyzed. The solid base belon...CaO-loaded solid base used in transesterification of rape oil was prepared by loading CaO on MgO. The base strength and content of the solid base at different preparation conditions were analyzed. The solid base belonged to superbase with the base strength of 27.0 < H- < 37.0. After dipped in 22.4% Ca(AC)2 for 1h and calcined at 700℃ for 24h, highest basic content of the solid base were achieved (H- >9.3, 25.68 mmol/g). The solid base exhibited high catalytic activity in transesterification of rape oil into bio-diesel, and the rape oil conversion reached 97.95%.展开更多
本文研制了一种基于磁控溅射掺镁氧化锌(Mg_xZn_(1-x)O)压电薄膜的S波段固体装配型体声波谐振器(SMR-FBAR)。相比传统的氧化锌(ZnO)薄膜,Mg_xZn_(1-x)O具有高纵波声速,高电阻率优点,而且Mg原子以替位或填隙的方式进入晶格,没有改变ZnO...本文研制了一种基于磁控溅射掺镁氧化锌(Mg_xZn_(1-x)O)压电薄膜的S波段固体装配型体声波谐振器(SMR-FBAR)。相比传统的氧化锌(ZnO)薄膜,Mg_xZn_(1-x)O具有高纵波声速,高电阻率优点,而且Mg原子以替位或填隙的方式进入晶格,没有改变ZnO的铅锌矿结构。通过优化磁控溅射参数的方法,获得了c轴方向生长良好的Mg_xZn_(1-x)O薄膜,并成功制得了串联谐振频率以及并联谐振频率分别在2.416 GHz和2.456 GHz的谐振器,测得其有效机电耦合系数为4.081%,回波损耗(S11)为-23.89 d B。这种SMR机械强度高、可靠性高、尺寸小,具有可立体集成到CMOS芯片表面的优势。展开更多
文摘CaO-loaded solid base used in transesterification of rape oil was prepared by loading CaO on MgO. The base strength and content of the solid base at different preparation conditions were analyzed. The solid base belonged to superbase with the base strength of 27.0 < H- < 37.0. After dipped in 22.4% Ca(AC)2 for 1h and calcined at 700℃ for 24h, highest basic content of the solid base were achieved (H- >9.3, 25.68 mmol/g). The solid base exhibited high catalytic activity in transesterification of rape oil into bio-diesel, and the rape oil conversion reached 97.95%.
文摘本文研制了一种基于磁控溅射掺镁氧化锌(Mg_xZn_(1-x)O)压电薄膜的S波段固体装配型体声波谐振器(SMR-FBAR)。相比传统的氧化锌(ZnO)薄膜,Mg_xZn_(1-x)O具有高纵波声速,高电阻率优点,而且Mg原子以替位或填隙的方式进入晶格,没有改变ZnO的铅锌矿结构。通过优化磁控溅射参数的方法,获得了c轴方向生长良好的Mg_xZn_(1-x)O薄膜,并成功制得了串联谐振频率以及并联谐振频率分别在2.416 GHz和2.456 GHz的谐振器,测得其有效机电耦合系数为4.081%,回波损耗(S11)为-23.89 d B。这种SMR机械强度高、可靠性高、尺寸小,具有可立体集成到CMOS芯片表面的优势。
