A simulation approach is developed to obtain the linear energy transfer(LET) spectrum of all secondary ions and predict single event upset(SEU) occurrence induced by neutron in memory devices. Neutron reaction channel...A simulation approach is developed to obtain the linear energy transfer(LET) spectrum of all secondary ions and predict single event upset(SEU) occurrence induced by neutron in memory devices. Neutron reaction channels, secondary ion species and energy ranges, and LET calculation method are introduced respectively. Experimental results of neutron induced SEU effects on static random access memory(SRAM) and programmable read only memory(EEPROM) are presented to confirm the validity of the simulation results.展开更多
文摘用户参数存储是电力电子装置一个重要技术环节,TI TMS320F2812是被用做变流器数字控制的主流芯片之一。本文介绍了一种基于TMS320F2812芯片的串行外设接口(SPI)模块与串行EEPROM X25650AF的数据保存电路。重点给出了数据存储和读取的子程序流程图,C语言代码,以及调试步骤。最后,将此存储系统成功的应用于一种有源电力滤波器(active power filter,APF)的用户参数存储,实现了APF选择性谐波补偿功能记录。
基金Supported by National Natural Science Foundation of China(No.11235008)
文摘A simulation approach is developed to obtain the linear energy transfer(LET) spectrum of all secondary ions and predict single event upset(SEU) occurrence induced by neutron in memory devices. Neutron reaction channels, secondary ion species and energy ranges, and LET calculation method are introduced respectively. Experimental results of neutron induced SEU effects on static random access memory(SRAM) and programmable read only memory(EEPROM) are presented to confirm the validity of the simulation results.
