Voltage profiles of feeders with the connection of distributed generations(DGs) were investigated.A unified typical load distribution model was established.Based on this model,exact expressions of feeder voltage profi...Voltage profiles of feeders with the connection of distributed generations(DGs) were investigated.A unified typical load distribution model was established.Based on this model,exact expressions of feeder voltage profile with single and double DGs were derived and used to analyze the impact of DG's location and capacity on the voltage profile quantitatively.Then,a general formula of the voltage profile was derived.The limitation of single DG and necessity of multiple DGs for voltage regulation were also discussed.Through the simulation,voltage profiles of feeders with single and double DGs were compared.The voltage excursion rate is 7.40% for only one DG,while 2.48% and 2.36% for double DGs.It is shown that the feeder voltage can be retained in a more appropriate range with multiple DGs than with only one DG.Distributing the total capacity of DGs is better than concentrating it at one point.展开更多
The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logar...The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logarithm of illumination intensity under usual illumination. There are two critical values of the interface state density(D_(it)) for the open-circuit voltage(V_(OC)), D_(it)^(crit,1) and D_(it)crit,2(a few 1010 cm^(-2)·e V^(-1)). V_(OC) decreases remarkably when D_(it) is higher than D_(it)^(crit,1). To achieve high V_(OC), the interface states should reduce down to a few 1010 cm^(-2)·e V^(-1). Due to the difference between the effective density of states in the conduction and valence band edges of c-Si, the open-circuit voltage of a-Si:H/c-Si heterojunction cells fabricated on n-type c-Si wafers is about 22 mV higher than that fabricated on p-type c-Si wafers at the same case. V_(OC) decreases with decreasing the a-Si:H doping concentration at low doping level since the electric field over the c-Si depletion region is reduced at low doping level. Therefore, the a-Si:H layer should be doped higher than a critical value of 5×10^(18) cm^(-3) to achieve high V_(OC).展开更多
The solid state transformer(SST) can be viewed as an energy router in energy internet. This work presents sliding mode control(SMC) to improve dynamic state and steady state performance of a three-stage(rectifier stag...The solid state transformer(SST) can be viewed as an energy router in energy internet. This work presents sliding mode control(SMC) to improve dynamic state and steady state performance of a three-stage(rectifier stage, isolated stage and inverter stage) SST for energy internet. SMC with three-level hysteresis sliding functions is presented to control the input current of rectifier stage and output voltage of inverter stage to improve the robustness under external disturbance and parametric uncertainties and reduce the switching frequency. A modified feedback linearization technique using isolated stage simplified model is presented to achieve satisfactory regulation of output voltage of the isolated stage. The system is tested for steady state operation, reactive power control, dynamic load change and voltage sag simulations, respectively. The switching model of SST is implemented in Matlab/ Simulink to verify the SST control algorithms.展开更多
基金Projects(60904101,60972164) supported by the National Natural Science Foundation of ChinaProject(N090404009) supported by the Fundamental Research Funds for the Central UniversitiesProject(20090461187) supported by China Postdoctoral Science Foundation
文摘Voltage profiles of feeders with the connection of distributed generations(DGs) were investigated.A unified typical load distribution model was established.Based on this model,exact expressions of feeder voltage profile with single and double DGs were derived and used to analyze the impact of DG's location and capacity on the voltage profile quantitatively.Then,a general formula of the voltage profile was derived.The limitation of single DG and necessity of multiple DGs for voltage regulation were also discussed.Through the simulation,voltage profiles of feeders with single and double DGs were compared.The voltage excursion rate is 7.40% for only one DG,while 2.48% and 2.36% for double DGs.It is shown that the feeder voltage can be retained in a more appropriate range with multiple DGs than with only one DG.Distributing the total capacity of DGs is better than concentrating it at one point.
基金Project(11374094)supported by the National Natural Science Foundation of ChinaProject(2013HZX23)supported by Natural Science Foundation of Hunan University of Technology,ChinaProject(2015JJ3060)supported by Natural Science Foundation of Hunan Province of China
文摘The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logarithm of illumination intensity under usual illumination. There are two critical values of the interface state density(D_(it)) for the open-circuit voltage(V_(OC)), D_(it)^(crit,1) and D_(it)crit,2(a few 1010 cm^(-2)·e V^(-1)). V_(OC) decreases remarkably when D_(it) is higher than D_(it)^(crit,1). To achieve high V_(OC), the interface states should reduce down to a few 1010 cm^(-2)·e V^(-1). Due to the difference between the effective density of states in the conduction and valence band edges of c-Si, the open-circuit voltage of a-Si:H/c-Si heterojunction cells fabricated on n-type c-Si wafers is about 22 mV higher than that fabricated on p-type c-Si wafers at the same case. V_(OC) decreases with decreasing the a-Si:H doping concentration at low doping level since the electric field over the c-Si depletion region is reduced at low doping level. Therefore, the a-Si:H layer should be doped higher than a critical value of 5×10^(18) cm^(-3) to achieve high V_(OC).
基金Projects(61403404,71571187)supported by the National Natural Science Foundation of China
文摘The solid state transformer(SST) can be viewed as an energy router in energy internet. This work presents sliding mode control(SMC) to improve dynamic state and steady state performance of a three-stage(rectifier stage, isolated stage and inverter stage) SST for energy internet. SMC with three-level hysteresis sliding functions is presented to control the input current of rectifier stage and output voltage of inverter stage to improve the robustness under external disturbance and parametric uncertainties and reduce the switching frequency. A modified feedback linearization technique using isolated stage simplified model is presented to achieve satisfactory regulation of output voltage of the isolated stage. The system is tested for steady state operation, reactive power control, dynamic load change and voltage sag simulations, respectively. The switching model of SST is implemented in Matlab/ Simulink to verify the SST control algorithms.
