This paper delves into the theoretical mechanisms of the electronic structure and optical properties of aluminum-based semiconductors(AlX,X=N,P,As,Sb)and indium-based semiconductors(InX,X=N,P,As,Sb)as potential materi...This paper delves into the theoretical mechanisms of the electronic structure and optical properties of aluminum-based semiconductors(AlX,X=N,P,As,Sb)and indium-based semiconductors(InX,X=N,P,As,Sb)as potential materials for optical devices.Band structure calculations reveal that,except for InSb,all other compounds are direct bandgap semiconductors,with AlN exhibiting a bandgap of 3.245 eV.The valence band maximum of these eight compounds primarily stems from the p-orbitals of Al/In and X.In contrast,the conduction band minimum is influenced by all orbitals,with a predominant contribution from the p-orbitals.The static dielectric constant increased with the expansion of the unit cell volume.Compared to AlX and InX with larger X atoms,AlN and InN showed broader absorption spectra in the near-ultraviolet region and higher photoelectric conductance.Regarding mechanical properties,AlN and InN displayed greater shear and bulk modulus than the other compounds.Moreover,among these eight crystal types,a higher modulus was associated with a lower light loss function value,indicating that AlN and InN have superior transmission efficiency and a wider spectral range in optoelectronic material applications.展开更多
O438 99053157信息高科技领域中的半导体光电子学=Semiconductoroptoelectronics in the field of informationhigh technology[刊,中]/王启明(中科院半导体所.北京(100083))//半导体学报.—1998,19(10).—721—728从信息传输与处理、...O438 99053157信息高科技领域中的半导体光电子学=Semiconductoroptoelectronics in the field of informationhigh technology[刊,中]/王启明(中科院半导体所.北京(100083))//半导体学报.—1998,19(10).—721—728从信息传输与处理、入网与交换、存储与读出、获取与显示等重要技术领域评述介绍了当代信息高科技的最新进展与未来的需求,揭示半导体光电子学在未来信息高科技发展中的关键作用与地位,以及当今研究与发展的主流方向。参4(方舟)O438 99053158信息战与信息防护=Information war and informationprotection[刊,中]/牛广有(电子工业部第53研究所.辽宁,锦州(121000))//光电对抗与无源干扰.—1998,(3).—48—50。展开更多
文摘This paper delves into the theoretical mechanisms of the electronic structure and optical properties of aluminum-based semiconductors(AlX,X=N,P,As,Sb)and indium-based semiconductors(InX,X=N,P,As,Sb)as potential materials for optical devices.Band structure calculations reveal that,except for InSb,all other compounds are direct bandgap semiconductors,with AlN exhibiting a bandgap of 3.245 eV.The valence band maximum of these eight compounds primarily stems from the p-orbitals of Al/In and X.In contrast,the conduction band minimum is influenced by all orbitals,with a predominant contribution from the p-orbitals.The static dielectric constant increased with the expansion of the unit cell volume.Compared to AlX and InX with larger X atoms,AlN and InN showed broader absorption spectra in the near-ultraviolet region and higher photoelectric conductance.Regarding mechanical properties,AlN and InN displayed greater shear and bulk modulus than the other compounds.Moreover,among these eight crystal types,a higher modulus was associated with a lower light loss function value,indicating that AlN and InN have superior transmission efficiency and a wider spectral range in optoelectronic material applications.
文摘O438 99053157信息高科技领域中的半导体光电子学=Semiconductoroptoelectronics in the field of informationhigh technology[刊,中]/王启明(中科院半导体所.北京(100083))//半导体学报.—1998,19(10).—721—728从信息传输与处理、入网与交换、存储与读出、获取与显示等重要技术领域评述介绍了当代信息高科技的最新进展与未来的需求,揭示半导体光电子学在未来信息高科技发展中的关键作用与地位,以及当今研究与发展的主流方向。参4(方舟)O438 99053158信息战与信息防护=Information war and informationprotection[刊,中]/牛广有(电子工业部第53研究所.辽宁,锦州(121000))//光电对抗与无源干扰.—1998,(3).—48—50。
