O462.3 97021276TE光电阴极制作技术的研究=Research on thetechnology for manufacturing TE photocathodes[刊,中]/李相民,侯洵,程军,王存让(中科院西安光机所半导体光电器件研究室.陕西,西安(710061))//半导体技术.—1995,(4).
O484.5 2001010482半导体光电薄膜的分析和检测=Analysis andinspection of semiconductor optoelectronicfilms[刊,中]/罗江财(重庆光电技术研究所.重庆(400060))∥半导体光电.-2000,21(增刊).-81-83半导体光电薄膜的制备,是半导体光...O484.5 2001010482半导体光电薄膜的分析和检测=Analysis andinspection of semiconductor optoelectronicfilms[刊,中]/罗江财(重庆光电技术研究所.重庆(400060))∥半导体光电.-2000,21(增刊).-81-83半导体光电薄膜的制备,是半导体光电器件最重要和最基本的工艺过程。半导体光电薄膜的分析和检测是器件开发中必须首先要解决的重要问题之一。介绍了半导体光电薄膜的分析和检测以及分析技术和仪器设备的发展现状。图3表2(任延同)0484.5 2001010483用X射线衍射仪测试PtSi膜=Measurement ofPtSi films by X-ray diffractometers[刊。展开更多
TH744.1 2001010108微斑光电流谱和光反射谱的自动测量系统=Automatic measurement of microspotphotocurrent and reflection spectra[刊,中]/张培宁,张世林,郭维廉(天津大学电子信息工程学院.天津(300072)),林世鸣,陈弘达∥半导体光电...TH744.1 2001010108微斑光电流谱和光反射谱的自动测量系统=Automatic measurement of microspotphotocurrent and reflection spectra[刊,中]/张培宁,张世林,郭维廉(天津大学电子信息工程学院.天津(300072)),林世鸣,陈弘达∥半导体光电.-2000,21(1).-69-70叙述了为测量半导体光电器件的光电流谱和光反射谱所构成的自动测量系统及其数据处理方法。图4(任延同)TH744.1 2001010109用于FTS干涉图信号处理的多阶带通滤波器研究=Multistage bandpass filter used forinterferogram signal processing of展开更多
Metal organic chemical vapor deposition(MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heati...Metal organic chemical vapor deposition(MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heating device and thermal control technology are needed for each new reactor design. By using resistance-wire heating MOCVD reaction chamber model, thermal analysis and structure optimization of the reactor were developed from the vertical position and the distance between coils of the resistance-wire heater. It is indicated that, within a certain range, the average temperature of the graphite susceptor varies linearly with the vertical distance of heater to susceptor, and with the changed distances between the coils; furthermore, single resistance-wire heater should be placed loosely in the internal and tightly in the external. The modulate accuracy of the temperature field approximately equals the change of the average temperature corresponding to the change of the coil position.展开更多
文摘O462.3 97021276TE光电阴极制作技术的研究=Research on thetechnology for manufacturing TE photocathodes[刊,中]/李相民,侯洵,程军,王存让(中科院西安光机所半导体光电器件研究室.陕西,西安(710061))//半导体技术.—1995,(4).
文摘O484.5 2001010482半导体光电薄膜的分析和检测=Analysis andinspection of semiconductor optoelectronicfilms[刊,中]/罗江财(重庆光电技术研究所.重庆(400060))∥半导体光电.-2000,21(增刊).-81-83半导体光电薄膜的制备,是半导体光电器件最重要和最基本的工艺过程。半导体光电薄膜的分析和检测是器件开发中必须首先要解决的重要问题之一。介绍了半导体光电薄膜的分析和检测以及分析技术和仪器设备的发展现状。图3表2(任延同)0484.5 2001010483用X射线衍射仪测试PtSi膜=Measurement ofPtSi films by X-ray diffractometers[刊。
文摘TH744.1 2001010108微斑光电流谱和光反射谱的自动测量系统=Automatic measurement of microspotphotocurrent and reflection spectra[刊,中]/张培宁,张世林,郭维廉(天津大学电子信息工程学院.天津(300072)),林世鸣,陈弘达∥半导体光电.-2000,21(1).-69-70叙述了为测量半导体光电器件的光电流谱和光反射谱所构成的自动测量系统及其数据处理方法。图4(任延同)TH744.1 2001010109用于FTS干涉图信号处理的多阶带通滤波器研究=Multistage bandpass filter used forinterferogram signal processing of
基金Projects(61376076,61274026,61377024)supported by the National Natural Science Foundation of ChinaProjects(12C0108,13C321)supported by the Scientific Research Fund of Hunan Provincial Education Department,ChinaProjects(2013FJ2011,2013FJ4232)supported by the Science and Technology Plan of Hunan Province,China
文摘Metal organic chemical vapor deposition(MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heating device and thermal control technology are needed for each new reactor design. By using resistance-wire heating MOCVD reaction chamber model, thermal analysis and structure optimization of the reactor were developed from the vertical position and the distance between coils of the resistance-wire heater. It is indicated that, within a certain range, the average temperature of the graphite susceptor varies linearly with the vertical distance of heater to susceptor, and with the changed distances between the coils; furthermore, single resistance-wire heater should be placed loosely in the internal and tightly in the external. The modulate accuracy of the temperature field approximately equals the change of the average temperature corresponding to the change of the coil position.
