This work researched the impact of total dose irradiation on the threshold voltage of N-type metal oxide semiconductor field effect transistors(nMOSFETs) in silicon-on-insulator(SOI) technology.Using the subthreshold ...This work researched the impact of total dose irradiation on the threshold voltage of N-type metal oxide semiconductor field effect transistors(nMOSFETs) in silicon-on-insulator(SOI) technology.Using the subthreshold separation technology,the factor causing the threshold voltage shift was divided into two parts:trapped oxide charges and interface states,the effects of which are presented under irradiation.Furthermore,by analyzing the data,the threshold voltage shows a negative shift at first and then turns to positive shift when irradiation dose is lower.Additionally,the influence of the dose rate effects on threshold voltage is discussed.The research results show that the threshold voltage shift is more significant in low dose rate conditions,even for a low dose of100 krad(Si).The degeneration value of threshold voltage is 23.4%and 58.0%for the front-gate and the back-gate at the low dose rate,respectively.展开更多
22. 特邀论文:带铝盖铜垫的探测和线焊(InvitedPaper:Probing and Wire Bonding of AluminumCapped Copper Pads)-2002 International Relia-bility Physics Symposium pp. 140-143. 微电子制造已经开始发展并促进了用铜互连为首选金属...22. 特邀论文:带铝盖铜垫的探测和线焊(InvitedPaper:Probing and Wire Bonding of AluminumCapped Copper Pads)-2002 International Relia-bility Physics Symposium pp. 140-143. 微电子制造已经开始发展并促进了用铜互连为首选金属的圆片制造工艺过程。由于裸铜线焊接被认为不是可靠和高产量的工艺过程,因而集成电路制造商在铜的顶部使用了铝盖,以方便焊接。展开更多
基金supported by the Project of National Natural Science Foundation of China(Grant Nos.61376099,11235008,61434007)the Specialized Research Fund for the Doctoral Program of High Education(Grant No.20130203130002)
文摘This work researched the impact of total dose irradiation on the threshold voltage of N-type metal oxide semiconductor field effect transistors(nMOSFETs) in silicon-on-insulator(SOI) technology.Using the subthreshold separation technology,the factor causing the threshold voltage shift was divided into two parts:trapped oxide charges and interface states,the effects of which are presented under irradiation.Furthermore,by analyzing the data,the threshold voltage shows a negative shift at first and then turns to positive shift when irradiation dose is lower.Additionally,the influence of the dose rate effects on threshold voltage is discussed.The research results show that the threshold voltage shift is more significant in low dose rate conditions,even for a low dose of100 krad(Si).The degeneration value of threshold voltage is 23.4%and 58.0%for the front-gate and the back-gate at the low dose rate,respectively.
文摘22. 特邀论文:带铝盖铜垫的探测和线焊(InvitedPaper:Probing and Wire Bonding of AluminumCapped Copper Pads)-2002 International Relia-bility Physics Symposium pp. 140-143. 微电子制造已经开始发展并促进了用铜互连为首选金属的圆片制造工艺过程。由于裸铜线焊接被认为不是可靠和高产量的工艺过程,因而集成电路制造商在铜的顶部使用了铝盖,以方便焊接。
