Colloidal quantum dots(CQDs)are affected by the quantum confinement effect,which makes their bandgap tunable.This characteristic allows these materials to cover a broader infrared spectrum,providing a costeffective al...Colloidal quantum dots(CQDs)are affected by the quantum confinement effect,which makes their bandgap tunable.This characteristic allows these materials to cover a broader infrared spectrum,providing a costeffective alternative to traditional infrared detector technology.Recently,thanks to the solution processing properties of quantum dots and their ability to integrate with silicon-based readout circuits on a single chip,infrared detectors based on HgTe CQDs have shown great application prospects.However,facing the challenges of vertically stacked photovoltaic devices,such as barrier layer matching and film non-uniformity,most devices integrated with readout circuits still use a planar structure,which limits the efficiency of light absorption and the effective separation and collection of photo-generated carriers.Here,by synthesizing high-quality HgTe CQDs and precisely controlling the interface quality,we have successfully fabricated a photovoltaic detector based on HgTe and ZnO QDs.At a working temperature of 80 K,this detector achieved a low dark current of 5.23×10^(-9)A cm^(-2),a high rectification ratio,and satisfactory detection sensitivity.This work paves a new way for the vertical integration of HgTe CQDs on silicon-based readout circuits,demonstrating their great potential in the field of high-performance infrared detection.展开更多
The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum ...The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum dot(QDs)materials in a simple and convenient way to form a heterogeneous structure.Various performance enhancements have been realized through the formation of typeⅡenergy bands in heterostructures,opening up new research directions for the future development of photodetector devices.This work successfully fabricated a high-sensitivity photodetector based on WS_(2)QDs/GaAs NWs heterostructure.Under 660 nm laser excitation,the photodetector exhibits a responsivity of 368.07 A/W,a detectivity of 2.7×10^(12)Jones,an external quantum efficiency of 6.47×10^(2)%,a low-noise equivalent power of 2.27×10^(-17)W·Hz^(-1/2),a response time of 0.3 s,and a recovery time of 2.12 s.This study provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs NWs.展开更多
基金Supported by National Key Research and Development Program in the 14th five year plan(2021YFA1200700)Strategic Priority Re⁃search Program of the Chinese Academy of Sciences(XDB0580000)Natural Science Foundation of China(62025405,62104235,62105348).
文摘Colloidal quantum dots(CQDs)are affected by the quantum confinement effect,which makes their bandgap tunable.This characteristic allows these materials to cover a broader infrared spectrum,providing a costeffective alternative to traditional infrared detector technology.Recently,thanks to the solution processing properties of quantum dots and their ability to integrate with silicon-based readout circuits on a single chip,infrared detectors based on HgTe CQDs have shown great application prospects.However,facing the challenges of vertically stacked photovoltaic devices,such as barrier layer matching and film non-uniformity,most devices integrated with readout circuits still use a planar structure,which limits the efficiency of light absorption and the effective separation and collection of photo-generated carriers.Here,by synthesizing high-quality HgTe CQDs and precisely controlling the interface quality,we have successfully fabricated a photovoltaic detector based on HgTe and ZnO QDs.At a working temperature of 80 K,this detector achieved a low dark current of 5.23×10^(-9)A cm^(-2),a high rectification ratio,and satisfactory detection sensitivity.This work paves a new way for the vertical integration of HgTe CQDs on silicon-based readout circuits,demonstrating their great potential in the field of high-performance infrared detection.
文摘The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum dot(QDs)materials in a simple and convenient way to form a heterogeneous structure.Various performance enhancements have been realized through the formation of typeⅡenergy bands in heterostructures,opening up new research directions for the future development of photodetector devices.This work successfully fabricated a high-sensitivity photodetector based on WS_(2)QDs/GaAs NWs heterostructure.Under 660 nm laser excitation,the photodetector exhibits a responsivity of 368.07 A/W,a detectivity of 2.7×10^(12)Jones,an external quantum efficiency of 6.47×10^(2)%,a low-noise equivalent power of 2.27×10^(-17)W·Hz^(-1/2),a response time of 0.3 s,and a recovery time of 2.12 s.This study provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs NWs.
