High purity （99.999% or 5N, mass fraction） indium （In） was obtained through vacuum distillation using a 2N （99%） In as input material under a dynamic vacuum of 5 Pa. The glow discharge mass spectrometry （GDMS）...High purity （99.999% or 5N, mass fraction） indium （In） was obtained through vacuum distillation using a 2N （99%） In as input material under a dynamic vacuum of 5 Pa. The glow discharge mass spectrometry （GDMS） was applied for the analysis of input material and the distilled indium. The results indicate that high-volatile impurities namely Cd, Zn, T1 and Pb can be removed from the indium matrix at the low fraction stage of 1 223 K for 120 min; Low-volatile impurities such as Fe, Ni, Cu, Sn can be reduced at the high fraction stage of 1 323 K for 120 min. The separation coefficient ,8i and activity coefficient Yi of impurities are calculated according to the experiments to fill the inadequate data of the thermodynamics.展开更多
基金Project(2009AA003) supported by Science and Technology Innovation Plan of Yunnan Province, China
文摘High purity （99.999% or 5N, mass fraction） indium （In） was obtained through vacuum distillation using a 2N （99%） In as input material under a dynamic vacuum of 5 Pa. The glow discharge mass spectrometry （GDMS） was applied for the analysis of input material and the distilled indium. The results indicate that high-volatile impurities namely Cd, Zn, T1 and Pb can be removed from the indium matrix at the low fraction stage of 1 223 K for 120 min; Low-volatile impurities such as Fe, Ni, Cu, Sn can be reduced at the high fraction stage of 1 323 K for 120 min. The separation coefficient ,8i and activity coefficient Yi of impurities are calculated according to the experiments to fill the inadequate data of the thermodynamics.
