Mechanical behaviors of granular materials are complicated and greatly influenced by the particle shape.Current,some composite approaches have been proposed for realistic particle shape modelling within discrete eleme...Mechanical behaviors of granular materials are complicated and greatly influenced by the particle shape.Current,some composite approaches have been proposed for realistic particle shape modelling within discrete element method(DEM),while they cannot give a good representation to the shape and mass properties of a real particle.In this work,a novel algorithm is developed to model an arbitrary particle using a cluster of non-overlapping disks.The algorithm mainly consists of two components:boundary filling and domain filling.In the boundary filling,some disks are placed along the boundary for a precise representation of the particle shape,and some more disks are placed in the domain to give an approximation to the mass properties of the particle in the domain filling.Besides,a simple method is proposed to correct the mass properties of a cluster after domain filling and reduce the number of the disks in a cluster for lower computational load.Moreover,it is another great merit of the algorithm that a cluster generated by the algorithm can be used to simulate the particle breakage because of no overlaps between the disks in a cluster.Finally,several examples are used to show the robust performance of the algorithm.A current FORTRAN version of the algorithm is available by contacting the author.展开更多
The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First...The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First,a numerical simulation study of transfer characteristic and gate threshold voltage in DG-TFET was reported.Then,a simple analytical model for DG-TFET gate threshold voltage VTG was built by solving quasi-two-dimensional Poisson equation in Si film.The model as a function of the drain voltage,the Si layer thickness,the gate length and the gate dielectric was discussed.It is shown that the proposed model is consistent with the simulation results.This model should be useful for further investigation of performance of circuits containing TFETs.展开更多
基金Project(2011CB013504)supported by the National Basic Research Program(973 Program)of ChinaProject(2013BAB06B01)supported by Key Projects in the National Science&Technology Pillar Program during the Twelfth Five-year Plan Period,China+1 种基金Projects(51309089,51479049)supported by National Natural Science Foundation of ChinaProject(487237)supported by Natural Sciences and Engineering Research Council of Canada
文摘Mechanical behaviors of granular materials are complicated and greatly influenced by the particle shape.Current,some composite approaches have been proposed for realistic particle shape modelling within discrete element method(DEM),while they cannot give a good representation to the shape and mass properties of a real particle.In this work,a novel algorithm is developed to model an arbitrary particle using a cluster of non-overlapping disks.The algorithm mainly consists of two components:boundary filling and domain filling.In the boundary filling,some disks are placed along the boundary for a precise representation of the particle shape,and some more disks are placed in the domain to give an approximation to the mass properties of the particle in the domain filling.Besides,a simple method is proposed to correct the mass properties of a cluster after domain filling and reduce the number of the disks in a cluster for lower computational load.Moreover,it is another great merit of the algorithm that a cluster generated by the algorithm can be used to simulate the particle breakage because of no overlaps between the disks in a cluster.Finally,several examples are used to show the robust performance of the algorithm.A current FORTRAN version of the algorithm is available by contacting the author.
基金Project(P140c090303110c0904)supported by NLAIC Research Fund,ChinaProject(JY0300122503)supported by the Research Fund for the Doctoral Program of Higher Education of China+1 种基金Projects(K5051225014,K5051225004)supported by the Fundamental Research Funds for the Central Universities,ChinaProject(2010JQ8008)supported by the Natural Science Basic Research Plan in Shaanxi Province of China
文摘The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First,a numerical simulation study of transfer characteristic and gate threshold voltage in DG-TFET was reported.Then,a simple analytical model for DG-TFET gate threshold voltage VTG was built by solving quasi-two-dimensional Poisson equation in Si film.The model as a function of the drain voltage,the Si layer thickness,the gate length and the gate dielectric was discussed.It is shown that the proposed model is consistent with the simulation results.This model should be useful for further investigation of performance of circuits containing TFETs.
