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Ethanol-assisted direct synthesis of wafer-scale nitrogen-doped graphene for III-nitride epitaxial growth
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作者 WEI Wen-ze GAO Xiang +4 位作者 YU Chao-jie SUN Xiao-li WEI Tong-bo JIA Li SUN Jing-yu 《新型炭材料(中英文)》 北大核心 2025年第3期678-687,共10页
Among the synthesis techniques for graphene,chemical vapor deposition(CVD)enables the direct growth of graphene films on insulating substrates.Its advantages include uniform coverage,high quality,scalability,and compa... Among the synthesis techniques for graphene,chemical vapor deposition(CVD)enables the direct growth of graphene films on insulating substrates.Its advantages include uniform coverage,high quality,scalability,and compatibility with industrial processes.Graphene is chemically inert and has a zero-bandgap which poses a problem for its use as a functional layer,and nitrogen doping has become an important way to overcome this.Post-plasma treatment has been explored for the synthesis of nitrogen-doped graphene,but the procedures are intricate and not suitable for large-scale production.We report the direct synthesis of nitrogen-doped graphene on a 4-inch sapphire wafer by ethanol-assisted CVD employing pyridine as the carbon feedstock,where the nitrogen comes from the pyridine and the hydroxyl group in ethanol improves the quality of the graphene produced.Additionally,the types of nitrogen dopant produced and their effects on III-nitride epitaxy were also investigated,resulting in the successful illumination of LED devices.This work presents an effective synthesis strategy for the preparation of nitrogen-doped graphene,and provides a foundation for designing graphene functional layers in optoelectronic devices. 展开更多
关键词 III-nitride epitaxy Direct synthesis Ethanol-assisted CVD LED devices Nitrogen-doped graphene
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