In this paper a fully parametrized finite element simulation model of the stator bar end is created using the COMSOL Multiphysics.The model allows conducting the comparison of different corona protection structures’d...In this paper a fully parametrized finite element simulation model of the stator bar end is created using the COMSOL Multiphysics.The model allows conducting the comparison of different corona protection structures’design,various materials properties,and finally optimizing the corona protection system.Several samples of SiC based nonlinear conductivity materials for corona protection were fabricated in laboratory and then investigated.The conductivity dependencies on electric field(0.05 to 1 kV/mm)and temperature(20 to 155℃)were measured.By comparing the heat-resistant grades of the corona protection material and the insulating material,the maximum working temperature of the corona protection material corresponds to the heat-resistant grade F of the insulating material.As the temperature increases,the nonlinear characteristics of the corona protection material in the experiment decrease dramatically,reducing the heat-resistant grade of the corona protection material.The decrease in the nonlinear characteristics of the corona protection material at the maximum operating temperature causes the maximum electric field strength at the end of the HV rotating machines end corona protection(ECP)exceeding the corona discharge electric field strength,resulting in corona phenomenon.展开更多
A novel grain boundary(GB) model characterized with different angles and positions in the nanowire was set up.By means of device simulator,the effects of grain boundary angle and location on the electrical performance...A novel grain boundary(GB) model characterized with different angles and positions in the nanowire was set up.By means of device simulator,the effects of grain boundary angle and location on the electrical performance of ZnO nanowire FET(Nanowire Field-Effect Transistor) with a wrap-around gate configuration,were explored.With the increase of the grain boundary angle,the electrical performance degrades gradually.When a grain boundary with a smaller angle,such as 5° GB,is located close to the source or drain electrode,the grain boundary is partially depleted by an electric field peak,which leads to the decrease of electron concentration and the degradation of transistor characteristics.When the 90° GB is located at the center of the nanowire,the action of the electric field is balanced out,so the electrical performance of transistor is better than that of the 90° GB located at the other positions.展开更多
文摘In this paper a fully parametrized finite element simulation model of the stator bar end is created using the COMSOL Multiphysics.The model allows conducting the comparison of different corona protection structures’design,various materials properties,and finally optimizing the corona protection system.Several samples of SiC based nonlinear conductivity materials for corona protection were fabricated in laboratory and then investigated.The conductivity dependencies on electric field(0.05 to 1 kV/mm)and temperature(20 to 155℃)were measured.By comparing the heat-resistant grades of the corona protection material and the insulating material,the maximum working temperature of the corona protection material corresponds to the heat-resistant grade F of the insulating material.As the temperature increases,the nonlinear characteristics of the corona protection material in the experiment decrease dramatically,reducing the heat-resistant grade of the corona protection material.The decrease in the nonlinear characteristics of the corona protection material at the maximum operating temperature causes the maximum electric field strength at the end of the HV rotating machines end corona protection(ECP)exceeding the corona discharge electric field strength,resulting in corona phenomenon.
基金Project(60876022) supported by the National Natural Science Foundation of ChinaProject(50925727) supported by the National Natural Science Funds for Distinguished Young Scholars of China
文摘A novel grain boundary(GB) model characterized with different angles and positions in the nanowire was set up.By means of device simulator,the effects of grain boundary angle and location on the electrical performance of ZnO nanowire FET(Nanowire Field-Effect Transistor) with a wrap-around gate configuration,were explored.With the increase of the grain boundary angle,the electrical performance degrades gradually.When a grain boundary with a smaller angle,such as 5° GB,is located close to the source or drain electrode,the grain boundary is partially depleted by an electric field peak,which leads to the decrease of electron concentration and the degradation of transistor characteristics.When the 90° GB is located at the center of the nanowire,the action of the electric field is balanced out,so the electrical performance of transistor is better than that of the 90° GB located at the other positions.
