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张伯行的“刻”及其当代镜鉴
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作者 张红霞 《领导科学》 北大核心 2019年第15期84-87,共4页
张伯行的“刻”,是对自己的严格要求,是处事中的坚持原则,是履职中的不遗余力。张伯行的“刻”,孕育于其诗礼传家的优良家风和理学气息浓郁的成长环境,形成于其对“千圣之学”的笃信与敬畏和自觉继承道统的责任与担当,践行于其为官一任... 张伯行的“刻”,是对自己的严格要求,是处事中的坚持原则,是履职中的不遗余力。张伯行的“刻”,孕育于其诗礼传家的优良家风和理学气息浓郁的成长环境,形成于其对“千圣之学”的笃信与敬畏和自觉继承道统的责任与担当,践行于其为官一任、造福一方的仕途生涯。张伯行的“刻”对当代领导干部的借鉴在于:心存敬畏,有恪固之心;坚持原则,有底线意识;以人为本,不忘初心。 展开更多
关键词 张伯行 “刻” 领导干部
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“刻奇”与“狂欢”——《武林外传》语言特点简析 被引量:2
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作者 贺闱 刘顺 《电影文学》 北大核心 2007年第19期60-60,共1页
刻奇与狂欢间构成《武林外传》剧独特语言魅力的重要因素。
关键词 武林外传 语言 “刻奇” “狂欢”
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785 nm semiconductor laser with shallow etched gratings
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作者 YUE Yu-xin ZOU Yong-gang +5 位作者 FAN Jie FU Xi-yao ZHANG Nai-yu SONG Ying-min HUANG Zhuo-er MA Xiao-hui 《中国光学(中英文)》 北大核心 2025年第4期931-946,共16页
A new type of 785 nm semiconductor laser device has been proposed.The thin cladding and mode expansion layer structure incorporated into the epitaxy on the p-side significantly impacts the regulation of grating etchin... A new type of 785 nm semiconductor laser device has been proposed.The thin cladding and mode expansion layer structure incorporated into the epitaxy on the p-side significantly impacts the regulation of grating etching depth.Thinning of the p-side waveguide layer makes the light field bias to the n-side cladding layer.By coordinating the confinement effect of the cladding layer,the light confinement factor on the p-side is regulated.On the other hand,the introduction of a mode expansion layer facilitates the expansion of the mode profile on the p side cladding layer.Both these factors contribute positively to reducing the grating etching depth.Compared to the reported epitaxial structures of symmetric waveguides,the new structure significantly reduces the etching depth of the grating while ensuring adequate reflection intensity and maintaining resonance.Moreover,to improve the output performance of the device,the new epitaxial structure has been optimized.Based on the traditional epitaxial structure,an energy release layer and an electron blocking layer are added to improve the electronic recombination efficiency.This improved structure has an output performance comparable to that of a symmetric waveguide,despite being able to have a smaller gain area. 展开更多
关键词 surface grating etching depth epitaxial structure recombination efficiency gain area
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离子色谱法测定蚀刻槽废氢氟酸中的六氟硅酸 被引量:4
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作者 霍世欣 罗全迁 曹琳 《色谱》 CAS CSCD 北大核心 2016年第10期982-985,共4页
建立了一种新的检测蚀刻槽废氢氟酸中六氟硅酸的离子色谱方法.色谱柱为Metrosep A Supp 7 阴离子交 换柱,流动相为3. 2 mmol/L 碳酸钠-1. 0 mmol/L 碳酸氢钠,流速为0. 7 mL/min.六氟桂酸经过抑制型电导检测 器后进行衍生化反应,在360 n... 建立了一种新的检测蚀刻槽废氢氟酸中六氟硅酸的离子色谱方法.色谱柱为Metrosep A Supp 7 阴离子交 换柱,流动相为3. 2 mmol/L 碳酸钠-1. 0 mmol/L 碳酸氢钠,流速为0. 7 mL/min.六氟桂酸经过抑制型电导检测 器后进行衍生化反应,在360 nm波长下用紫外检测器检测.六氟硅酸的线性范围为2. 4- 120 mg/L ,相关系数r 2 大于0. 999,定量限为0. 24 mg/L ,平均加标回收率为97. 2%.本方法还可以同时利用电导检测器检测废氢氟酸中 的氢氟酸、醋酸、盐酸、硝酸、磷酸和硫酸的含量.该方法快速、准确,适用于蚀刻槽液中六氟硅酸的检测. 展开更多
关键词 离子色谱 紫外检测器 电导检测器 六氟硅酸
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旱地无病毒矮化苹果栽培技术研究
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作者 安贵阳 杜志辉 +1 位作者 郁俊谊 邓丰产 《西北农林科技大学学报(自然科学版)》 CSCD 北大核心 2001年第z1期12-15,共4页
研究了无病毒矮化苹果和病毒感染苹果生长及结果的差异。通过无病毒矮化苹果在矮化中间砧全埋土、“刻剥拉”早果丰产及 15主枝细长纺锤形整形修剪等技术的研究创新 ,使无病毒矮化苹果在我国西北黄土高原地区首次大面积示范成功 ,示范推... 研究了无病毒矮化苹果和病毒感染苹果生长及结果的差异。通过无病毒矮化苹果在矮化中间砧全埋土、“刻剥拉”早果丰产及 15主枝细长纺锤形整形修剪等技术的研究创新 ,使无病毒矮化苹果在我国西北黄土高原地区首次大面积示范成功 ,示范推广 10 0 0 hm2 ,实现 6年生无病毒矮化红富士产量 45 t/ hm2。研究还总结了 12 ,15 ,2 0主枝的细长纺锤形树体结构等一系列量化指标 。 展开更多
关键词 无病毒 矮化中间砧 细长纺锤形 “刻剥拉” 旱地
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Indirect 3D printed ceramic:A literature review 被引量:4
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作者 CAI Jia-wei ZHANG Bai-cheng +2 位作者 ZHANG Mao-hang WEN Yao-jie QU Xuan-hui 《Journal of Central South University》 SCIE EI CAS CSCD 2021年第4期983-1002,共20页
Additive manufacturing(AM),also known as 3D-printing(3DP)technology,is an advanced manufacturing technology that has developed rapidly in the past 40 years.However,the ceramic material printing is still challenging be... Additive manufacturing(AM),also known as 3D-printing(3DP)technology,is an advanced manufacturing technology that has developed rapidly in the past 40 years.However,the ceramic material printing is still challenging because of the issue of cracking.Indirect 3D printing has been designed and drawn attention because of its high manufacturing speed and low cost.Indirect 3D printing separates the one-step forming process of direct 3D printing into binding and material sintering,avoiding the internal stress caused by rapid cooling,making it possible to realize the highquality ceramic component with complex shape.This paper presents the research progress of leading indirect 3D printing technologies,including binder jetting(BJ),stereolithography(SLA),and fused deposition modeling(FDM).At present,the additive manufacturing of ceramic materials is mainly achieved through indirect 3D printing technology,and these materials include silicon nitride,hydroxyapatite functional ceramics,silicon carbide structural ceramics. 展开更多
关键词 indirect 3D printing CERAMIC binder jetting STEREOLITHOGRAPHY fused deposition modeling
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Mechanism of gas-water flow at pore-level in aquifer gas storage 被引量:4
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作者 石磊 王皆明 +2 位作者 廖广志 熊伟 高树生 《Journal of Central South University》 SCIE EI CAS 2013年第12期3620-3626,共7页
By means of the pore-level simulation, the characteristics of gas-water flow and gas-water distribution during the alternative displacement of gas and water were observed directly from etched-glass micromodel. The res... By means of the pore-level simulation, the characteristics of gas-water flow and gas-water distribution during the alternative displacement of gas and water were observed directly from etched-glass micromodel. The results show that gas-water distribution styles are divided into continuous phase type and separate phase type. The water lock exists in pore and throat during the process of gas-water displacement, and it reduces the gas flow-rate and has some effects on the recovery efficiency during the operation of gas storage. According to the experimental results of aquifer gas storage in X area, the differences in available extent among reservoirs are significant, and the availability of pore space is 33% 45%. 展开更多
关键词 aquifer gas storage gas-water flow injection-withdrawal cycle etched-glass micromodel water lock
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Development of the High-performance Synchronous Permanent Magnet Planar Motor and Its Key Technologies 被引量:6
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作者 KOU Baoquan ZHANG Lu +2 位作者 XING Feng LI Liyi ZHANG He 《中国电机工程学报》 EI CSCD 北大核心 2013年第9期I0011-I0011,共1页
Lithography is one of the most important and complicated key equipment for the integr ated circuit man ufacture.The 2一D positioning device is the importan t subsystem of lithography.Compared with conventional 2一D po... Lithography is one of the most important and complicated key equipment for the integr ated circuit man ufacture.The 2一D positioning device is the importan t subsystem of lithography.Compared with conventional 2一D positioning systems with cumbersome stacked arrangement,the 2-D positioning systems with planar motors have received increasing attention recently.Currently,many types of planar motors have been proposed. 展开更多
关键词 synchronous permanent magnet planar motor(SPMPM) lithography equipment two-dimensional planar positioning device development trends
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Femtosecond-laser direct writing 3D micro/nano-lithography using VIS-light oscillator 被引量:3
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作者 Antanas BUTKUS Edvinas SKLIUTAS +1 位作者 Darius GAILEVIČIUS Mangirdas MALINAUSKAS 《Journal of Central South University》 SCIE EI CAS CSCD 2022年第10期3270-3276,共7页
Here we report a femtosecond laser direct writing(a precise 3D printing also known as two-photon polymerization lithography) of hybrid organic-inorganic SZ2080^(TM)pre-polymer without using any photo-initiator and app... Here we report a femtosecond laser direct writing(a precise 3D printing also known as two-photon polymerization lithography) of hybrid organic-inorganic SZ2080^(TM)pre-polymer without using any photo-initiator and applying ~100 fs oscillator operating at 517 nm wavelength and 76 MHz repetition rate. The proof of concept was experimentally demonstrated and benchmarking 3D woodpile nanostructures, micro-scaffolds, free-form micro-object “Benchy” and bulk micro-cubes are successfully produced. The essential novelty underlies the fact that non-amplified laser systems delivering just 40-500 p J individual pulses are sufficient for inducing localized cross-linking reactions within hundreds of nanometers in cross sections. And it is opposed to the prejudice that higher pulse energies and lower repetition rates of amplified lasers are necessary for structuring non-photosensitized polymers. The experimental work is of high importance for fundamental understanding of laser enabled nanoscale 3D additive manufacturing and widens technology’ s field of applications where the avoidance of photo-initiator is preferable or is even a necessity, such as micro-optics, nano-photonics, and biomedicine. 展开更多
关键词 laser direct writing two-photon polymerization multi-photon lithography 3D printing additive manufacturing SZ2080TM MICROSTRUCTURES NANOTECHNOLOGY
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Modeling of photolithography process in semiconductor wafer fabrication systems using extended hybrid Petri nets 被引量:2
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作者 周炳海 潘青枝 +1 位作者 王世进 吴斌 《Journal of Central South University of Technology》 EI 2007年第3期393-398,共6页
To describe a semiconductor wafer fabrication flow availably, a new modeling method of extended hybrid Petri nets (EHPNs) was proposed. To model the discrete part and continuous part of a complex photolithography pr... To describe a semiconductor wafer fabrication flow availably, a new modeling method of extended hybrid Petri nets (EHPNs) was proposed. To model the discrete part and continuous part of a complex photolithography process, hybrid Petri nets (HPNs) were introduced. To cope with the complexity of a photolithography process, object-oriented methods such as encapsulation and classifications were integrated with HPN models. EHPN definitions were presented on the basis of HPN models and object-oriented methods. Object-oriented hybrid Petri subnet models were developed for each typical physical object and an EHPN modeling procedure steps were structured. To demonstrate the feasibility and validity of the proposed modeling method, a real wafer photolithography case was used to illustrate the modeling procedure. dynamic modeling of a complex photolithography process effectively The modeling results indicate that the EHPNs can deal with the dynamic modeling of a complex photolithography process effectively. 展开更多
关键词 semiconductor wafer fabrication photolithography process hybrid Petri net object-oriented method
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Transition of super-hydrophobic states of droplet on rough surface 被引量:2
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作者 叶霞 周明 +2 位作者 蒋大林 李健 蔡兰 《Journal of Central South University》 SCIE EI CAS 2010年第3期554-559,共6页
Twelve samples with periodic array square pillars microstructure were prepared on the silicon wafer by plasma etching techniques, on which space b of the square pillars increased from 5 to 60 μm. In order to study th... Twelve samples with periodic array square pillars microstructure were prepared on the silicon wafer by plasma etching techniques, on which space b of the square pillars increased from 5 to 60 μm. In order to study the effect ofb on the wettability of the rough surface, the effects of apparent contact angle (CA) and sliding angle (a) of the droplet on the rough surface were measured with the contact angle meter. The results show that the experimental values of CA well agree with the classical wetting theory and a decreases with the increase of b. Two drop shapes exist on the samples' surface, corresponding to the Cassie state and the Wenzel state respectively. The contact state in which a drop would settle depends typically on the size of b. On the role of gravitation, the irreversible transition of a drop from Cassie state to Wenzel state should occur at a certain space of the square pillars. Since the transition has implications on the application of super-hydrophobic rough surfaces, theoretically, the prediction of wetting state transition on square pillar array micro-structured surfaces provides an intuitionistic guidance for the design of steady superhydrophobic surfaces. 展开更多
关键词 square pillar microstructure wetting mode transition apparent contact angle sliding angle
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Effects of electron beam lithography process parameters on structure of silicon optical waveguide based on SOI
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作者 ZHENG Yu GAO Piao-piao +2 位作者 TANG Xin LIU Jian-zhe DUAN Ji-an 《Journal of Central South University》 SCIE EI CAS CSCD 2022年第10期3335-3345,共11页
Electron beam lithography(EBL) is a key technology in the fabrication of nanoscale silicon optical waveguide. The influence of exposure dose, the main process parameter of EBL, on the structure profile of poly-methyl ... Electron beam lithography(EBL) is a key technology in the fabrication of nanoscale silicon optical waveguide. The influence of exposure dose, the main process parameter of EBL, on the structure profile of poly-methyl methacrylate(PMMA) after development was studied using a silicon on insulator(SOI) wafer with 220 nm top silicon as the substrate. The relationship between exposure dose and structure pattern width after development was analyzed according to the measurement results. The optimum exposure dose of 220 μC/cm^(2) was found to obtain a final structure consistent with the designed mask value through subsequent processes. At the same time, according to the image segmentation curve tracking technology, the contour extraction process of the dose test results was carried out, and the relationship among mask design value, exposure dose and two-dimensional roughness of boundary contour was analyzed, which can provide reference for the subsequent electron beam lithography of the same substrate material. 展开更多
关键词 silicon optical waveguide electron beam lithography exposure dose ROUGHNESS
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