The trichlorosilane(TCS)purification process consumes a significant amount of energy to achieve the high purity requirement for TCS quality(99.9999%).This work proposed a series of energy saving technology to enhance ...The trichlorosilane(TCS)purification process consumes a significant amount of energy to achieve the high purity requirement for TCS quality(99.9999%).This work proposed a series of energy saving technology to enhance the TCS purification process,including the conventional process,the conventional process coupled with heat-pump(HP),the multi-effect distillation process,and the dividing-wall columns process.All proposed schemes have been conceptually constructed by Aspen Plus.The design and optimization of the processes have been performed by the sensitivity analysis and the response surface methodology.Moreover,the energy consumption and total annual cost(TAC)for these schemes were discussed.The simulation results show that the TAC of the conventional process coupled with the integrated heat pump can reduce 50.5%of energy consumption as compared with the conventional process;the double-effect and three-effect processes can save 15.6%and 33.8%of energy consumption,respectively;the dividing wall column process and that coupled with the heat pump process can reduce by 22.3%and 48.1%of energy consumption,respectively.It can be found that the operating cost can be saved by using the heat pump technology,while the capital cost increases due to the investment in the compressor,when the processes coupled with the heat pump are used.These results demonstrate that the conventional process coupled with the HP technology has advantages over other distillation schemes for TCS purification in terms of the energy saving and economic effects.展开更多
使用三氯硅烷（TCS）作为含氯生长源,在多片外延设备生长了高质量的4H-SiC外延材料。研究了原位预刻蚀气体HCl流量和刻蚀时间对SiC外延材料表面三角形缺陷的影响,使用光学显微镜和表面缺陷分析仪对SiC外延材料表面缺陷进行表征测试和统...使用三氯硅烷（TCS）作为含氯生长源,在多片外延设备生长了高质量的4H-SiC外延材料。研究了原位预刻蚀气体HCl流量和刻蚀时间对SiC外延材料表面三角形缺陷的影响,使用光学显微镜和表面缺陷分析仪对SiC外延材料表面缺陷进行表征测试和统计,使用傅里叶红外测试仪（FTIR）和原子力显微镜（AFM）对外延材料表面形貌进行表征。结果表明,预刻蚀气体体积流量和时间对4英寸SiC外延材料表面三角形缺陷影响明显,随着HCl体积流量和时间的增加,材料表面的三角形缺陷密度先减小后增加,在HCl流量为100 m L/min、刻蚀时间为20 min时,三角形缺陷密度最低达到0.47cm-2。此外,通过调整C/Si比和载气体积流量等参数,使4英寸SiC外延材料掺杂浓度不均匀性和厚度不均匀性均得到有效改善,结果表明该外延片质量满足SiC电力电子器件的应用。展开更多
基金financial support from the National Natural Science Foundation of China (project No. 21406157)
文摘The trichlorosilane(TCS)purification process consumes a significant amount of energy to achieve the high purity requirement for TCS quality(99.9999%).This work proposed a series of energy saving technology to enhance the TCS purification process,including the conventional process,the conventional process coupled with heat-pump(HP),the multi-effect distillation process,and the dividing-wall columns process.All proposed schemes have been conceptually constructed by Aspen Plus.The design and optimization of the processes have been performed by the sensitivity analysis and the response surface methodology.Moreover,the energy consumption and total annual cost(TAC)for these schemes were discussed.The simulation results show that the TAC of the conventional process coupled with the integrated heat pump can reduce 50.5%of energy consumption as compared with the conventional process;the double-effect and three-effect processes can save 15.6%and 33.8%of energy consumption,respectively;the dividing wall column process and that coupled with the heat pump process can reduce by 22.3%and 48.1%of energy consumption,respectively.It can be found that the operating cost can be saved by using the heat pump technology,while the capital cost increases due to the investment in the compressor,when the processes coupled with the heat pump are used.These results demonstrate that the conventional process coupled with the HP technology has advantages over other distillation schemes for TCS purification in terms of the energy saving and economic effects.
文摘使用三氯硅烷（TCS）作为含氯生长源,在多片外延设备生长了高质量的4H-SiC外延材料。研究了原位预刻蚀气体HCl流量和刻蚀时间对SiC外延材料表面三角形缺陷的影响,使用光学显微镜和表面缺陷分析仪对SiC外延材料表面缺陷进行表征测试和统计,使用傅里叶红外测试仪（FTIR）和原子力显微镜（AFM）对外延材料表面形貌进行表征。结果表明,预刻蚀气体体积流量和时间对4英寸SiC外延材料表面三角形缺陷影响明显,随着HCl体积流量和时间的增加,材料表面的三角形缺陷密度先减小后增加,在HCl流量为100 m L/min、刻蚀时间为20 min时,三角形缺陷密度最低达到0.47cm-2。此外,通过调整C/Si比和载气体积流量等参数,使4英寸SiC外延材料掺杂浓度不均匀性和厚度不均匀性均得到有效改善,结果表明该外延片质量满足SiC电力电子器件的应用。
