Memristor chaotic research has become a hotspot in the academic world.However,there is little exploration combining memristor and stochastic resonance,and the correlation research between chaos and stochastic resonanc...Memristor chaotic research has become a hotspot in the academic world.However,there is little exploration combining memristor and stochastic resonance,and the correlation research between chaos and stochastic resonance is still in the preliminary stage.In this paper,we focus on the stochastic resonance induced by memristor chaos,which enhances the dynamics of chaotic systems through the introduction of memristor and induces memristor stochastic resonance under certain conditions.First,the memristor chaos model is constructed,and the memristor stochastic resonance model is constructed by adjusting the parameters of the memristor chaos model.Second,the combination of dynamic analysis and experimental verification is used to analyze the memristor stochastic resonance and to investigate the trend of the output signal of the system under different amplitudes of the input signal.Finally,the practicality and reliability of the constructed model are further verified through the design and testing of the analog circuit,which provides strong support for the practical application of the memristor chaos-induced stochastic resonance model.展开更多
Sb_(2)Se_(3)solar cells have achieved a power conversion efficiency(PCE)of over 10%.However,the serious open-circuit voltage deficit(VOC-deificit),induced by the hard-to-control crystal orientation and heterojunction ...Sb_(2)Se_(3)solar cells have achieved a power conversion efficiency(PCE)of over 10%.However,the serious open-circuit voltage deficit(VOC-deificit),induced by the hard-to-control crystal orientation and heterojunction interface reaction,limits the PCE of vapor transport deposition(VTD)processed Sb_(2)Se_(3)solar cells.To overcome the VOC-deficit problem of VTD processed Sb_(2)Se_(3)solar cells,herein,an in-situ bandgap regulation strategy is innovatively proposed to prepare a wide band gap Sb2(S,Se)3seed layer(WBSL)at CdS/Sb_(2)Se_(3)heterojunction interface to improve the PCE of Sb_(2)Se_(3)solar cells.The analysis results show that the introduced Sb2(S,Se)3seed layer can enhance the[001]orientation of Sb_(2)Se_(3)thin films,broaden the band gap of heterojunction interface,and realize a"Spike-like"conduction band alignment with ΔE_(c)=0.11 eV.In addition,thanks to the suppressed CdS/Sb_(2)Se_(3)interface reaction after WBSL application,the depletion region width of Sb_(2)Se_(3)solar cells is widened,and the quality of CdS/Sb_(2)Se_(3)interface and the carrier transporting performance of Sb_(2)Se_(3)solar cells are significantly improved as well.Moreover,the harmful Se vacancy defects near the front interface of Sb_(2)Se_(3)solar cells can be greatly diminished by WBSL.Finally,the PCE of Sb_(2)Se_(3)solar cells is improved from 7.0%to 7.6%;meanwhile the VOCis increased to 466 mV which is the highest value for the VTD derived Sb_(2)Se_(3)solar cells.This work will provide a valuable reference for the interface and orientation regulation of antimony-based chalcogenide solar cells.展开更多
Topological insulators occupy a prominent position in the realm of condensed matter physics. Nevertheless, the presence of strong disorder has the potential to disrupt the integrity of topological states, leading to t...Topological insulators occupy a prominent position in the realm of condensed matter physics. Nevertheless, the presence of strong disorder has the potential to disrupt the integrity of topological states, leading to the localization of all states.This study delves into the intricate interplay between topology and localization within the one-dimensional Su–Schrieffer–Heeger(SSH) model, which incorporates controllable off-diagonal quasi-periodic modulations on superconducting circuits.Through the application of external alternating current(ac) magnetic fluxes, each transmon undergoes controlled driving,enabling independent tuning of all coupling strengths. Within a framework of this model, we construct comprehensive phase diagrams delineating regions characterized by extended topologically nontrivial states, critical localization, and coexisting topological and critical localization phases. The paper also addresses the dynamics of qubit excitations, elucidating distinct quantum state transfers resulting from the intricate interplay between topology and localization. Additionally, we propose a method for detecting diverse quantum phases utilizing existing experimental setups.展开更多
The performance of Nb superconducting quantum devices is predominantly limited by dielectric loss at the metal–air interface,where Nb2O5 is considered the main loss source.Here,we suppress the formation of native oxi...The performance of Nb superconducting quantum devices is predominantly limited by dielectric loss at the metal–air interface,where Nb2O5 is considered the main loss source.Here,we suppress the formation of native oxides by in-situ deposition of a TiN capping layer on the Nb film.With TiN capping layers,no Nb2O5 forms on the surface of the Nb film.The quality factor Qi of the Nb resonator increases from 5.6×10^(5) to 7.9×10^(5) at low input power and from 6.8×10^(6) to 1.1×10^(7)at high input power.Furthermore,the TiN capping layer also shows good aging resistance in Nb resonator devices,with no significant performance fluctuations after one month of aging.These findings highlight the effectiveness of TiN capping layers in enhancing the performance and longevity of Nb superconducting quantum devices.展开更多
The extensive research and development in perovskite solar cells (PSCs) have rekindled the hopes of converting solar energy into electricity.An elusive understanding of underlying mechanisms is required for the develo...The extensive research and development in perovskite solar cells (PSCs) have rekindled the hopes of converting solar energy into electricity.An elusive understanding of underlying mechanisms is required for the development of efficient PSCs.Over the years,Impedance Spectroscopy (IS) characterization,along with complementary techniques,has proven to be an effective way to understand and analyze the charge transport and recombination at interface and bulk of PSCs.The IS of PSCs have been analyzed,interpreted,and improvised continuously,revealing intricate details about the work.However,there is a lack of centralized source of these details,which make it tougher to account for the generalized approach to understand the device properties.The present work is focused on compiling the research done on various PSC device architectures via IS to construct a comprehensive foundation of information on impedance plots,equivalent circuits,and associated processes.展开更多
Reducing the control error is vital for high-fidelity digital and analog quantum operations.In superconducting circuits,one disagreeable error arises from the reflection of microwave signals due to impedance mismatch ...Reducing the control error is vital for high-fidelity digital and analog quantum operations.In superconducting circuits,one disagreeable error arises from the reflection of microwave signals due to impedance mismatch in the control chain.Here,we demonstrate a reflection cancelation method when considering that there are two reflection nodes on the control line.We propose to generate the pre-distortion pulse by passing the envelopes of the microwave signal through digital filters,which enables real-time reflection correction when integrated into the field-programmable gate array(FPGA).We achieve a reduction of single-qubit gate infidelity from 0.67%to 0.11%after eliminating microwave reflection.Real-time correction of microwave reflection paves the way for precise control and manipulation of the qubit state and would ultimately enhance the performance of algorithms and simulations executed on quantum processors.展开更多
Using quantum algorithms to solve various problems has attracted widespread attention with the development of quantum computing.Researchers are particularly interested in using the acceleration properties of quantum a...Using quantum algorithms to solve various problems has attracted widespread attention with the development of quantum computing.Researchers are particularly interested in using the acceleration properties of quantum algorithms to solve NP-complete problems.This paper focuses on the well-known NP-complete problem of finding the minimum dominating set in undirected graphs.To expedite the search process,a quantum algorithm employing Grover’s search is proposed.However,a challenge arises from the unknown number of solutions for the minimum dominating set,rendering direct usage of original Grover’s search impossible.Thus,a swap test method is introduced to ascertain the number of iterations required.The oracle,diffusion operators,and swap test are designed with achievable quantum gates.The query complexity is O(1.414^(n))and the space complexity is O(n).To validate the proposed approach,qiskit software package is employed to simulate the quantum circuit,yielding the anticipated results.展开更多
High-voltage circuit breakers are the core equipment in power networks,and to a certain extent,are related to the safe and reliable operation of power systems.However,their core components are prone to mechanical faul...High-voltage circuit breakers are the core equipment in power networks,and to a certain extent,are related to the safe and reliable operation of power systems.However,their core components are prone to mechanical faults.This study proposes a component separation method to detect multiple mechanical faults in circuit breakers that can achieve online real-time monitoring.First,a model and strategy are presented for obtaining mechanical voiceprint signals from circuit breakers.Subsequently,the component separation method was used to decompose the voiceprint signals of multiple faults into individual component signals.Based on this,the recognition of the features of a single-fault voiceprint signal can be achieved.Finally,multiple faults in high-voltage circuit breakers were identified through an experimental simulation and verification of the circuit breaker voiceprint signals collected from the substation site.The research results indicate that the proposed method exhibits excellent performance for multiple mechanical faults,such as spring structures and loose internal components of circuit breakers.In addition,it provides a reference method for the real-time online monitoring of high-voltage circuit breakers.展开更多
This paper presents a novel approach to proxy blind signatures in the realm of quantum circuits,aiming to enhance security while safeguarding sensitive information.The main objective of this research is to introduce a...This paper presents a novel approach to proxy blind signatures in the realm of quantum circuits,aiming to enhance security while safeguarding sensitive information.The main objective of this research is to introduce a quantum proxy blind signature(QPBS)protocol that utilizes quantum logical gates and quantum measurement techniques.The QPBS protocol is constructed by the initial phase,proximal blinding message phase,remote authorization and signature phase,remote validation,and de-blinding phase.This innovative design ensures a secure mechanism for signing documents without revealing the content to the proxy signer,providing practical security authentication in a quantum environment under the assumption that the CNOT gates are securely implemented.Unlike existing approaches,our proposed QPBS protocol eliminates the need for quantum entanglement preparation,thus simplifying the implementation process.To assess the effectiveness and robustness of the QPBS protocol,we conduct comprehensive simulation studies in both ideal and noisy quantum environments on the IBM quantum cloud platform.The results demonstrate the superior performance of the QPBS algorithm,highlighting its resilience against repudiation and forgeability,which are key security concerns in the realm of proxy blind signatures.Furthermore,we have established authentic security thresholds(82.102%)in the presence of real noise,thereby emphasizing the practicality of our proposed solution.展开更多
Accurate real-time simulations of nuclear reactor circuit systems are particularly important for system safety analysis and design.To effectively improve computational efficiency without reducing accuracy,this study e...Accurate real-time simulations of nuclear reactor circuit systems are particularly important for system safety analysis and design.To effectively improve computational efficiency without reducing accuracy,this study establishes a thermal-hydraulics reduced-order model(ROM)for nuclear reactor circuit systems.The full-order circuit system calculation model is first established and verified and then used to calculate the thermal-hydraulic properties of the circuit system under different states as snapshots.The proper orthogonal decomposition method is used to extract the basis functions from snapshots,and the ROM is constructed using the least-squares method,effectively reducing the difficulty in constructing the ROM.A comparison between the full-order simulation and ROM prediction results of the AP1000 circuit system shows that the proposed ROM can improve computational efficiency by 1500 times while achieving a maximum relative error of 0.223%.This research develops a new direction and perspective for the digital twin modeling of nuclear reactor system circuits.展开更多
Simulating the total ionizing dose(TID)of an electrical system using transistor-level models can be difficult and expensive,particularly for digital-integrated circuits(ICs).In this study,a method for modeling TID eff...Simulating the total ionizing dose(TID)of an electrical system using transistor-level models can be difficult and expensive,particularly for digital-integrated circuits(ICs).In this study,a method for modeling TID effects in complementary metaloxide semiconductor(CMOS)digital ICs based on the input/output buffer information specification(IBIS)was proposed.The digital IC was first divided into three parts based on its internal structure:the input buffer,output buffer,and functional area.Each of these three parts was separately modeled.Using the IBIS model,the transistor V-I characteristic curves of the buffers were processed,and the physical parameters were extracted and modeled using VHDL-AMS.In the functional area,logic functions were modeled in VHDL according to the data sheet.A golden digital IC model was developed by combining the input buffer,output buffer,and functional area models.Furthermore,the golden ratio was reconstructed based on TID experimental data,enabling the assessment of TID effects on the threshold voltage,carrier mobility,and time series of the digital IC.TID experiments were conducted using a CMOS non-inverting multiplexer,NC7SZ157,and the results were compared with the simulation results,which showed that the relative errors were less than 2%at each dose point.This confirms the practicality and accuracy of the proposed modeling method.The TID effect model for digital ICs developed using this modeling technique includes both the logical function of the IC and changes in electrical properties and functional degradation impacted by TID,which has potential applications in the design of radiation-hardening tolerance in digital ICs.展开更多
The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with ...The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection circuit.This paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP signals.Based on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the device.At the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse width.The results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the circuit.In addition,pulse signals with different attributes will change the damage threshold of the circuit.These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.展开更多
When the contacts of a medium-voltage DC air circuit breaker(DCCB) are separated, the energy distribution of the arc is determined by the formation process of the near-electrode sheath. Therefore, the voltage drop thr...When the contacts of a medium-voltage DC air circuit breaker(DCCB) are separated, the energy distribution of the arc is determined by the formation process of the near-electrode sheath. Therefore, the voltage drop through the near-electrode sheath is an important means to build up the arc voltage, which directly determines the current-limiting performance of the DCCB. A numerical model to describe the near-electrode sheath formation process can provide insight into the physical mechanism of the arc formation, and thus provide a method for arc energy regulation. In this work, we establish a two-dimensional axisymmetric time-varying model of a medium-voltage DCCB arc when interrupted by high current based on a fluid-chemical model involving 16 kinds of species and 46 collision reactions. The transient distributions of electron number density, positive and negative ion number density, net space charge density, axial electric field, axial potential between electrodes, and near-cathode sheath are obtained from the numerical model. The computational results show that the electron density in the arc column increases, then decreases, and then stabilizes during the near-cathode sheath formation process, and the arc column's diameter gradually becomes wider. The 11.14 V–12.33 V drops along the17 μm space charge layer away from the cathode(65.5 k V/m–72.5 k V/m) when the current varies from 20 k A–80 k A.The homogeneous external magnetic field has little effect on the distribution of particles in the near-cathode sheath core,but the electron number density at the near-cathode sheath periphery can increase as the magnetic field increases and the homogeneous external magnetic field will lead to arc diffusion. The validity of the numerical model can be proven by comparison with the experiment.展开更多
文摘Memristor chaotic research has become a hotspot in the academic world.However,there is little exploration combining memristor and stochastic resonance,and the correlation research between chaos and stochastic resonance is still in the preliminary stage.In this paper,we focus on the stochastic resonance induced by memristor chaos,which enhances the dynamics of chaotic systems through the introduction of memristor and induces memristor stochastic resonance under certain conditions.First,the memristor chaos model is constructed,and the memristor stochastic resonance model is constructed by adjusting the parameters of the memristor chaos model.Second,the combination of dynamic analysis and experimental verification is used to analyze the memristor stochastic resonance and to investigate the trend of the output signal of the system under different amplitudes of the input signal.Finally,the practicality and reliability of the constructed model are further verified through the design and testing of the analog circuit,which provides strong support for the practical application of the memristor chaos-induced stochastic resonance model.
基金supported by the National Natural Science Foundation of China(62305064)the Research Start-up Fund for Young Teachers of Fuzhou University(602592)+1 种基金the Young and Middleaged Teacher Education Research Project of Fujian Province(JAT220011)the Fujian Science&Technology Innovation Laboratory Optoelectronic Information of China(Grant No.2021ZZ124).
文摘Sb_(2)Se_(3)solar cells have achieved a power conversion efficiency(PCE)of over 10%.However,the serious open-circuit voltage deficit(VOC-deificit),induced by the hard-to-control crystal orientation and heterojunction interface reaction,limits the PCE of vapor transport deposition(VTD)processed Sb_(2)Se_(3)solar cells.To overcome the VOC-deficit problem of VTD processed Sb_(2)Se_(3)solar cells,herein,an in-situ bandgap regulation strategy is innovatively proposed to prepare a wide band gap Sb2(S,Se)3seed layer(WBSL)at CdS/Sb_(2)Se_(3)heterojunction interface to improve the PCE of Sb_(2)Se_(3)solar cells.The analysis results show that the introduced Sb2(S,Se)3seed layer can enhance the[001]orientation of Sb_(2)Se_(3)thin films,broaden the band gap of heterojunction interface,and realize a"Spike-like"conduction band alignment with ΔE_(c)=0.11 eV.In addition,thanks to the suppressed CdS/Sb_(2)Se_(3)interface reaction after WBSL application,the depletion region width of Sb_(2)Se_(3)solar cells is widened,and the quality of CdS/Sb_(2)Se_(3)interface and the carrier transporting performance of Sb_(2)Se_(3)solar cells are significantly improved as well.Moreover,the harmful Se vacancy defects near the front interface of Sb_(2)Se_(3)solar cells can be greatly diminished by WBSL.Finally,the PCE of Sb_(2)Se_(3)solar cells is improved from 7.0%to 7.6%;meanwhile the VOCis increased to 466 mV which is the highest value for the VTD derived Sb_(2)Se_(3)solar cells.This work will provide a valuable reference for the interface and orientation regulation of antimony-based chalcogenide solar cells.
基金Project supported by the Natural Science Foundation of Shanxi Province,China (Grant No. 202103021223010)。
文摘Topological insulators occupy a prominent position in the realm of condensed matter physics. Nevertheless, the presence of strong disorder has the potential to disrupt the integrity of topological states, leading to the localization of all states.This study delves into the intricate interplay between topology and localization within the one-dimensional Su–Schrieffer–Heeger(SSH) model, which incorporates controllable off-diagonal quasi-periodic modulations on superconducting circuits.Through the application of external alternating current(ac) magnetic fluxes, each transmon undergoes controlled driving,enabling independent tuning of all coupling strengths. Within a framework of this model, we construct comprehensive phase diagrams delineating regions characterized by extended topologically nontrivial states, critical localization, and coexisting topological and critical localization phases. The paper also addresses the dynamics of qubit excitations, elucidating distinct quantum state transfers resulting from the intricate interplay between topology and localization. Additionally, we propose a method for detecting diverse quantum phases utilizing existing experimental setups.
基金the National Natural Science Foun-dation of China(Grant Nos.12034018 and 11625419).
文摘The performance of Nb superconducting quantum devices is predominantly limited by dielectric loss at the metal–air interface,where Nb2O5 is considered the main loss source.Here,we suppress the formation of native oxides by in-situ deposition of a TiN capping layer on the Nb film.With TiN capping layers,no Nb2O5 forms on the surface of the Nb film.The quality factor Qi of the Nb resonator increases from 5.6×10^(5) to 7.9×10^(5) at low input power and from 6.8×10^(6) to 1.1×10^(7)at high input power.Furthermore,the TiN capping layer also shows good aging resistance in Nb resonator devices,with no significant performance fluctuations after one month of aging.These findings highlight the effectiveness of TiN capping layers in enhancing the performance and longevity of Nb superconducting quantum devices.
基金the ORSP of Pandit Deendayal Energy University and DST SERB(IPA/2021/96)for the financial support.
文摘The extensive research and development in perovskite solar cells (PSCs) have rekindled the hopes of converting solar energy into electricity.An elusive understanding of underlying mechanisms is required for the development of efficient PSCs.Over the years,Impedance Spectroscopy (IS) characterization,along with complementary techniques,has proven to be an effective way to understand and analyze the charge transport and recombination at interface and bulk of PSCs.The IS of PSCs have been analyzed,interpreted,and improvised continuously,revealing intricate details about the work.However,there is a lack of centralized source of these details,which make it tougher to account for the generalized approach to understand the device properties.The present work is focused on compiling the research done on various PSC device architectures via IS to construct a comprehensive foundation of information on impedance plots,equivalent circuits,and associated processes.
基金the National Natural Science Foun-dation of China(Grant Nos.12034018 and 11625419).
文摘Reducing the control error is vital for high-fidelity digital and analog quantum operations.In superconducting circuits,one disagreeable error arises from the reflection of microwave signals due to impedance mismatch in the control chain.Here,we demonstrate a reflection cancelation method when considering that there are two reflection nodes on the control line.We propose to generate the pre-distortion pulse by passing the envelopes of the microwave signal through digital filters,which enables real-time reflection correction when integrated into the field-programmable gate array(FPGA).We achieve a reduction of single-qubit gate infidelity from 0.67%to 0.11%after eliminating microwave reflection.Real-time correction of microwave reflection paves the way for precise control and manipulation of the qubit state and would ultimately enhance the performance of algorithms and simulations executed on quantum processors.
基金Project supported by the National Natural Science Foundation of China(Grant No.62101600)the Science Foundation of China University of Petroleum,Beijing(Grant No.2462021YJRC008)the State Key Laboratory of Cryptology(Grant No.MMKFKT202109).
文摘Using quantum algorithms to solve various problems has attracted widespread attention with the development of quantum computing.Researchers are particularly interested in using the acceleration properties of quantum algorithms to solve NP-complete problems.This paper focuses on the well-known NP-complete problem of finding the minimum dominating set in undirected graphs.To expedite the search process,a quantum algorithm employing Grover’s search is proposed.However,a challenge arises from the unknown number of solutions for the minimum dominating set,rendering direct usage of original Grover’s search impossible.Thus,a swap test method is introduced to ascertain the number of iterations required.The oracle,diffusion operators,and swap test are designed with achievable quantum gates.The query complexity is O(1.414^(n))and the space complexity is O(n).To validate the proposed approach,qiskit software package is employed to simulate the quantum circuit,yielding the anticipated results.
基金supported by the State Key Laboratory of Technology and Equipment for Defense against Power System Operational Risks(No.SGNR0000KJJS2302137)the National Natural Science Foundation of China(Grant No.62203248)the Natural Science Foundation of Shandong Province(Grant No.ZR2020ME194).
文摘High-voltage circuit breakers are the core equipment in power networks,and to a certain extent,are related to the safe and reliable operation of power systems.However,their core components are prone to mechanical faults.This study proposes a component separation method to detect multiple mechanical faults in circuit breakers that can achieve online real-time monitoring.First,a model and strategy are presented for obtaining mechanical voiceprint signals from circuit breakers.Subsequently,the component separation method was used to decompose the voiceprint signals of multiple faults into individual component signals.Based on this,the recognition of the features of a single-fault voiceprint signal can be achieved.Finally,multiple faults in high-voltage circuit breakers were identified through an experimental simulation and verification of the circuit breaker voiceprint signals collected from the substation site.The research results indicate that the proposed method exhibits excellent performance for multiple mechanical faults,such as spring structures and loose internal components of circuit breakers.In addition,it provides a reference method for the real-time online monitoring of high-voltage circuit breakers.
基金Project supported by the General Project of Natural Science Foundation of Hunan Province(Grant Nos.2024JJ5273 and 2023JJ50328)the Scientific Research Project of Education Department of Hunan Province(Grant Nos.22A0049 and 22B0699)。
文摘This paper presents a novel approach to proxy blind signatures in the realm of quantum circuits,aiming to enhance security while safeguarding sensitive information.The main objective of this research is to introduce a quantum proxy blind signature(QPBS)protocol that utilizes quantum logical gates and quantum measurement techniques.The QPBS protocol is constructed by the initial phase,proximal blinding message phase,remote authorization and signature phase,remote validation,and de-blinding phase.This innovative design ensures a secure mechanism for signing documents without revealing the content to the proxy signer,providing practical security authentication in a quantum environment under the assumption that the CNOT gates are securely implemented.Unlike existing approaches,our proposed QPBS protocol eliminates the need for quantum entanglement preparation,thus simplifying the implementation process.To assess the effectiveness and robustness of the QPBS protocol,we conduct comprehensive simulation studies in both ideal and noisy quantum environments on the IBM quantum cloud platform.The results demonstrate the superior performance of the QPBS algorithm,highlighting its resilience against repudiation and forgeability,which are key security concerns in the realm of proxy blind signatures.Furthermore,we have established authentic security thresholds(82.102%)in the presence of real noise,thereby emphasizing the practicality of our proposed solution.
基金supported by the National Natural Science Foundation of China(No.12205389)Guangdong Basic and Applied Basic Research Foundation(No.2022A1515011735)Science and Technology on Reactor System Design Technology Laboratory(No.KFKT-05-FWHT-WU-2023014).
文摘Accurate real-time simulations of nuclear reactor circuit systems are particularly important for system safety analysis and design.To effectively improve computational efficiency without reducing accuracy,this study establishes a thermal-hydraulics reduced-order model(ROM)for nuclear reactor circuit systems.The full-order circuit system calculation model is first established and verified and then used to calculate the thermal-hydraulic properties of the circuit system under different states as snapshots.The proper orthogonal decomposition method is used to extract the basis functions from snapshots,and the ROM is constructed using the least-squares method,effectively reducing the difficulty in constructing the ROM.A comparison between the full-order simulation and ROM prediction results of the AP1000 circuit system shows that the proposed ROM can improve computational efficiency by 1500 times while achieving a maximum relative error of 0.223%.This research develops a new direction and perspective for the digital twin modeling of nuclear reactor system circuits.
基金This work was supported by the special fund of the State Key Laboratory of Intense Pulsed Radiation Simulation and Effect(No.SKLIPR2011).
文摘Simulating the total ionizing dose(TID)of an electrical system using transistor-level models can be difficult and expensive,particularly for digital-integrated circuits(ICs).In this study,a method for modeling TID effects in complementary metaloxide semiconductor(CMOS)digital ICs based on the input/output buffer information specification(IBIS)was proposed.The digital IC was first divided into three parts based on its internal structure:the input buffer,output buffer,and functional area.Each of these three parts was separately modeled.Using the IBIS model,the transistor V-I characteristic curves of the buffers were processed,and the physical parameters were extracted and modeled using VHDL-AMS.In the functional area,logic functions were modeled in VHDL according to the data sheet.A golden digital IC model was developed by combining the input buffer,output buffer,and functional area models.Furthermore,the golden ratio was reconstructed based on TID experimental data,enabling the assessment of TID effects on the threshold voltage,carrier mobility,and time series of the digital IC.TID experiments were conducted using a CMOS non-inverting multiplexer,NC7SZ157,and the results were compared with the simulation results,which showed that the relative errors were less than 2%at each dose point.This confirms the practicality and accuracy of the proposed modeling method.The TID effect model for digital ICs developed using this modeling technique includes both the logical function of the IC and changes in electrical properties and functional degradation impacted by TID,which has potential applications in the design of radiation-hardening tolerance in digital ICs.
基金National Natural Science Foundation of China(61974116)。
文摘The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection circuit.This paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP signals.Based on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the device.At the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse width.The results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the circuit.In addition,pulse signals with different attributes will change the damage threshold of the circuit.These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.
基金Project supported by the National Natural Science Foundation of China (Grant No.51977132)Key Special Science and Technology Project of Liaoning Province (Grant No.2020JH1/10100012)General Program of the Education Department of Liaoning Province (Grant No.LJKZ0126)。
文摘When the contacts of a medium-voltage DC air circuit breaker(DCCB) are separated, the energy distribution of the arc is determined by the formation process of the near-electrode sheath. Therefore, the voltage drop through the near-electrode sheath is an important means to build up the arc voltage, which directly determines the current-limiting performance of the DCCB. A numerical model to describe the near-electrode sheath formation process can provide insight into the physical mechanism of the arc formation, and thus provide a method for arc energy regulation. In this work, we establish a two-dimensional axisymmetric time-varying model of a medium-voltage DCCB arc when interrupted by high current based on a fluid-chemical model involving 16 kinds of species and 46 collision reactions. The transient distributions of electron number density, positive and negative ion number density, net space charge density, axial electric field, axial potential between electrodes, and near-cathode sheath are obtained from the numerical model. The computational results show that the electron density in the arc column increases, then decreases, and then stabilizes during the near-cathode sheath formation process, and the arc column's diameter gradually becomes wider. The 11.14 V–12.33 V drops along the17 μm space charge layer away from the cathode(65.5 k V/m–72.5 k V/m) when the current varies from 20 k A–80 k A.The homogeneous external magnetic field has little effect on the distribution of particles in the near-cathode sheath core,but the electron number density at the near-cathode sheath periphery can increase as the magnetic field increases and the homogeneous external magnetic field will lead to arc diffusion. The validity of the numerical model can be proven by comparison with the experiment.
