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Characteristics of proppant transport and placement within rough hydraulic fractures 被引量:1
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作者 HUANG Hai ZHENG Yong +5 位作者 WANG Yi WANG Haizhu NI Jun WANG Bin YANG Bing ZHANG Wentong 《Petroleum Exploration and Development》 SCIE 2024年第2期453-463,共11页
A three-dimensional reconstruction of rough fracture surfaces of hydraulically fractured rock outcrops is carried out by casting process,a large-scale experimental setup for visualizing rough fractures is built to per... A three-dimensional reconstruction of rough fracture surfaces of hydraulically fractured rock outcrops is carried out by casting process,a large-scale experimental setup for visualizing rough fractures is built to perform proppant transport experiments.The typical characteristics of proppant transport and placement in rough fractures and its intrinsic mechanisms are investigated,and the influences of fracture inclination,fracture width and fracturing fluid viscosity on proppant transport and placement in rough fractures are analyzed.The results show that the rough fractures cause variations in the shape of the flow channel and the fluid flow pattern,resulting in the bridging buildup during proppant transport to form unfilled zone,the emergence of multiple complex flow patterns such as channeling,reverse flow and bypassing of sand-carrying fluid,and the influence on the stability of the sand dune.The proppant has a higher placement rate in inclined rough fractures,with a maximum increase of 22.16 percentage points in the experiments compared to vertical fractures,but exhibits poor stability of the sand dune.Reduced fracture width aggravates the bridging of proppant and induces higher pumping pressure.Increasing the viscosity of the fracturing fluid can weaken the proppant bridging phenomenon caused by the rough fractures. 展开更多
关键词 reservoir fracturing rough fracture PROPPANT transport and placement characteristics bridging buildup
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The Hole Transport Characteristics of 1,4,5,8,9 and 11-Hexaazatriphenylene-Hexacarbonitrile by Blending 被引量:1
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作者 王艳平 黄金英 +4 位作者 陈江山 乔现锋 杨德志 马东阁 董丽松 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第2期106-110,共5页
The hole transport characteristics of molecule blends of 1, 4, 5, 8, 9 and 11-hexaazatriphenylene-hexacarbonitrile (HAT-CN): N,N'-di(naphthalene-l-yl)-N,N'-diphenyl-benzidine (NPB) and HAT-CN: 4,4'-cyclohex... The hole transport characteristics of molecule blends of 1, 4, 5, 8, 9 and 11-hexaazatriphenylene-hexacarbonitrile (HAT-CN): N,N'-di(naphthalene-l-yl)-N,N'-diphenyl-benzidine (NPB) and HAT-CN: 4,4'-cyclohexylidenebis[N,N- bis(4-methylphenyl)benzenamine] (TAPC) with various NPB and TAPC mixing concentrations (5 90wt%) are studied. When the concentration is in the range of 5-80wt%, it is found that the hole conductions in the two blends are space-charge-limited current (SCLC) with free trap distributions. The current-voltage characteristics of the two blends show SCLC with exponentiM trap distributions at the concentration of 90wt%. The hole mo- bilities of the two blends are very close (10^-4-10^-3 cm2 V^-1 s-X ), the dependence of electric field and temperature can be described by the modified Poole-Frenkel model. The hole mobility and activation energy of the two blends depending on concentration are similar. 展开更多
关键词 NPB IS CN of The Hole Transport characteristics of 1 4 5 8 9 and 11-Hexaazatriphenylene-Hexacarbonitrile by Blending in by
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Nonvolatile ferroelectric control of electronic properties of Bi_(2)Te_(3)
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作者 Xusheng Ding Yunfei Li +2 位作者 Chaoyang Kang Ye-Heng Song Weifeng Zhang 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第11期378-383,共6页
Nonvolatile electric-field control of the unique physical characteristics of topological insulators (TIs) is essential forthe fundamental research and development of practical electronic devices. Electrically tunable ... Nonvolatile electric-field control of the unique physical characteristics of topological insulators (TIs) is essential forthe fundamental research and development of practical electronic devices. Electrically tunable transport properties throughgating materials have been extensively investigated. However, the relatively weak and volatile tunability limits its practicalapplications in spintronics. Here, we demonstrate the nonvolatile electric-field control of Bi_(2)Te_(3) transport properties viaconstructing ferroelectric Rashba architectures, i.e., 2D Bi_(2)Te_(3)/a-In_(2)Se_(3) ferroelectric field-effect transistors. By switchingthe polarization states of a-In2Se3, the Fermi level, resistance, Fermi wave vector, carrier mobility, carrier density andmagnetoresistance (MR) of the Bi_(2)Te_(3) film can be effectively modulated. Importantly, a shift of the Fermi level towards aband gap with a surface state occurs as switching to a negative polarization state, the contribution of the surface state to theconductivity then increases, thereby increasing the carrier mobility and electron coherence length significantly, resulting inthe enhanced weak anti-localization (WAL) effect. These results provide a nonvolatile electric-field control method to tunethe electronic properties of TI and can further extend to quantum transport properties. 展开更多
关键词 topological insulator weak anti-localization effect a-In_(2)Se_(3) electrical transport characteristics
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Low lattice thermal conductivity and high figure of merit in p-type doped K3IO
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作者 Weiqiang Wang Zhenhong Dai +2 位作者 Qi Zhong Yinchang Zhao Sheng Meng 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第12期408-413,共6页
Based on first-principles calculations, Boltzmann transport equation and semiclassical analysis, we conduct a detailed study on the lattice thermal conductivity κL, Seebeck coefficient S, electrical conductivity σ, ... Based on first-principles calculations, Boltzmann transport equation and semiclassical analysis, we conduct a detailed study on the lattice thermal conductivity κL, Seebeck coefficient S, electrical conductivity σ, power factor S2σ and dimensionless figure of merit, zT, for K3IO. It is found that K3IO exhibits relatively low lattice thermal conductivity of 0.93 W·m-1·K-1 at 300 K, which is lower than the value 1.26 W·m-1·K-1 of the classical TE material PbTe. This is due to the smaller phonon group velocity νg and smaller relaxation time τλ. The low lattice thermal conductivity can lead to excellent thermoelectric properties. Thus maximum zT of 2.87 is obtained at 700 K, and the zT = 0.41 at 300 K indicate that K3IO is a potential excellent room temperature TE material. Our research on K3IO shows that it has excellent thermoelectric properties, and it is a promising candidate for applications in fields in terms of thermoelectricity. 展开更多
关键词 first-principles calculation lattice thermal transport thermal transport characteristics thermoelectric properties
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