In order to solve the problems of local maximum modulus extraction and threshold selection in the edge detection of finite resolution digital images, a new wavelet transform based adaptive dual threshold edge detec...In order to solve the problems of local maximum modulus extraction and threshold selection in the edge detection of finite resolution digital images, a new wavelet transform based adaptive dual threshold edge detection algorithm is proposed. The local maximum modulus is extracted by linear interpolation in wavelet domain. With the analysis on histogram, the image is filtered with an adaptive dual threshold method, which effectively detects the contours of small structures as well as the boundaries of large objects. A wavelet domain's propagation function is used to further select weak edges. Experimental results have shown the self adaptivity of the threshold to images having the same kind of histogram, and the efficiency even in noise tampered images.展开更多
In this paper the influences of the metal-gate and high-k/SiO 2 /Si stacked structure on the metal-oxide-semiconductor field-effect transistor（MOSFET） are investigated.The flat-band voltage is revised by considering...In this paper the influences of the metal-gate and high-k/SiO 2 /Si stacked structure on the metal-oxide-semiconductor field-effect transistor（MOSFET） are investigated.The flat-band voltage is revised by considering the influences of stacked structure and metal-semiconductor work function fluctuation.The two-dimensional Poisson＇s equation of potential distribution is presented.A threshold voltage analytical model for metal-gate/high-k/SiO 2 /Si stacked MOSFETs is developed by solving these Poisson＇s equations using the boundary conditions.The model is verified by a two-dimensional device simulator,which provides the basic design guidance for metal-gate/high-k/SiO 2 /Si stacked MOSFETs.展开更多
基金supported by the Tianjin Natural Science Foundation(08JCYBJC02200)the Keygrant Project of Chinese Ministry of Education(309009)the Natural Science Foundation of China(11171164)
文摘In order to solve the problems of local maximum modulus extraction and threshold selection in the edge detection of finite resolution digital images, a new wavelet transform based adaptive dual threshold edge detection algorithm is proposed. The local maximum modulus is extracted by linear interpolation in wavelet domain. With the analysis on histogram, the image is filtered with an adaptive dual threshold method, which effectively detects the contours of small structures as well as the boundaries of large objects. A wavelet domain's propagation function is used to further select weak edges. Experimental results have shown the self adaptivity of the threshold to images having the same kind of histogram, and the efficiency even in noise tampered images.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60936005 and 61076097)the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China (Grant No. 708083)the Fundamental Research Funds for the Central Universities (Grant No. 20110203110012)
文摘In this paper the influences of the metal-gate and high-k/SiO 2 /Si stacked structure on the metal-oxide-semiconductor field-effect transistor（MOSFET） are investigated.The flat-band voltage is revised by considering the influences of stacked structure and metal-semiconductor work function fluctuation.The two-dimensional Poisson＇s equation of potential distribution is presented.A threshold voltage analytical model for metal-gate/high-k/SiO 2 /Si stacked MOSFETs is developed by solving these Poisson＇s equations using the boundary conditions.The model is verified by a two-dimensional device simulator,which provides the basic design guidance for metal-gate/high-k/SiO 2 /Si stacked MOSFETs.
