Doping concentration and thickness of an epitaxy layer are the most essential parameters for power devices.The conventional algorithm extracts these two parameters by calculating the doping profile from its capacitanc...Doping concentration and thickness of an epitaxy layer are the most essential parameters for power devices.The conventional algorithm extracts these two parameters by calculating the doping profile from its capacitance-voltage(C-V)characteristics.Such an algorithm treats the device as a parallel-plane junction and ignores the influence of the terminations.The epitaxy layer doping concentration tends to be overestimated and the thickness underestimated.In order to obtain the epitaxy layer parameters with higher accuracy,a new algorithm applicable for devices with field limited ring(FLR)terminations is proposed in this paper.This new algorithm is also based on the C-V characteristics and considers the extension manner of the depletion region under the FLR termination.Such an extension manner depends on the design parameters of the FLR termination and is studied in detail by simulation and modeling.The analytical expressions of the device C-V characteristics and the effective doping profile are derived.More accurate epitaxy layer parameters can be extracted by fitting the effective doping profile expression to the C-V doping profile calculated from the C-V characteristics.The relationship between the horizontal extension width and the vertical depth of the depletion region is also acquired.The credibility of the new algorithm is verified by experiments.The applicability of our new algorithm to FLR/field plate combining terminations is also discussed.Our new algorithm acts as a powerful tool for analyses and improvements of power devices.展开更多
器件的负偏压温度不稳定性(Negative bias temperature instability,NBTI)退化依赖于栅氧化层中电场的大小和强反型时沟道空穴浓度,沟道掺杂浓度的不同显然会引起栅氧化层电场的变化。栅氧化层的厚度不仅影响栅氧化层电场,而且会影响沟...器件的负偏压温度不稳定性(Negative bias temperature instability,NBTI)退化依赖于栅氧化层中电场的大小和强反型时沟道空穴浓度,沟道掺杂浓度的不同显然会引起栅氧化层电场的变化。栅氧化层的厚度不仅影响栅氧化层电场,而且会影响沟道空穴浓度,因而,改变沟道掺杂浓度和栅氧化层厚度会引起NBTI退化的不同。首先利用pMOSFETS器件的能带图和NBTI的退化模型,推导出了器件NBTI随器件参数变化的公式,并修订了NBTI的数值模拟方法,然后分别利用理论计算和数值模拟的方法对不同器件参数、相同阈值电压的器件进行定量地计算和仿真,继而总结出一种分析器件NBTI退化的应用模型,可对集成电路和器件的可靠性设计提供指导。展开更多
通过计算Al Ga N/Ga N HEMT二维电子气中的电势、载流子以及调制掺杂载流子寿命,得到Al Ga N/Ga N HEMT电容和充电时间,研究了Al Ga N掺杂层浓度和厚度对器件的时间响应,并分析了Al Ga N/Ga N HEMT器件的高频特性。结果表明,栅电容随着A...通过计算Al Ga N/Ga N HEMT二维电子气中的电势、载流子以及调制掺杂载流子寿命,得到Al Ga N/Ga N HEMT电容和充电时间,研究了Al Ga N掺杂层浓度和厚度对器件的时间响应,并分析了Al Ga N/Ga N HEMT器件的高频特性。结果表明,栅电容随着Al Ga N掺杂层浓度和厚度的增加逐渐减小。随着Al Ga N层掺杂浓度的增大,电容充电时间先减后增,当掺杂浓度达到1.24×1019cm-3时,电容充电时间达到极小值,在Al Ga N掺杂层厚度等于7 nm时电容充电时间最短。展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2018YFB0104701)。
文摘Doping concentration and thickness of an epitaxy layer are the most essential parameters for power devices.The conventional algorithm extracts these two parameters by calculating the doping profile from its capacitance-voltage(C-V)characteristics.Such an algorithm treats the device as a parallel-plane junction and ignores the influence of the terminations.The epitaxy layer doping concentration tends to be overestimated and the thickness underestimated.In order to obtain the epitaxy layer parameters with higher accuracy,a new algorithm applicable for devices with field limited ring(FLR)terminations is proposed in this paper.This new algorithm is also based on the C-V characteristics and considers the extension manner of the depletion region under the FLR termination.Such an extension manner depends on the design parameters of the FLR termination and is studied in detail by simulation and modeling.The analytical expressions of the device C-V characteristics and the effective doping profile are derived.More accurate epitaxy layer parameters can be extracted by fitting the effective doping profile expression to the C-V doping profile calculated from the C-V characteristics.The relationship between the horizontal extension width and the vertical depth of the depletion region is also acquired.The credibility of the new algorithm is verified by experiments.The applicability of our new algorithm to FLR/field plate combining terminations is also discussed.Our new algorithm acts as a powerful tool for analyses and improvements of power devices.
文摘器件的负偏压温度不稳定性(Negative bias temperature instability,NBTI)退化依赖于栅氧化层中电场的大小和强反型时沟道空穴浓度,沟道掺杂浓度的不同显然会引起栅氧化层电场的变化。栅氧化层的厚度不仅影响栅氧化层电场,而且会影响沟道空穴浓度,因而,改变沟道掺杂浓度和栅氧化层厚度会引起NBTI退化的不同。首先利用pMOSFETS器件的能带图和NBTI的退化模型,推导出了器件NBTI随器件参数变化的公式,并修订了NBTI的数值模拟方法,然后分别利用理论计算和数值模拟的方法对不同器件参数、相同阈值电压的器件进行定量地计算和仿真,继而总结出一种分析器件NBTI退化的应用模型,可对集成电路和器件的可靠性设计提供指导。
文摘通过计算Al Ga N/Ga N HEMT二维电子气中的电势、载流子以及调制掺杂载流子寿命,得到Al Ga N/Ga N HEMT电容和充电时间,研究了Al Ga N掺杂层浓度和厚度对器件的时间响应,并分析了Al Ga N/Ga N HEMT器件的高频特性。结果表明,栅电容随着Al Ga N掺杂层浓度和厚度的增加逐渐减小。随着Al Ga N层掺杂浓度的增大,电容充电时间先减后增,当掺杂浓度达到1.24×1019cm-3时,电容充电时间达到极小值,在Al Ga N掺杂层厚度等于7 nm时电容充电时间最短。
